component
DMN3030LSS-13
Public Made by Adomby adom
Diodes Incorporated MOSFETs, SO-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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Contents
README
markdownDMN3030LSS-13
Diodes Incorporated · MOSFETs · SO-8
DMN3030LSS-13 from Diodes Incorporated, in a SO-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S | passive | Source of the N-channel MOSFET, shown on the top-view internal schematic at pin 1 and tied to the other source pins. |
| 2 | S | passive | Source of the N-channel MOSFET, shown on the top-view internal schematic at pin 2 and tied to the other source pins. |
| 3 | S | passive | Source of the N-channel MOSFET, shown on the top-view internal schematic at pin 3 and tied to the other source pins. |
| 4 | G | input | Gate of the N-channel MOSFET, with a threshold VGS(th) of 1 V min to 2.1 V max at ID = 250 µA and a VGSS rating of 25 V. |
| 5 | D | passive | Drain of the N-channel MOSFET, rated 30 V VDSS and tied to the other drain pins. |
| 6 | D | passive | Drain of the N-channel MOSFET, rated 30 V VDSS and tied to the other drain pins. |
| 7 | D | passive | Drain of the N-channel MOSFET, rated 30 V VDSS and tied to the other drain pins. |
| 8 | D | passive | Drain of the N-channel MOSFET, rated 30 V VDSS and tied to the other drain pins. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Diodes Incorporated |
| Package | SO-8 |
| Category | Triode/MOS Tube/Transistor |
| Pins | 8 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDSS | 30 | V | TA = +25°C | 2 | ||
| Gate-Source Voltage | VGSS | 25 | V | TA = +25°C | 2 | ||
| Drain Current, steady state | ID | 9 | A | TA = +25°C, Note 6 | 2 | ||
| Drain Current, steady state | ID | 6.75 | A | TA = +70°C, Note 6 | 2 | ||
| Pulsed Drain Current | IDM | 40 | A | 10µs Pulse, Duty Cycle = 1% | 2 | ||
| Total Power Dissipation | PD | 1.7 | W | Note 5 | 2 | ||
| Total Power Dissipation | PD | 2.5 | W | Note 6 | 2 | ||
| Thermal Resistance, Junction to Ambient | RθJA | 73 | °C/W | Note 5 | 2 | ||
| Thermal Resistance, Junction to Ambient | RθJA | 50 | °C/W | Note 6 | 2 | ||
| Operating and Storage Temperature Range | TJ, TSTG | -55 | 150 | °C | 2 | ||
| Drain-Source Breakdown Voltage | BVDSS | 30 | V | VGS = 0V, ID = 250μA | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | 1 | μA | VDS = 30V, VGS = 0V | 2 | ||
| Gate-Source Leakage | IGSS | 100 | nA | VGS = 20V, VDS = 0V | 2 | ||
| Gate-Source Leakage | IGSS | 1 | μA | VGS = 25V, VDS = 0V | 2 | ||
| Gate Threshold Voltage | VGS(th) | 1 | 2.1 | V | VDS = VGS, ID = 250μA | 2 | |
| Static Drain-Source On-Resistance | RDS(ON) | 15.7 | 18 | mΩ | VGS = 10V, ID = 9A | 2 | |
| Static Drain-Source On-Resistance | RDS(ON) | 26.4 | 30 | mΩ | VGS = 4.5V, ID = 7A | 2 | |
| Diode Forward Voltage | VSD | 0.5 | 0.7 | 1.2 | V | VGS = 0V, IS = 2.1A | 2 |
| Gate Resistance | RG | 0.3 | 0.88 | 2.5 | Ω | VDS = 0V, VGS = 0V, f = 1.0MHz | 2 |
| Total Gate Charge | Qg | 7.6 | 12 | nC | VDS = 15V, VGS = 4.5V, ID = 9A | 2 | |
| Total Gate Charge | Qg | 16.7 | 25 | nC | VDS = 15V, VGS = 10V, ID = 9A | 2 | |
| Forward Transconductance | gfs | 5.8 | S | VDS = 10V, ID = 9A | 2 | ||
| Input Capacitance | Ciss | 741 | pF | VDS = 15V, VGS = 0V, f = 1.0MHz | 2 | ||
| Output Capacitance | Coss | 124 | pF | VDS = 15V, VGS = 0V, f = 1.0MHz | 2 | ||
| Reverse Transfer Capacitance | Crss | 95 | pF | VDS = 15V, VGS = 0V, f = 1.0MHz | 2 | ||
| Gate-Source Charge | Qgs | 1.9 | nC | VDS = 15V, VGS = 10V, ID = 9A | 2 | ||
| Gate-Drain Charge | Qgd | 5.2 | nC | VDS = 15V, VGS = 10V, ID = 9A | 2 | ||
| Turn-On Delay Time | td(on) | 4 | ns | VGS = 10V, VDS = 15V, RL = 15Ω, RG = 6Ω | 2 | ||
| Rise Time | tr | 4.4 | ns | VGS = 10V, VDS = 15V, RL = 15Ω, RG = 6Ω | 2 | ||
| Turn-Off Delay Time | td(off) | 23 | ns | VGS = 10V, VDS = 15V, RL = 15Ω, RG = 6Ω | 2 | ||
| Fall Time | tf | 9.4 | ns | VGS = 10V, VDS = 15V, RL = 15Ω, RG = 6Ω | 2 |
Materials and finish
As the datasheet states them (page.json metadata.appearance; the 3D model's colours follow it).
| Part | Material | Colour / plating | Datasheet says | Page |
|---|---|---|---|---|
| contacts | Copper | tin | Terminals Connections: See Diagram Terminals: Finish, Matte Tin Annealed over Copper Leadframe. | 1 |
CAD (KiCad official)
- Symbol:
DMN3030LSS-13 - Footprint:
Package_SO:SOIC-8_3.9x4.9mm_P1.27mm - 3D model: SO-8 (KiCad packages3D, STEP)
- 3D model files:
dmn3030lss-13-etched.step/dmn3030lss-13-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);dmn3030lss-13.step/dmn3030lss-13.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Diodes Incorporated datasheet (6 pp, sha256
49e8736418d8a13c, retrieved 2026-10-22, tier: manufacturer) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).