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NX3008NBKW-VB
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VBsemi Elec MOSFETs, SOT-323(SC-70). Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownNX3008NBKW-VB
VBsemi Elec · MOSFETs · SOT-323(SC-70)
NX3008NBKW-VB from VBsemi Elec, in a SOT-323(SC-70). Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate terminal; gate-source voltage limit is ±12 V with threshold of 0.6 to 1.3 V at ID = 250 µA. |
| 2 | S | passive | Source terminal; continuous source-drain body diode current is 2.3 A at TC = 25 °C. |
| 3 | D | passive | Drain terminal; drain-source voltage is 20 V maximum with continuous drain current of 4 A at TC = 25 °C. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | VBsemi Elec |
| Package | SOT-323(SC-70) |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | VDS | 20 | V | VGS = 0 V, ID = 250 µA | 2 | ||
| Gate-Source Threshold Voltage | VGS(th) | 0.6 | 1.3 | V | VDS = VGS, ID = 250 µA | 2 | |
| Gate-Source Leakage | IGSS | 0.5 | µA | VDS = 0 V, VGS = ± 4.5 V | 2 | ||
| Gate-Source Leakage | IGSS | 25 | µA | VDS = 0 V, VGS = ± 12 V | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | 1 | µA | VDS = 20 V, VGS = 0 V | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | 10 | µA | VDS = 20 V, VGS = 0 V, TJ = 55 °C | 2 | ||
| On-State Drain Current | ID(on) | 15 | A | VDS ≥ 5 V, VGS = 4.5 V | 2 | ||
| Drain-Source On-State Resistance | RDS(on) | 0.036 | Ω | VGS = 10 V, ID = 3.7 A | 2 | ||
| Drain-Source On-State Resistance | RDS(on) | 0.04 | Ω | VGS = 4.5 V, ID = 3.6 A | 2 | ||
| Drain-Source On-State Resistance | RDS(on) | 0.048 | Ω | VGS = 2.5 V, ID = 1.5 A | 2 | ||
| Forward Transconductance | gfs | 17 | S | VDS = 15 V, ID = 3.7 A | 2 | ||
| Total Gate Charge | Qg | 8.8 | 13.5 | nC | VDS = 15 V, VGS = 10 V, ID = 3.7 A | 2 | |
| Gate Resistance | Rg | 0.4 | 2 | 4 | Ω | f = 1 MHz | 2 |
| Turn-On Delay Time | td(on) | 0.29 | 0.58 | µs | VDD = 15 V, RL = 4.1 Ω, ID ≅ 3.7 A, VGEN = 4.5 V, Rg = 1 Ω | 2 | |
| Rise Time | tr | 0.4 | 0.8 | µs | VDD = 15 V, RL = 4.1 Ω, ID ≅ 3.7 A, VGEN = 4.5 V, Rg = 1 Ω | 2 | |
| Turn-Off Delay Time | td(off) | 1.9 | 3.8 | µs | VDD = 15 V, RL = 4.1 Ω, ID ≅ 3.7 A, VGEN = 4.5 V, Rg = 1 Ω | 2 | |
| Fall Time | tf | 0.75 | 1.5 | µs | VDD = 15 V, RL = 4.1 Ω, ID ≅ 3.7 A, VGEN = 4.5 V, Rg = 1 Ω | 2 | |
| Turn-On Delay Time | td(on) | 0.1 | 0.2 | µs | VDD = 15 V, RL = 4.1 Ω, ID ≅ 3.7 A, VGEN = 10 V, Rg = 1 Ω | 2 | |
| Rise Time | tr | 0.15 | 0.3 | µs | VDD = 15 V, RL = 4.1 Ω, ID ≅ 3.7 A, VGEN = 10 V, Rg = 1 Ω | 2 | |
| Continuous Source-Drain Diode Current | IS | 2.3 | A | TC = 25 °C | 2 | ||
| Pulse Diode Forward Current | ISM | 20 | A | 2 | |||
| Body Diode Voltage | VSD | 0.85 | 1.2 | V | IS = 3.7 A, VGS = 0 V | 2 | |
| Body Diode Reverse Recovery Time | trr | 25 | ns | IF = 3.7 A, dI/dt = 100 A/µs, TJ = 25 °C | 2 | ||
| Body Diode Reverse Recovery Charge | Qrr | 5 | 10 | nC | IF = 3.7 A, dI/dt = 100 A/µs, TJ = 25 °C | 2 | |
| Drain-Source Voltage | VDS | 20 | V | TA = 25 °C | 1 | ||
| Gate-Source Voltage | VGS | -12 | 12 | V | TA = 25 °C | 1 | |
| Continuous Drain Current | ID | 4 | A | TJ = 150 °C, TC = 25 °C | 1 | ||
| Continuous Drain Current | ID | 3.6 | A | TJ = 150 °C, TC = 70 °C | 1 | ||
| Pulsed Drain Current | IDM | 20 | A | t = 300 µs | 1 | ||
| Continuous Source-Drain Diode Current | IS | 2.3 | A | TC = 25 °C | 1 | ||
| Maximum Power Dissipation | PD | 2.8 | W | TC = 25 °C | 1 | ||
| Maximum Power Dissipation | PD | 1.8 | W | TC = 70 °C | 1 | ||
| Operating Junction and Storage Temperature Range | TJ, Tstg | -55 | 150 | °C | 1 | ||
| Junction-to-Ambient Thermal Resistance | RthJA | 60 | 80 | °C/W | t ≤ 5 s, surface mounted on 1" x 1" FR4 board | 1 | |
| Junction-to-Foot (Drain) Thermal Resistance | RthJF | 34 | 45 | °C/W | Steady State | 1 |
CAD (KiCad official)
- Symbol:
NX3008NBKW-VB - Footprint:
Package_TO_SOT_SMD:SOT-323_SC-70 - 3D model: SOT-323(SC-70) (KiCad packages3D, STEP)
- 3D model files:
nx3008nbkw-vb-etched.step/nx3008nbkw-vb-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);nx3008nbkw-vb.step/nx3008nbkw-vb.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: VBsemi Elec datasheet (9 pp, sha256
0b1a5099b2f42a86, retrieved 2026-10-27, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).