component
SE2101
Public Made by Adomby adom
SINO IC MOSFETs, SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownSE2101
SINO IC · MOSFETs · SOT-23
SE2101 from SINO IC, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate of the P-channel MOSFET; gate-source voltage limited to ±12 V, threshold VGS(th) -0.35 to -1 V at ID=-250µA. |
| 2 | S | passive | Source of the P-channel MOSFET; drain-source voltage rated -20 V. |
| 3 | D | passive | Drain of the P-channel MOSFET; continuous drain current -0.9 A, pulsed -3 A, RDS(ON) 280 mΩ typ at VGS=-4.5 V. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | SINO IC |
| Package | SOT-23 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | -20 | V | 1 | |||
| Gate-Source Voltage | VGS | -12 | 12 | V | 1 | ||
| Drain Current Continuous | ID | -0.9 | A | 1 | |||
| Drain Current Pulsed | ID | -3 | A | Pulsed | 1 | ||
| Total Power Dissipation | PD | 250 | mW | TA=25℃ | 1 | ||
| Operating Junction Temperature Range | TJ | -55 | 150 | ℃ | 1 | ||
| Drain-Source Breakdown Voltage | BVDSS | -20 | V | ID=250μA, VGS=0 V | 2 | ||
| Drain to Source Leakage Current | IDSS | -1 | μA | VDS= -16V, VGS=0V | 2 | ||
| Gate-Body Leakage Current | IGSS | 10 | μA | VGS= 12V | 2 | ||
| Gate Threshold Voltage | VGS(th) | -0.35 | -0.6 | -1 | V | VDS= VGS, ID=-250μA | 2 |
| Static Drain-Source On-Resistance | RDS(ON) | 280 | 300 | mΩ | VGS=-4.5V, ID=-1A | 2 | |
| Static Drain-Source On-Resistance | RDS(ON) | 370 | 400 | mΩ | VGS=-2.5V, ID=-0.5A | 2 | |
| Junction to Case Thermal Resistance | RθJC | 6.9 | 8 | ℃/W | 2 | ||
| Junction to Ambient Thermal Resistance | RθJA | 52 | 62.5 | ℃/W | t≦10s | 2 |
CAD (KiCad official)
- Symbol:
SE2101 - Footprint:
Package_TO_SOT_SMD:SOT-23 - 3D model: SOT-23 (KiCad packages3D, STEP)
- 3D model files:
se2101-etched.step/se2101-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);se2101.step/se2101.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: SINO IC datasheet (4 pp, sha256
cd40f1475990d1d7, retrieved 2026-10-18, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).