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Contents

README

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AT21CS11-STU10-T

Microchip Tech · EEPROM · SOT-23-3

AT21CS11-STU10-T from Microchip Tech, in a SOT-23-3. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 SI/O bidirectional Open-drain bidirectional serial input/output that must be pulled high through an external pull-up resistor, and also supplies device power from 2.7V to 4.5V on the AT21CS11.
2 NC unconnected No Connect pin on the 3-lead SOT23 package, with no electrical function specified in the datasheet.
3 GND power_in Ground reference for the power supply, which should be connected to the system ground.

Key specifications

Parameter Value
Manufacturer Microchip Tech
Package SOT-23-3
Category Memory
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Operating Temperature (Case) -40 85 °C Industrial Temperature Range 8
VPUP Pull-up Voltage Voltage Range VPUP 2.7 4.5 V AT21CS11 operating range 8
Pull-up Voltage VPUP 2.7 4.5 V High-Speed mode 9
Pull-up Resistance RPUP 0.2 1.8 kΩ VPUP = 2.7V 9
Pull-up Resistance RPUP 0.4 5.4 kΩ VPUP = 4.5V 9
Active Current, Read IA1 0.08 0.3 mA VPUP = 4.5V; SI/O = VPUP 9
Active Current, Write IA2 0.2 0.5 mA VPUP = 4.5V 9
Standby Current ISB 0.6 1.5 µA VPUP = 2.7V; SI/O = VPUP 9
Standby Current ISB 0.7 3 µA VPUP = 4.5V; SI/O = VPUP 9
Input Low Level VIL -0.6 0.5 V 9
SI/O Hysteresis VHYS 0.128 1.4 V 9
Output Low Level VOL 0 0.4 V IOL = 4 mA 9
Bus Capacitance CBUS 1000 pF 9
Reset Low Time, Device in Inactive State tRESET 96 µs High Speed 10
Discharge Low Time, Device in Active Write Cycle (tWR) tDSCHG 150 µs 10
Reset Recovery Time tRRT 8 µs High Speed 10
Discovery Response Request tDRR 1 µs High Speed 10
Discovery Response Acknowledge Time tDACK 8 24 µs High Speed 10
Master Strobe Discovery Response Time tMSDR 2 6 µs High Speed 10
SI/O High Time for Start/Stop Condition tHTSS 150 µs High Speed 10
Bit Frame Duration tBIT 25 µs Input and Output Bit Frame; High Speed 10
SI/O Low Time, Logic '0' Condition tLOW0 6 16 µs Input Bit Frame; High Speed 10
SI/O Low Time, Logic '1' Condition tLOW1 1 2 µs Input Bit Frame; High Speed 10
Master SI/O Low Time During Read tRD 1 µs Output Bit Frame; High Speed 10
Master Read Strobe Time tMRS 2 µs Output Bit Frame; High Speed 11
Data Output Hold Time (Logic '0') tHLD0 2 6 µs Output Bit Frame; High Speed 11
Slave Recovery Time tRCV 2 µs Input and Output Bit Frame; High Speed 11
Write Cycle Time tWR 5 ms VPUP (min.) < VPUP < VPUP (max.), TA = 25°C, Byte or Page Write mode 11
Write Endurance 1e+06 Write Cycles VPUP (min.) < VPUP < VPUP (max.), TA = 25°C, Byte or Page Write mode 11
Data Retention 100 Years TA = 55°C 11
Temperature under bias -55 125 °C 8
Storage temperature -65 150 °C 8
Voltage on any pin with respect to ground -0.6 V 8
DC output current 15 mA 8

CAD (KiCad official)

  • Symbol: AT21CS11-STU10-T
  • Footprint: Package_TO_SOT_SMD:SOT-23-3
  • 3D model: SOT-23-3 (KiCad packages3D, STEP)
  • 3D model files: at21cs11-stu10-t-etched.step / at21cs11-stu10-t-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); at21cs11-stu10-t.step / at21cs11-stu10-t.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Microchip Tech datasheet (47 pp, sha256 75dfc953749e0deb, retrieved 2026-10-20, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF