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HSP0016

Public Made by Adom

by adom

HUASHUO MOSFETs, TO-220. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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3D Model

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Symbol & Footprint

Schematic Symbol

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Datasheet

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Contents

README

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HSP0016

HUASHUO · MOSFETs · TO-220

HSP0016 from HUASHUO, in a TO-220. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate; Gate-Source voltage limited to ±20 V, with a typical threshold VGS(th) of 1.7 V (1.0 to 2.5 V) at ID=250uA.
2 D passive Drain (also connected to the mounting tab); Drain-Source voltage 100 V max, continuous drain current 27 A at TC=25℃ and pulsed 54 A.
3 S passive Source; carries the 27 A continuous current at TC=25℃ and is the reference for the body diode (IS 27 A max).

Key specifications

Parameter Value
Manufacturer HUASHUO
Package TO-220
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDS 100 V 1
Gate-Source Voltage VGS -20 20 V 1
Continuous Drain Current ID@TC=25℃ 27 A VGS @ 10V 1
Continuous Drain Current ID@TC=100℃ 17 A VGS @ 10V 1
Continuous Drain Current ID@TA=25℃ 4.2 A VGS @ 10V 1
Continuous Drain Current ID@TA=70℃ 3.3 A VGS @ 10V 1
Pulsed Drain Current IDM 54 A 1
Single Pulse Avalanche Energy EAS 36.5 mJ VDD=25V, VGS=10V, L=0.1mH, IAS=27A 1
Avalanche Current IAS 27 A 1
Total Power Dissipation PD@TC=25℃ 87 W TC=25℃ 1
Total Power Dissipation PD@TA=25℃ 2 W TA=25℃ 1
Storage Temperature Range TSTG -55 150 ℃ 1
Operating Junction Temperature Range TJ -55 150 ℃ 1
Thermal Resistance Junction-ambient RθJA 62 ℃/W Note 1: surface mounted on 1 inch² FR-4 board, 2OZ copper 1
Thermal Resistance Junction-Case RθJC 1.44 ℃/W Note 1 1
Drain-Source Breakdown Voltage BVDSS 100 V VGS=0V, ID=250uA 2
Static Drain-Source On-Resistance RDS(ON) 47 mΩ VGS=10V, ID=20A 2
Static Drain-Source On-Resistance RDS(ON) 50 mΩ VGS=4.5V, ID=15A 2
Gate Threshold Voltage VGS(th) 1 1.7 2.5 V VGS=VDS, ID=250uA 2
Drain-Source Leakage Current IDSS 10 uA VDS=80V, VGS=0V, TJ=25℃ 2
Drain-Source Leakage Current IDSS 100 uA VDS=80V, VGS=0V, TJ=55℃ 2
Gate-Source Leakage Current IGSS -100 100 nA VGS=±20V, VDS=0V 2
Continuous Source Current IS 27 A VG=VD=0V, Force Current 2
Pulsed Source Current ISM 54 A 2
Diode Forward Voltage VSD 1.2 V VGS=0V, IS=1A, TJ=25℃ 2

CAD (KiCad official)

  • Symbol: HSP0016
  • Footprint: Package_TO_SOT_THT:TO-220-3_Vertical
  • 3D model: TO-220 (KiCad packages3D, STEP)
  • 3D model files: hsp0016-etched.step / hsp0016-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); hsp0016.step / hsp0016.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: HUASHUO datasheet (6 pp, sha256 d6509aaea2ca347f, retrieved 2026-10-20, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF