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Contents

README

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WMO175N10LG2

Wayon · MOSFETs · TO-252

WMO175N10LG2 from Wayon, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate; gate-source voltage rated ±20 V, threshold 1.0 to 2.5 V, with RDS(on) specified at VGS = 10 V and 4.5 V.
2 D passive Drain; drain-source voltage rated 100 V with 44 A continuous drain current at TC=25°C.
3 S passive Source; continuous body-diode source current 44 A at TC=25°C.

Key specifications

Parameter Value
Manufacturer Wayon
Package TO-252
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDS 100 V 1
Gate-Source Voltage VGS -20 20 V 1
Continuous Drain Current ID 44 A TC=25°C 1
Continuous Drain Current ID 25 A TC=100°C 1
Pulsed Drain Current IDM 176 A Repetitive rating, pulse width limited by TJ(MAX)=150°C 1
Single Pulse Avalanche Energy EAS 80 mJ VDD=25V, VGS=10V, L=0.4mH, IAS=20A 1
Total Power Dissipation PD 65.8 W TC=25°C 1
Operating Junction and Storage Temperature Range TJ, TSTG -55 150 °C 1
Thermal Resistance Junction-to-Ambient RθJA 47 °C/W Surface mounted on 1 inch2 FR-4 board with 2OZ copper 1
Thermal Resistance Junction-to-Case RθJC 1.9 °C/W 1
Drain-Source Breakdown Voltage V(BR)DSS 100 V VGS = 0V, ID = 250µA 2
Gate-Body Leakage Current IGSS 100 nA VDS = 0V, VGS = ±20V 2
Zero Gate Voltage Drain Current IDSS 1 µA VDS = 100V, VGS = 0V, TJ=25°C 2
Zero Gate Voltage Drain Current IDSS 100 µA VDS = 100V, VGS = 0V, TJ=100°C 2
Gate-Threshold Voltage VGS(th) 1 1.7 2.5 V VDS = VGS, ID = 250µA 2
Drain-Source on-Resistance RDS(on) 14 17.5 mΩ VGS = 10V, ID = 20A 2
Drain-Source on-Resistance RDS(on) 18 25 mΩ VGS = 4.5V, ID = 10A 2
Diode Forward Voltage VSD 1.2 V IS = 20A, VGS = 0V 2
Continuous Source Current IS 44 A TC=25°C 2
Forward Transconductance gfs 50 S VDS = 10V, ID = 20A 2
Input Capacitance Ciss 1170 pF VDS = 50V, VGS =0V, f =1MHz 2
Output Capacitance Coss 355 pF VDS = 50V, VGS =0V, f =1MHz 2
Reverse Transfer Capacitance Crss 11 pF VDS = 50V, VGS =0V, f =1MHz 2
Gate Resistance Rg 1.2 Ω f =1MHz 2
Total Gate Charge Qg 17.8 nC VGS = 10V, VDS = 50V, ID= 20A 2
Gate-Source Charge Qgs 3.8 nC VGS = 10V, VDS = 50V, ID= 20A 2
Gate-Drain Charge Qgd 3.1 nC VGS = 10V, VDS = 50V, ID= 20A 2
Turn-on Delay Time td(on) 19.5 ns VGS =10V, VDD = 50V, RG = 3Ω, ID= 20A 2
Rise Time tr 8 ns VGS =10V, VDD = 50V, RG = 3Ω, ID= 20A 2
Turn-off Delay Time td(off) 35 ns VGS =10V, VDD = 50V, RG = 3Ω, ID= 20A 2
Fall Time tf 15 ns VGS =10V, VDD = 50V, RG = 3Ω, ID= 20A 2
Body Diode Reverse Recovery Time trr 36 ns IF = 20A, dI/dt = 100A/µs 2
Body Diode Reverse Recovery Charge Qrr 41 nC IF = 20A, dI/dt = 100A/µs 2

CAD (KiCad official)

  • Symbol: WMO175N10LG2
  • Footprint: Package_TO_SOT_SMD:TO-252-2
  • 3D model: TO-252 (KiCad packages3D, STEP)
  • 3D model files: wmo175n10lg2-etched.step / wmo175n10lg2-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); wmo175n10lg2.step / wmo175n10lg2.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Wayon datasheet (7 pp, sha256 751d62a42cee14a7, retrieved 2026-10-23, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF