component
KBU810
Public Made by Adomby adom
MDD（Microdiode Electronics） Bridge Rectifiers, KBU. Pinout reviewed by a person against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownKBU810
MDD（Microdiode Electronics） · Bridge Rectifiers · KBU
KBU810 from MDD（Microdiode Electronics）, in a KBU. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | + | power_out | Positive DC output of the bridge rectifier; the diagram marks pin 1 with a plus sign. |
| 2 | AC1 | passive | AC input terminal marked with a ~ symbol; the datasheet rates VRMS at up to 700 V for KBU810. |
| 3 | AC2 | passive | Second AC input terminal marked with a ~ symbol; the datasheet rates VRMS at up to 700 V for KBU810. |
| 4 | - | power_in | Negative DC output of the bridge rectifier; the diagram marks pin 4 with a minus sign. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | MDD（Microdiode Electronics） |
| Package | KBU |
| Category | Diodes |
| Pins | 4 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Maximum repetitive peak reverse voltage | VRRM | 1000 | V | 1 | |||
| Maximum RMS voltage | VRMS | 700 | V | 1 | |||
| Maximum DC blocking voltage | VDC | 1000 | V | 1 | |||
| Maximum average forward output rectified current | I(AV) | 8 | A | at TA=50 ℃ | 1 | ||
| Peak forward surge current | IFSM | 300 | A | 8.3ms single half sine-wave superimposed on rated load (JEDEC Method) | 1 | ||
| Maximum instantaneous forward voltage drop per bridge element | VF | 1.1 | V | per bridge element at 8.0A | 1 | ||
| Maximum DC reverse current | IR | 10 | μA | TA=25°C at rated DC blocking voltage | 1 | ||
| Maximum DC reverse current | IR | 0.5 | mA | TA=125°C at rated DC blocking voltage | 1 | ||
| Typical Junction Capacitance (Note 1) | CJ | 200 | pF | 1 | |||
| Typical Thermal Resistance (Note 2) | RθJA | 2.7 | °C/W | 1 | |||
| Operating junction temperature range | TJ | -55 | 150 | °C | 1 | ||
| Storage temperature range | TSTG | -55 | 150 | °C | 1 |
CAD (KiCad official)
- Symbol:
KBU810 - Footprint:
Diode_THT:Diode_Bridge_Vishay_KBU - 3D model: KBU (KiCad packages3D, STEP)
- 3D model files:
kbu810-etched.step/kbu810-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);kbu810.step/kbu810.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: MDD（Microdiode Electronics） datasheet (2 pp, sha256
71c9e8b3a1c01d94, retrieved 2026-10-21, tier: lcsc) - Extractor:
ds2sf(Claude). Every pin and dimension is cited to a datasheet page; it refuses to fabricate. - CAD: KiCad official libraries (CC-BY-SA 4.0).