component
IRFB4410ZPBF-HXY
Public Made by Adomby adom
HXY MOSFET MOSFETs, TO-220. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownIRFB4410ZPBF-HXY
HXY MOSFET · MOSFETs · TO-220
IRFB4410ZPBF-HXY from HXY MOSFET, in a TO-220. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate terminal; the gate-source voltage VGS is rated ±20 V. |
| 2 | D | passive | Drain terminal; the drain-source voltage VDS is rated 100 V, with continuous drain current ID of 70 A at TC=25°C. |
| 3 | S | passive | Source terminal; the continuous source current IS is rated 70 A and the pulsed source current ISM is rated 280 A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | HXY MOSFET |
| Package | TO-220 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Gate-Source Voltage | VGS | -20 | 20 | V | 1 | ||
| Gate-Source Leakage Current | IGSS | -100 | 100 | nA | VGS=±20V, VDS=0V | 2 | |
| Drain-Source Breakdown Voltage | BVDSS | 100 | V | VGS=0V, ID=250uA | 2 | ||
| Gate Threshold Voltage | VGS(th) | 1 | 2.5 | V | VGS=VDS, ID=250uA | 2 | |
| Static Drain-Source On-Resistance | RDS(ON) | 8.5 | 10.5 | mΩ | VGS=10V, ID=20A | 2 | |
| Static Drain-Source On-Resistance | RDS(ON) | 9.5 | 15 | mΩ | VGS=4.5V, ID=15A | 2 | |
| Drain-Source Leakage Current | IDSS | 1 | uA | VDS=80V, VGS=0V, TJ=25℃ | 2 | ||
| Drain-Source Leakage Current | IDSS | 5 | uA | VDS=80V, VGS=0V, TJ=55℃ | 2 | ||
| Continuous Source Current | IS | 70 | A | VG=VD=0V, Force Current | 2 | ||
| Pulsed Source Current | ISM | 280 | A | 2 | |||
| Diode Forward Voltage | VSD | 1.2 | V | VGS=0V, IS=1A, TJ=25℃ | 2 | ||
| Continuous Drain Current | ID | 70 | A | TC=25°C | 1 | ||
| Pulsed Drain Current | IDM | 280 | A | 1 | |||
| Drain-Source Voltage | VDS | 100 | V | 1 | |||
| Single Pulse Avalanche Energy | EAS | 110 | mJ | 1 | |||
| Total Power Dissipation | PD | 100 | W | TC=25°C | 1 | ||
| Storage Temperature Range | TSTG | -55 | 150 | ℃ | 1 | ||
| Operating Junction Temperature Range | TJ | -55 | 150 | ℃ | 1 | ||
| Thermal Resistance Junction-Ambient | RθJA | 64 | ℃/W | 1 | |||
| Thermal Resistance Junction-Ambient (printed label for RθJC) | RθJC | 1.25 | ℃/W | 1 |
CAD (KiCad official)
- Symbol:
IRFB4410ZPBF-HXY - Footprint:
Package_TO_SOT_THT:TO-220-3_Vertical - 3D model: TO-220 (KiCad packages3D, STEP)
- 3D model files:
irfb4410zpbf-hxy-etched.step/irfb4410zpbf-hxy-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);irfb4410zpbf-hxy.step/irfb4410zpbf-hxy.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: HXY MOSFET datasheet (7 pp, sha256
3f179d078854ef9e, retrieved 2026-10-21, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).