component
2SD1815
Public Made by Adomby adom
Changjing Bipolar (BJT), TO-252-2L. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdown2SD1815
Changjing · Bipolar (BJT) · TO-252-2L
2SD1815 from Changjing, in a TO-252-2L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | BASE | input | Base terminal of the NPN transistor, driven with IB1 = -0.15 A in the switching test and tied to VBE(sat) of 1.2 V at IC = 1.5 A, IB = 150 mA. |
| 2 | COLLECTOR | passive | Collector terminal, rated for VCBO 120 V, VCEO 100 V and 3 A continuous collector current, with a maximum collector power dissipation of 1 W. |
| 3 | EMITTER | passive | Emitter terminal, referenced by the emitter-base rating VEBO of 6 V and the emitter-base breakdown test at IE = 10 µA. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Changjing |
| Package | TO-252-2L |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Collector-base breakdown voltage | V(BR)CBO | 120 | V | IC=10μA, IE=0 | 1 | ||
| Collector-emitter breakdown voltage | V(BR)CEO | 100 | V | IC=1mA, IB=0 | 1 | ||
| Emitter-base breakdown voltage | V(BR)EBO | 6 | V | IE=10μA, IC=0 | 1 | ||
| Collector cut-off current | ICBO | 1 | μA | VCB=100V, IE=0 | 1 | ||
| Emitter cut-off current | IEBO | 1 | μA | VEB=4V, IC=0 | 1 | ||
| DC current gain hFE(1) | hFE(1) | 70 | 400 | VCE=5V, IC=500mA | 1 | ||
| DC current gain hFE(2) | hFE(2) | 40 | VCE=5V, IC=2A | 1 | |||
| Collector-emitter saturation voltage | VCE(sat) | 0.4 | V | IC=1.5A, IB=150mA | 1 | ||
| Base-emitter saturation voltage | VBE(sat) | 1.2 | V | IC=1.5A, IB=150mA | 1 | ||
| Collector-base voltage | VCBO | 120 | V | 1 | |||
| Collector-emitter voltage | VCEO | 100 | V | 1 | |||
| Emitter-base voltage | VEBO | 6 | V | 1 | |||
| Collector current - continuous | IC | 3 | A | 1 | |||
| Collector power dissipation | PC | 1 | W | 1 | |||
| Junction temperature | TJ | 150 | ℃ | 1 | |||
| Storage temperature | Tstg | -55 | 150 | ℃ | 1 |
CAD (KiCad official)
- Symbol:
2SD1815 - Footprint:
Package_TO_SOT_SMD:TO-252-2 - 3D model: TO-252-2L (KiCad packages3D, STEP)
- 3D model files:
2sd1815-etched.step/2sd1815-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);2sd1815.step/2sd1815.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Changjing datasheet (3 pp, sha256
24bf4481068189a8, retrieved 2026-10-18, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).