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Contents

README

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AGM40P100H

AGM-Semi · MOSFETs · TO-263

AGM40P100H from AGM-Semi, in a TO-263. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate; left pin in the top view, gate-source voltage rated ±20 V with threshold of -1.2 V min to -2.2 V max at ID=-250μA.
2 D passive Drain; centre lead, connected to the exposed drain tab, with drain-source voltage rated -40 V and continuous drain current of -140 A (package limited) at Tc=25℃.
3 S passive Source; right pin in the top view, with body-diode source-drain current up to -140 A.

Key specifications

Parameter Value
Manufacturer AGM-Semi
Package TO-263
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Breakdown Voltage BVDSS -40 V VGS=0V ID=-250μA 2
Zero Gate Voltage Drain Current IDSS -1 μA VDS=-40V,VGS=0V 2
Gate-Body Leakage Current IGSS -100 100 nA VGS=±20V,VDS=0V 2
Gate Threshold Voltage VGS(th) -1.2 -1.6 -2.2 V VDS=VGS,ID=-250μA 2
Drain-Source On-State Resistance RDS(on) 4.6 6.5 mΩ VGS=-10V, ID=-20A 2
Drain-Source On-State Resistance RDS(on) 6 8.6 mΩ VGS=-4.5V, ID=-15A 2
Source-Drain Current (Body Diode) ISD -140 A 2
Forward on Voltage VSD -1.2 V VGS=0V,IS=-20A 2
Forward Transconductance gFS 15 S VDS=-5V,ID=-5A 2
Input Capacitance Ciss 6550 pF VDS=-20V,VGS=0V, F=1MHZ 2
Output Capacitance Coss 515 pF VDS=-20V,VGS=0V, F=1MHZ 2
Reverse Transfer Capacitance Crss 520 pF VDS=-20V,VGS=0V, F=1MHZ 2
Gate resistance Rg 2.5 Ω VGS=0V, VDS=0V,f=1.0MHz 2
Turn-on Delay Time td(on) 41 nS VGS=-10V,VDS=-20V, ID=-12A,RGEN=3Ω 2
Turn-on Rise Time tr 12 nS VGS=-10V,VDS=-20V, ID=-12A,RGEN=3Ω 2
Turn-Off Delay Time td(off) 308 nS VGS=-10V,VDS=-20V, ID=-12A,RGEN=3Ω 2
Turn-Off Fall Time tf 70 nS VGS=-10V,VDS=-20V, ID=-12A,RGEN=3Ω 2
Total Gate Charge Qg 106 nC VGS=-10V, VDS=-20V, ID=-12A 2
Gate-Source Charge Qgs 13 nC VGS=-10V, VDS=-20V, ID=-12A 2
Gate-Drain Charge Qgd 24 nC VGS=-10V, VDS=-20V, ID=-12A 2
Reverse Recovery Time trr 24 ns Isd=-20A , dI/dt=100A/µs , TJ=25℃ 2
Reverse Recovery Charge Qrr 140 nc Isd=-20A , dI/dt=100A/µs , TJ=25℃ 2
Drain-Source Voltage VDS -40 V VGS=0V, TA=25℃ 1
Gate-Source Voltage VGS -20 20 V VDS=0V, TA=25℃ 1
Drain Current-Continuous ID -140 A Tc=25℃, package limited 1
Drain Current-Continuous ID -93 A Tc=100℃ 1
Drain Current-Pulsed IDM -560 A TA=25℃ 1
Maximum Power Dissipation PD 200 w Tc=25℃ 1
Maximum Power Dissipation PD 100 w Tc=100℃ 1
Avalanche energy EAS 420 mJ TJ=25℃,VDD=-20V,Vgs=-10V,ID=-41A,L=0.5mH,RG=25ohm 1
Operating Junction and Storage Temperature Range TJ,TSTG -55 175 ℃ TA=25℃ 1
Thermal Resistance Junction-ambient RθJA 40 ℃/W Steady State 1
Thermal Resistance Junction-Case RθJC 0.92 ℃/W 1

CAD (KiCad official)

  • Symbol: AGM40P100H
  • Footprint: Package_TO_SOT_SMD:TO-263-2
  • 3D model: TO-263 (KiCad packages3D, STEP)
  • 3D model files: agm40p100h-etched.step / agm40p100h-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); agm40p100h.step / agm40p100h.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: AGM-Semi datasheet (7 pp, sha256 3eadec2a85a119ce, retrieved 2026-10-22, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF