component
WGD65R550L
Public Made by Adomby adom
Wild Goose MOSFETs, TO-252. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownWGD65R550L
Wild Goose · MOSFETs · TO-252
WGD65R550L from Wild Goose, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate terminal of the 650V N-channel MOSFET; the datasheet limits gate-source voltage VGS to ±30 V. |
| 2 | D | passive | Drain terminal of the MOSFET; the datasheet rates drain-source voltage VDS at 650 V and continuous drain current ID at 7.0 A (TC=25°C). |
| 3 | S | passive | Source terminal of the MOSFET; the datasheet rates continuous source current IS at 7.0 A and pulsed source current ISM at 28 A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Wild Goose |
| Package | TO-252 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-source voltage | VDS | 650 | V | 1 | |||
| Gate-source voltage | VGS | -30 | 30 | V | 1 | ||
| Drain current (continuous) | ID | 7 | A | TC=25°C | 1 | ||
| Drain current (continuous) | ID | 4.4 | A | TC=100°C | 1 | ||
| Pulsed drain current | IDM | 28 | A | 1 | |||
| Power dissipation | PD | 60 | W | TC=25°C | 1 | ||
| Single pulse avalanche energy | EAS | 261 | mJ | 1 | |||
| Body diode dv/dt | dv/dt | 15 | V/ns | 1 | |||
| MOSFET dv/dt ruggedness | dv/dt | 50 | V/ns | 1 | |||
| Operating junction temperature range | TJ | -55 | 150 | °C | 1 | ||
| Storage temperature range | Tstg | -55 | 150 | °C | 1 | ||
| Drain-source breakdown voltage | BVDSS | 650 | V | VGS=0V, ID=250µA | 2 | ||
| Drain-source leakage current | IDSS | 1 | µA | VDS=650V, VGS=0V | 2 | ||
| Gate-source leakage current | IGSS | -100 | 100 | nA | VGS=±30V, VDS=0V | 2 | |
| Gate threshold voltage | VGS(th) | 2 | 4 | V | VGS=VDS, ID=250µA | 2 | |
| Static drain-source on-resistance | RDS(on) | 0.55 | 0.64 | Ω | VGS=10V, ID=3.5A | 2 | |
| Continuous source current | IS | 7 | A | 2 | |||
| Pulsed source current | ISM | 28 | A | 2 | |||
| Diode forward voltage | VSD | 1.4 | V | IS=7.0A, VGS=0V | 2 | ||
| Thermal resistance, junction to case | RθJC | 2.08 | °C/W | 1 | |||
| Thermal resistance, junction to ambient | RθJA | 62 | °C/W | 1 |
CAD (KiCad official)
- Symbol:
WGD65R550L - Footprint:
Package_TO_SOT_SMD:TO-252-2 - 3D model: TO-252 (KiCad packages3D, STEP)
- 3D model files:
wgd65r550l-etched.step/wgd65r550l-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);wgd65r550l.step/wgd65r550l.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Wild Goose datasheet (6 pp, sha256
6a75ca038df426ef, retrieved 2026-10-18, tier: lcsc) - Datasheet language: Chinese. Pin names, descriptions, and specs on this page were extracted and translated to English by ds2sf; the linked PDF is the manufacturer original.
- Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).