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IRF7413TRPBF-HXY
Public Made by Adomby adom
HXY MOSFET MOSFETs, SOP-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownIRF7413TRPBF-HXY
HXY MOSFET · MOSFETs · SOP-8
IRF7413TRPBF-HXY from HXY MOSFET, in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S | passive | Source of the N-channel MOSFET, tied to the other source pins (2, 3). |
| 2 | S | passive | Source of the N-channel MOSFET, tied to the other source pins (1, 3). |
| 3 | S | passive | Source of the N-channel MOSFET, tied to the other source pins (1, 2). |
| 4 | G | input | Gate of the N-channel MOSFET, with a maximum gate-source voltage of ±20 V and drive down to 4.5 V. |
| 5 | D | passive | Drain of the N-channel MOSFET, tied to the other drain pins (6, 7, 8), rated at 30 V VDS. |
| 6 | D | passive | Drain of the N-channel MOSFET, tied to the other drain pins (5, 7, 8), rated at 30 V VDS. |
| 7 | D | passive | Drain of the N-channel MOSFET, tied to the other drain pins (5, 6, 8), rated at 30 V VDS. |
| 8 | D | passive | Drain of the N-channel MOSFET, tied to the other drain pins (5, 6, 7), rated at 30 V VDS. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | HXY MOSFET |
| Package | SOP-8 |
| Category | Triode/MOS Tube/Transistor |
| Pins | 8 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | BVDSS | 30 | V | VGS=0V, ID=250uA | 2 | ||
| Static Drain-Source On-Resistance | RDS(ON) | 14.5 | 18 | mΩ | VGS=10V, ID=7A | 2 | |
| Static Drain-Source On-Resistance | RDS(ON) | 20 | 26 | mΩ | VGS=4.5V, ID=4A | 2 | |
| Gate Threshold Voltage | VGS(th) | 1.2 | 1.5 | 2.5 | V | VGS=VDS, ID=250uA | 2 |
| Drain-Source Leakage Current | IDSS | 1 | uA | VDS=24V, VGS=0V, TJ=25℃ | 2 | ||
| Drain-Source Leakage Current | IDSS | 5 | uA | VDS=24V, VGS=0V, TJ=55℃ | 2 | ||
| Gate-Source Leakage Current | IGSS | -100 | 100 | nA | VGS=±20V, VDS=0V | 2 | |
| Gate Resistance | Rg | 1.04 | 2.1 | VDS=0V, VGS=0V, f=1MHz | 2 | ||
| Total Gate Charge (4.5V) | Qg | 6 | 8.4 | nC | VDS=15V, VGS=4.5V, ID=7A | 2 | |
| Gate-Source Charge | Qgs | 2.2 | 3.1 | nC | VDS=15V, VGS=4.5V, ID=7A | 2 | |
| Gate-Drain Charge | Qgd | 2 | 2.8 | nC | VDS=15V, VGS=4.5V, ID=7A | 2 | |
| Turn-On Delay Time | Td(on) | 1.2 | 2.4 | ns | VDD=15V, VGS=10V, RG=3.3, ID=7A | 2 | |
| Rise Time | Tr | 40 | 72 | ns | VDD=15V, VGS=10V, RG=3.3, ID=7A | 2 | |
| Turn-Off Delay Time | Td(off) | 18 | 36 | ns | VDD=15V, VGS=10V, RG=3.3, ID=7A | 2 | |
| Fall Time | Tf | 7.2 | 14.4 | ns | VDD=15V, VGS=10V, RG=3.3, ID=7A | 2 | |
| Input Capacitance | Ciss | 583 | 816.2 | pF | VDS=15V, VGS=0V, f=1MHz | 2 | |
| Output Capacitance | Coss | 77 | 107.8 | pF | VDS=15V, VGS=0V, f=1MHz | 2 | |
| Reverse Transfer Capacitance | Crss | 59 | 82.6 | pF | VDS=15V, VGS=0V, f=1MHz | 2 | |
| Continuous Source Current | IS | 7 | A | VG=VD=0V, Force Current | 2 | ||
| Pulsed Source Current | ISM | 35 | A | 2 | |||
| Diode Forward Voltage | VSD | 1.2 | V | VGS=0V, IS=1A, TJ=25℃ | 2 | ||
| Drain-Source Voltage | VDS | 30 | V | 1 | |||
| Gate-Source Voltage | VGS | -20 | 20 | V | 1 | ||
| Continuous Drain Current | ID@TA=25℃ | 8.5 | A | TA=25℃ | 1 | ||
| Continuous Drain Current | ID@TA=70℃ | 5.6 | A | TA=70℃ | 1 | ||
| Pulsed Drain Current | IDM | 35 | A | 1 | |||
| Single Pulse Avalanche Energy | EAS | 20 | mJ | Single pulse; note 3: VDD=25V, VGS=10V, L=0.1mH, IAS=20A | 1 | ||
| Avalanche Current | IAS | 20 | A | 1 | |||
| Total Power Dissipation | PD@TA=25℃ | 1.5 | W | TA=25℃; note 4: limited by 150℃ junction temperature | 1 | ||
| Storage Temperature Range | TSTG | -55 | 150 | ℃ | 1 | ||
| Operating Junction Temperature Range | TJ | -55 | 150 | ℃ | 1 | ||
| Thermal Resistance Junction-ambient | RθJA | 85 | ℃/W | t≤10s; surface mounted on 1 inch² FR-4 board, 2OZ copper (note 1) | 1 | ||
| Thermal Resistance Junction-ambient | RθJA | 25 | ℃/W | Steady state not printed; note 1: surface mounted on 1 inch² FR-4 board, 2OZ copper | 1 |
CAD (KiCad official)
- Symbol:
IRF7413TRPBF-HXY - Footprint:
Package_SO:SOIC-8_3.9x4.9mm_P1.27mm - 3D model: SOP-8 (KiCad packages3D, STEP)
- 3D model files:
irf7413trpbf-hxy-etched.step/irf7413trpbf-hxy-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);irf7413trpbf-hxy.step/irf7413trpbf-hxy.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: HXY MOSFET datasheet (6 pp, sha256
9668b14a8f784df0, retrieved 2026-10-30, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).