component
AOSP21357
Public Made by Adomby adom
Alpha Omega Semicon MOSFETs, SO-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownAOSP21357
Alpha Omega Semicon · MOSFETs · SO-8
AOSP21357 from Alpha Omega Semicon, in a SO-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S | passive | Source terminal of the -30 V P-channel MOSFET, carrying the drain-source current with a rated drain-source voltage of -30 V. |
| 2 | S | passive | Source terminal of the -30 V P-channel MOSFET, carrying the drain-source current with a rated drain-source voltage of -30 V. |
| 3 | S | passive | Source terminal of the -30 V P-channel MOSFET, carrying the drain-source current with a rated drain-source voltage of -30 V. |
| 4 | G | input | Gate terminal that controls the MOSFET, with a gate-source voltage rating of ±25 V. |
| 5 | D | passive | Drain terminal of the -30 V P-channel MOSFET, rated for continuous drain current of -16 A at TA=25°C. |
| 6 | D | passive | Drain terminal of the -30 V P-channel MOSFET, rated for continuous drain current of -16 A at TA=25°C. |
| 7 | D | passive | Drain terminal of the -30 V P-channel MOSFET, rated for continuous drain current of -16 A at TA=25°C. |
| 8 | D | passive | Drain terminal of the -30 V P-channel MOSFET, rated for continuous drain current of -16 A at TA=25°C. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Alpha Omega Semicon |
| Package | SO-8 |
| Category | Transistors/Thyristors |
| Pins | 8 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | BVDSS | -30 | V | ID=-250mA, VGS=0V | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | -1 | µA | VDS=-30V, VGS=0V | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | -5 | µA | TJ=55°C, VDS=-30V, VGS=0V | 2 | ||
| Gate-Body leakage current | -100 | 100 | nA | VDS=0V, VGS=±25V | 2 | ||
| Gate Threshold Voltage | VGS(th) | -1.3 | -1.75 | -2.3 | V | VDS=VGS, ID=-250mA | 2 |
| Static Drain-Source On-Resistance | RDS(ON) | 7 | 8.5 | mΩ | VGS=-10V, ID=-16A, TJ=25°C | 2 | |
| Static Drain-Source On-Resistance | RDS(ON) | 9.6 | 11.6 | mΩ | TJ=125°C, VGS=-10V, ID=-16A | 2 | |
| Static Drain-Source On-Resistance | RDS(ON) | 10.5 | 13 | mΩ | VGS=-4.5V, ID=-12A | 2 | |
| Forward Transconductance | gFS | 50 | S | VDS=-5V, ID=-16A | 2 | ||
| Diode Forward Voltage | VSD | -0.7 | -1 | V | IS=-1A, VGS=0V | 2 | |
| Maximum Body-Diode Continuous Current | IS | -4 | A | 2 | |||
| Gate resistance | Rg | 14 | 28 | Ω | f=1MHz | 2 | |
| Total Gate Charge (10V) | Qg (10V) | 50 | 70 | nC | VGS=-10V, VDS=-15V, ID=-16A | 2 | |
| Total Gate Charge (4.5V) | Qg (4.5V) | 25 | 35 | nC | 2 | ||
| Gate Source Charge | Qgs | 9 | nC | 2 | |||
| Gate Drain Charge | Qgd | 12 | nC | 2 | |||
| Input Capacitance | Ciss | 2830 | pF | VGS=0V, VDS=-15V, f=1MHz | 2 | ||
| Output Capacitance | Coss | 430 | pF | VGS=0V, VDS=-15V, f=1MHz | 2 | ||
| Reverse Transfer Capacitance | Crss | 365 | pF | VGS=0V, VDS=-15V, f=1MHz | 2 | ||
| Turn-On Delay Time | tD(on) | 12 | ns | VGS=-10V, VDS=-15V, RL=0.95Ω, RGEN=3Ω | 2 | ||
| Turn-On Rise Time | tr | 12.5 | ns | VGS=-10V, VDS=-15V, RL=0.95Ω, RGEN=3Ω | 2 | ||
| Turn-Off Delay Time | tD(off) | 135 | ns | VGS=-10V, VDS=-15V, RL=0.95Ω, RGEN=3Ω | 2 | ||
| Turn-Off Fall Time | tf | 63 | ns | VGS=-10V, VDS=-15V, RL=0.95Ω, RGEN=3Ω | 2 | ||
| Body Diode Reverse Recovery Time | trr | 32 | ns | IF=-16A, di/dt=500A/ms | 2 | ||
| Body Diode Reverse Recovery Charge | Qrr | 62 | nC | IF=-16A, di/dt=500A/ms | 2 | ||
| Drain-Source Voltage | VDS | -30 | V | TA=25°C | 1 | ||
| Gate-Source Voltage | VGS | -25 | 25 | V | 1 | ||
| Continuous Drain Current | ID | -16 | A | TA=25°C | 1 | ||
| Continuous Drain Current | ID | -12.5 | A | TA=70°C | 1 | ||
| Pulsed Drain Current | IDM | -64 | A | 1 | |||
| Avalanche Current | IAS | 39 | A | 1 | |||
| Avalanche energy | EAS | 76 | mJ | L=0.1mH | 1 | ||
| Power Dissipation | PD | 3.1 | W | TA=25°C | 1 | ||
| Power Dissipation | PD | 2 | W | TA=70°C | 1 | ||
| Junction and Storage Temperature Range | TJ, TSTG | -55 | 150 | °C | 1 | ||
| Maximum Junction-to-Ambient (t≤10s) | RθJA | 31 | 40 | °C/W | t≤10s | 1 | |
| Maximum Junction-to-Ambient (Steady-State) | RθJA | 59 | 75 | °C/W | Steady-State | 1 | |
| Maximum Junction-to-Lead (Steady-State) | RθJL | 16 | 24 | °C/W | Steady-State | 1 |
CAD (KiCad official)
- Symbol:
AOSP21357 - Footprint:
Package_SO:SOIC-8_3.9x4.9mm_P1.27mm - 3D model: SO-8 (KiCad packages3D, STEP)
- 3D model files:
aosp21357-etched.step/aosp21357-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);aosp21357.step/aosp21357.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Alpha Omega Semicon datasheet (5 pp, sha256
afeb9b7028b19ce3, retrieved 2026-10-17, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).