component
DMP2035UVTQ-7
Public Made by Adomby adom
Diodes Incorporated MOSFETs, TSOT-26. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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Contents
README
markdownDMP2035UVTQ-7
Diodes Incorporated · MOSFETs · TSOT-26
DMP2035UVTQ-7 from Diodes Incorporated, in a TSOT-26. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | D | passive | Drain, connected internally to the other drain pins (2, 5, 6); drain-source breakdown voltage is -20V. |
| 2 | D | passive | Drain, connected internally to the other drain pins (1, 5, 6); continuous drain current is -6.0A at VGS = -4.5V, TA = +25°C (Note 7). |
| 3 | G | input | Gate with integrated protection diode (ESD protected up to 3kV); maximum gate-source voltage is ±12V. |
| 4 | S | passive | Source; maximum continuous body diode forward current is -2.0A. |
| 5 | D | passive | Drain, connected internally to the other drain pins (1, 2, 6); pulsed drain current is -24A (10µs pulse, 1% duty). |
| 6 | D | passive | Drain, connected internally to the other drain pins (1, 2, 5); RDS(on) is 35mΩ max at VGS = -4.5V. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Diodes Incorporated |
| Package | TSOT-26 |
| Category | Triode/MOS Tube/Transistor |
| Pins | 6 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDSS | -20 | V | TA = 25°C | 2 | ||
| Gate-Source Voltage | VGSS | -12 | 12 | V | TA = 25°C | 2 | |
| Continuous Drain Current, VGS=-4.5V, steady state | ID | -6 | A | TA = +25°C, Note 7 | 2 | ||
| Continuous Drain Current, VGS=-4.5V, steady state | ID | -4.8 | A | TA = +70°C, Note 7 | 2 | ||
| Continuous Drain Current, VGS=-4.5V, t<10s | ID | -7.2 | A | TA = +25°C, Note 7 | 2 | ||
| Continuous Drain Current, VGS=-4.5V, t<10s | ID | -5.7 | A | TA = +70°C, Note 7 | 2 | ||
| Continuous Drain Current, VGS=-2.5V, steady state | ID | -5.2 | A | TA = +25°C, Note 7 | 2 | ||
| Continuous Drain Current, VGS=-2.5V, steady state | ID | -4.1 | A | TA = +70°C, Note 7 | 2 | ||
| Continuous Drain Current, VGS=-2.5V, t<10s | ID | -6.2 | A | TA = +25°C, Note 7 | 2 | ||
| Continuous Drain Current, VGS=-2.5V, t<10s | ID | -4.9 | A | TA = +70°C, Note 7 | 2 | ||
| Maximum Continuous Body Diode Forward Current | IS | -2 | A | Note 7 | 2 | ||
| Pulsed Drain Current | IDM | -24 | A | 10µs pulse, duty cycle = 1% | 2 | ||
| Total Power Dissipation (Note 6) | PD | 1.2 | W | TA = 25°C, Note 6 | 2 | ||
| Thermal Resistance, Junction to Ambient, steady state (Note 6) | RθJA | 106 | °C/W | Steady State, Note 6 | 2 | ||
| Thermal Resistance, Junction to Ambient, t<10s (Note 6) | RθJA | 74 | °C/W | t<10s, Note 6 | 2 | ||
| Total Power Dissipation (Note 7) | PD | 2 | W | TA = 25°C, Note 7 | 2 | ||
| Thermal Resistance, Junction to Ambient, steady state (Note 7) | RθJA | 65 | °C/W | Steady State, Note 7 | 2 | ||
| Thermal Resistance, Junction to Ambient, t<10s (Note 7) | RθJA | 46 | °C/W | t<10s, Note 7 | 2 | ||
| Thermal Resistance, Junction to Case | RθJC | 11.8 | °C/W | Steady State, Note 7 | 2 | ||
