component
AO4406AL
Public Made by Adomby adom
Alpha Omega Semicon MOSFETs, SOIC-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownAO4406AL
Alpha Omega Semicon · MOSFETs · SOIC-8
AO4406AL from Alpha Omega Semicon, in a SOIC-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S | passive | Source of the N-channel MOSFET; the datasheet shows pins 1-3 as source, tied together. |
| 2 | S | passive | Source of the N-channel MOSFET; the datasheet shows pins 1-3 as source, tied together. |
| 3 | S | passive | Source of the N-channel MOSFET; the datasheet shows pins 1-3 as source, tied together. |
| 4 | G | input | Gate of the N-channel MOSFET; the gate-source voltage is rated at ±20V maximum. |
| 5 | D | passive | Drain of the MOSFET; the drain-source voltage is rated at 30V maximum. |
| 6 | D | passive | Drain of the MOSFET; the drain-source voltage is rated at 30V maximum. |
| 7 | D | passive | Drain of the MOSFET; the drain-source voltage is rated at 30V maximum. |
| 8 | D | passive | Drain of the MOSFET; the drain-source voltage is rated at 30V maximum. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Alpha Omega Semicon |
| Package | SOIC-8 |
| Category | Transistors/Thyristors |
| Pins | 8 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | 30 | V | 1 | |||
| Gate-Source Voltage | VGS | -20 | 20 | V | 1 | ||
| Continuous Drain Current | ID | 13 | A | TA=25°C | 1 | ||
| Continuous Drain Current | ID | 10.4 | A | TA=70°C | 1 | ||
| Pulsed Drain Current | IDM | 100 | A | 1 | |||
| Avalanche Current | IAS | 22 | A | Note C | 1 | ||
| Avalanche energy | EAS | 24 | mJ | L=0.1mH | 1 | ||
| Power Dissipation | PD | 3.1 | W | TA=25°C | 1 | ||
| Power Dissipation | PD | 2 | W | TA=70°C | 1 | ||
| Junction and Storage Temperature Range | TJ, TSTG | -55 | 150 | °C | 1 | ||
| Maximum Junction-to-Ambient | RθJA | 31 | 40 | °C/W | t ≤ 10s | 1 | |
| Maximum Junction-to-Ambient | RθJA | 59 | 75 | °C/W | Steady-State | 1 | |
| Maximum Junction-to-Lead | RθJL | 16 | 24 | °C/W | Steady-State | 1 | |
| Drain-Source Breakdown Voltage | BVDSS | 30 | V | ID=250µA, VGS=0V | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | 1 | µA | VDS=30V, VGS=0V | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | 5 | µA | VDS=30V, VGS=0V, TJ=55°C | 2 | ||
| Gate-Body leakage current | IGSS | -100 | 100 | nA | VDS=0V, VGS=±20V | 2 | |
| Gate Threshold Voltage | VGS(th) | 1.5 | 1.9 | 2.5 | V | VDS=VGS ID=250µA | 2 |
| On state drain current | ID(ON) | 100 | A | VGS=10V, VDS=5V | 2 | ||
| Static Drain-Source On-Resistance | RDS(ON) | 9.5 | 11.5 | mΩ | VGS=10V, ID=12A | 2 | |
| Static Drain-Source On-Resistance | RDS(ON) | 14 | 17 | mΩ | VGS=10V, ID=12A, TJ=125°C | 2 | |
| Static Drain-Source On-Resistance | RDS(ON) | 12.5 | 15.5 | mΩ | VGS=4.5V, ID=10A | 2 | |
| Diode Forward Voltage | VSD | 0.75 | 1 | V | IS=1A, VGS=0V | 2 | |
| Maximum Body-Diode Continuous Current | IS | 4 | A | 2 | |||
| Input Capacitance | Ciss | 610 | 760 | 910 | pF | VGS=0V, VDS=15V, f=1MHz | 2 |
| Output Capacitance | Coss | 88 | 125 | 160 | pF | VGS=0V, VDS=15V, f=1MHz | 2 |
| Reverse Transfer Capacitance | Crss | 40 | 70 | 100 | pF | VGS=0V, VDS=15V, f=1MHz | 2 |
| Gate resistance | Rg | 0.8 | 1.6 | 2.4 | Ω | VGS=0V, VDS=0V, f=1MHz | 2 |
| Total Gate Charge (10V) | Qg | 11 | 14 | 17 | nC | VGS=10V, VDS=15V, ID=12A | 2 |
| Total Gate Charge (4.5V) | Qg | 5 | 6.6 | 8 | nC | VGS=4.5V, VDS=15V, ID=12A | 2 |
| Gate Source Charge | Qgs | 1.9 | 2.4 | 2.9 | nC | VGS=4.5V, VDS=15V, ID=12A | 2 |
| Gate Drain Charge | Qgd | 1.8 | 3 | 4.2 | nC | VGS=4.5V, VDS=15V, ID=12A | 2 |
| Body Diode Reverse Recovery Time | trr | 5.6 | 7 | 8 | ns | IF=12A, dI/dt=500A/µs | 2 |
| Body Diode Reverse Recovery Charge | Qrr | 6.4 | 8 | 9.6 | nC | IF=12A, dI/dt=500A/µs | 2 |
| Forward Transconductance | gFS | 45 | S | VDS=5V, ID=12A | 2 | ||
| Turn-On DelayTime | tD(on) | 4.4 | ns | VGS=10V, VDS=15V, RL=1.25Ω, RGEN=3Ω | 2 | ||
| Turn-On Rise Time | tr | 9 | ns | VGS=10V, VDS=15V, RL=1.25Ω, RGEN=3Ω | 2 | ||
| Turn-Off DelayTime | tD(off) | 17 | ns | VGS=10V, VDS=15V, RL=1.25Ω, RGEN=3Ω | 2 | ||
| Turn-Off Fall Time | tf | 6 | ns | VGS=10V, VDS=15V, RL=1.25Ω, RGEN=3Ω | 2 |
CAD (KiCad official)
- Symbol:
AO4406AL - Footprint:
Package_SO:SOIC-8_3.9x4.9mm_P1.27mm - 3D model: SOIC-8 (KiCad packages3D, STEP)
- 3D model files:
ao4406al-etched.step/ao4406al-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);ao4406al.step/ao4406al.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Alpha Omega Semicon datasheet (6 pp, sha256
7cee0903b9aa2afb, retrieved 2026-10-18, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).