component
SP010N10HTQ
Public Made by Adomby adom
Siliup MOSFETs, TO-220-3L. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
Open in new tab ↗
Loads when you scroll to it. Unloads after 5 minutes in the background.
Symbol & Footprint
Schematic Symbol
Open full view ↗Loads when you scroll to it. Unloads after 5 minutes in the background.
PCB Footprint
Open full view ↗Loads when you scroll to it. Unloads after 5 minutes in the background.
Datasheet
Open in new tab ↗Loads when you scroll to it. Unloads after 5 minutes in the background.
README
markdownSP010N10HTQ
Siliup · MOSFETs · TO-220-3L
SP010N10HTQ from Siliup, in a TO-220-3L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate terminal of the MOSFET; the datasheet rates gate-source voltage VGS at ±20 V. |
| 2 | D | passive | Drain terminal of the MOSFET; the datasheet rates drain-source voltage VDS at 100 V and continuous drain current ID at 100 A (Tc=25℃). |
| 3 | S | passive | Source terminal of the MOSFET; the datasheet rates the diode continuous current IS at 100 A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Siliup |
| Package | TO-220-3L |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | BVDSS | 80 | V | VGS=0V , ID=250uA | 2 | ||
| Drain-Source Leakage Current | IDSS | 1 | uA | VDS=80V , VGS=0V , TJ=25℃ | 2 | ||
| Gate-Source Leakage Current | IGSS | -100 | 100 | nA | VGS=±20V , VDS=0V | 2 | |
| Gate Threshold Voltage | VGS(th) | 2 | 3 | 4 | V | VGS=VDS , ID =250uA | 2 |
| Static Drain-Source On-Resistance | RDS(ON) | 10 | 13 | mΩ | VGS=10V , ID=40A | 2 | |
| Diode Forward Voltage | VSD | 1.2 | V | VGS=0V , IS=40A , TJ=25℃ | 2 | ||
| Diode Continuous Current | IS | 100 | A | 2 | |||
| Drain source voltage | VDS | 100 | V | 2 | |||
| Gate source voltage | VGS | -20 | 20 | V | 2 | ||
| Continuous drain current | ID | 100 | A | Tc=25℃ | 2 | ||
| Continuous drain current | ID | 80 | A | Tc=100℃ | 2 | ||
| Pulsed drain current | IDM | 400 | A | 2 | |||
| Single pulsed avalanche energy | EAS | 720 | mJ | Note 1: starting Tj = 25℃, VDD=50V, VGS = 10V, L = 0.5mH, Rg=25Ω | 2 | ||
| Power dissipation | PD | 200 | W | Tc=25℃ | 2 | ||
| Thermal resistance, junction-case | RθJC | 0.625 | ℃/W | 2 | |||
| Storage Temperature Range | TSTG | -55 | 150 | ℃ | 2 | ||
| Operating Junction Temperature Range | TJ | -55 | 150 | ℃ | 2 |
CAD (KiCad official)
- Symbol:
SP010N10HTQ - Footprint:
Package_TO_SOT_THT:TO-220-3_Vertical - 3D model: TO-220-3L (KiCad packages3D, STEP)
- 3D model files:
sp010n10htq-etched.step/sp010n10htq-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);sp010n10htq.step/sp010n10htq.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Siliup datasheet (6 pp, sha256
bcc7aaf1e8fc4b3f, retrieved 2026-10-31, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).