| Operating and Storage Temperature Range | TJ, TSTG | -55 | 150 | °C | 2 | ||
| Drain-Source Breakdown Voltage | BVDSS | -20 | V | VGS = 0V, ID = -250µA | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | -1 | µA | VDS = -20V, VGS = 0V | 2 | ||
| Gate-Source Leakage | IGSS | 10 | µA | VGS = 8V, VDS = 0V | 2 | ||
| Gate Threshold Voltage | VGS(th) | -0.4 | -0.7 | -1.5 | V | VDS = VGS, ID = -250µA | 2 |
| Gate Threshold Voltage Temperature Coefficient | △VGS(th)/△TJ | 2.5 | mV/°C | ID = -250µA, Referenced to +25°C | 2 | ||
| Static Drain-Source On-Resistance | RDS(ON) | 23 | 35 | mΩ | VGS = -4.5V, ID = -4.0A | 2 | |
| Static Drain-Source On-Resistance | RDS(ON) | 30 | 45 | mΩ | VGS = -2.5V, ID = -4.0A | 2 | |
| Static Drain-Source On-Resistance | RDS(ON) | 41 | 62 | mΩ | VGS = -1.8V, ID = -2.0A | 2 | |
| Diode Forward Voltage | VSD | -0.7 | -1 | V | VGS = 0V, IS = -1A | 2 | |
| Input Capacitance | Ciss | 1610 | 2400 | pF | VDS = -10V, VGS = 0V, f = 1.0MHz | 2 | |
| Output Capacitance | Coss | 157 | 210 | pF | VDS = -10V, VGS = 0V, f = 1.0MHz | 2 | |
| Reverse Transfer Capacitance | Crss | 145 | 200 | pF | VDS = -10V, VGS = 0V, f = 1.0MHz | 2 | |
| Gate Resistance | RG | 9.4 | 14.1 | Ω | VDS = 0V, VGS = 0V, f = 1.0MHz | 2 | |
| Total Gate Charge | Qg | 15.4 | 23.1 | nC | VDS = -10V, VGS = -4.5V, ID = -4A | 2 | |
| Turn-On Delay Time | tD(on) | 17 | 33 | ns | VGS = -4.5V, VDS = -10V, RG = 6Ω, ID = -1A, RL = 10Ω | 2 | |
| Turn-On Rise Time | tr | 12 | 19 | ns | VGS = -4.5V, VDS = -10V, RG = 6Ω, ID = -1A, RL = 10Ω | 2 | |
| Turn-Off Delay Time | tD(off) | 94 | 150 | ns | VGS = -4.5V, VDS = -10V, RG = 6Ω, ID = -1A, RL = 10Ω | 2 | |
| Turn-Off Fall Time | tf | 42 | 64 | ns | VGS = -4.5V, VDS = -10V, RG = 6Ω, ID = -1A, RL = 10Ω | 2 | |
| Reverse Recovery Time | trr | 14 | 25 | ns | IF =-4.5A, di/dt=100A/µS | 2 | |
| Reverse Recovery Charge | Qrr | 4 | 8 | nC | IF =-4.5A, di/dt=100A/µS | 2 | |
| Forward Transfer Admittance | /Yfs/ | 18 | S | VDS = -5V, ID = -5.5A | 2 | ||
| Gate-Source Charge | Qgs | 2.5 | nC | VDS = -10V, VGS = -4.5V, ID = -4A | 2 | ||
| Gate-Drain Charge | Qgd | 3.3 | nC | VDS = -10V, VGS = -4.5V, ID = -4A | 2 |
Materials and finish
As the datasheet states them (page.json metadata.appearance; the 3D model's colours follow it).
| Part | Material | Colour / plating | Datasheet says | Page |
|---|---|---|---|---|
| contacts | Copper | tin | Terminal Connections: See Diagram Terminals: Finish, Matte Tin Annealed over Copper Leadframe. | 1 |
CAD (KiCad official)
- Symbol:
DMP2035UVTQ-7 - Footprint:
Package_TO_SOT_SMD:TSOT-23-6 - 3D model: TSOT-26 (KiCad packages3D, STEP)
- 3D model files:
dmp2035uvtq-7-etched.step/dmp2035uvtq-7-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);dmp2035uvtq-7.step/dmp2035uvtq-7.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Diodes Incorporated datasheet (6 pp, sha256
aefb2feab533679c, retrieved 2026-10-22, tier: manufacturer) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).