component
MJ15022G-JSM
Public Made by Adomby adom
JSMSEMI Bipolar Transistors - BJT, TO-3. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownMJ15022G-JSM
JSMSEMI · Bipolar Transistors - BJT · TO-3
MJ15022G-JSM from JSMSEMI, in a TO-3. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | Base | input | Base terminal of the NPN transistor; maximum base current IB is 5 A. |
| 2 | Emitter | passive | Emitter terminal; emitter-base voltage VEBO max is 5 V (open collector). |
| 3 | Collector | passive | Collector terminal (also the case); IC max 16 A continuous, 30 A peak, VCBO 400 V, VCEO 250 V. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | JSMSEMI |
| Package | TO-3 |
| Category | Triode/MOS Tube/Transistor |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Collector-base voltage | VCBO | 350 | V | Open emitter | 1 | ||
| Collector-emitter voltage | VCEO | 200 | V | Open base | 1 | ||
| Emitter-base voltage | VEBO | 5 | V | Open collector | 1 | ||
| Collector current | IC | 16 | A | 1 | |||
| Collector current-peak | ICM | 30 | A | 1 | |||
| Base current | IB | 5 | A | 1 | |||
| Total power dissipation | PD | 250 | W | TC=25 | 1 | ||
| Junction temperature | Tj | 150 | °C | 1 | |||
| Storage temperature | Tstg | -65 | 200 | °C | 1 | ||
| Thermal resistance junction to case | Rth j-c | 0.7 | °C/W | 1 | |||
| Collector-emitter sustaining voltage | VCEO(SUS) | 200 | V | IC=0.1A; IB=0 | 2 | ||
| Collector-emitter saturation voltage | VCEsat-1 | 1.4 | V | IC=8A; IB=0.8A | 2 | ||
| Collector-emitter saturation voltage | VCEsat-2 | 4 | V | IC=16A; IB=3.2A | 2 | ||
| Base-emitter on voltage | VBE | 2.2 | V | IC=8A; VCE=4V | 2 | ||
| Collector cut-off current | ICEO | 0.5 | mA | VCE=150V; IB=0 | 2 | ||
| Collector cut-off current | ICEX | 0.25 | mA | VCE=200V; VBE(off)=1.5V | 2 | ||
| Emitter cut-off current | IEBO | 0.5 | mA | VEB=5V; IC=0 | 2 | ||
| DC current gain | hFE-1 | 15 | 60 | IC=8A; VCE=4V | 2 | ||
| DC current gain | hFE-2 | 5 | IC=16A; VCE=4V | 2 | |||
| Second breakdown collector current with base forward biased | Is/b | 5 | A | VCE=50Vdc, t=0.5 s, Nonrepetitive | 2 | ||
| Second breakdown collector current with base forward biased | Is/b | 2 | A | VCE=80Vdc, t=0.5 s, Nonrepetitive | 2 | ||
| Output capacitance | COB | 500 | pF | IE=0; VCB=10V; f=1.0MHz | 2 | ||
| Transition frequency | fT | 4 | MHz | IC=1A; VCE=10V; f=1.0MHz | 2 |
CAD (KiCad official)
- Symbol:
MJ15022G-JSM - Footprint:
Package_TO_SOT_THT:TO-3 - 3D model: TO-3 (KiCad packages3D, STEP)
- 3D model files:
mj15022g-jsm-etched.step/mj15022g-jsm-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);mj15022g-jsm.step/mj15022g-jsm.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: JSMSEMI datasheet (4 pp, sha256
bc1f49dd9238f725, retrieved 2026-10-24, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).