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IPB107N20N3G

Public Made by Adom

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Tokmas MOSFETs, TO-263. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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3D Model

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Symbol & Footprint

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Datasheet

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Contents

README

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IPB107N20N3G

Tokmas · MOSFETs · TO-263

IPB107N20N3G from Tokmas, in a TO-263. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate terminal; VGSS is rated ±20 V, and gate threshold VGS(th) is 2.4 V min to 3.6 V max at ID=250 µA.
2 D passive Drain terminal; BVDSS is 200 V min, and continuous drain current ID is 110 A at TC=25°C (silicon limit).
3 S passive Source terminal; continuous source current IS is 110 A max and pulsed source current ISM is 430 A max.

Key specifications

Parameter Value
Manufacturer Tokmas
Package TO-263
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-source breakdown voltage BVDSS 200 V VGS=0V, ID=250uA 2
Gate threshold voltage VGS(th) 2.4 3.6 V VDS=VGS, ID=250uA 2
Drain-source leakage current IDSS 1 μA VDS=200V, VGS=0V, TJ=25°C 2
Drain-source leakage current IDSS 10 mA VDS=200V, VGS=0V, TJ=150°C 2
Gate leakage current, Forward IGSSF 100 nA VGS=20V, VDS=0V 2
Gate leakage current, Reverse IGSSR -100 nA VGS=-20V, VDS=0V 2
Drain-source on-state resistance RDS(on) 9.2 11.5 mΩ VGS=10 V, ID=50 A, TJ=25°C 2
Drain-source on-state resistance RDS(on) 17.04 mΩ VGS=10 V, ID=50 A, TJ=150°C 2
Continuous Source Current IS 110 A 2
Pulsed Source Current ISM 430 A 2
Diode Forward Voltage VSD 1.1 V VGS=0V, IS=50A, TJ=25℃ 2
Drain-Source Voltage VDSS 200 V 1
Continuous drain current (Silicon limit) ID 110 A TC = 25°C, Silicon limit 1
Continuous drain current (Package limit) ID 130 A TC = 25°C, Package limit 1
Continuous drain current (Silicon limit) ID 65 A TC = 100°C, Silicon limit 1
Pulsed drain current IDM 430 A 1
Gate-Source voltage VGSS -20 20 V 1
Avalanche energy EAS 1122 mJ 1
Power Dissipation PD 320 W 1
Storage Temperature Range TSTG -55 150 °C 1
Operating Junction Temperature Range TJ -55 150 °C 1
Soldering temperature (wave soldering, leads) Tsold 260 °C 1.6mm from case for 10s 1
Thermal Resistance, Junction-to-Case RθJC 0.26 °C/W 1
Thermal Resistance, Junction-to-Ambient RθJA 62 °C/W Device in still air box, one cubic foot (note 4) 1

CAD (KiCad official)

  • Symbol: IPB107N20N3G
  • Footprint: Package_TO_SOT_SMD:TO-263-2
  • 3D model: TO-263 (KiCad packages3D, STEP)
  • 3D model files: ipb107n20n3g-etched.step / ipb107n20n3g-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); ipb107n20n3g.step / ipb107n20n3g.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Tokmas datasheet (6 pp, sha256 0171b4804089c5cd, retrieved 2026-10-18, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF