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UT2302G-AE2-R

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UTC Unisonic Tech MOSFETs, SOT-23-3. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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Symbol & Footprint

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Datasheet

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Contents

README

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UT2302G-AE2-R

UTC Unisonic Tech · MOSFETs · SOT-23-3

UT2302G-AE2-R from UTC Unisonic Tech, in a SOT-23-3. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 S passive Source terminal of the N-channel enhancement-mode power MOSFET, assigned to pin 1 of the SOT-23-3 package for UT2302G-AE2-R.
2 G input Gate terminal of the N-channel enhancement-mode power MOSFET, assigned to pin 2 of the SOT-23-3 package for UT2302G-AE2-R.
3 D passive Drain terminal of the N-channel enhancement-mode power MOSFET, assigned to pin 3 of the SOT-23-3 package for UT2302G-AE2-R.

Key specifications

Parameter Value
Manufacturer UTC Unisonic Tech
Package SOT-23-3
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDSS 20 V 2
Gate-Source Voltage VGSS -8 8 V Printed as ±8 V 2
Drain Current, Continuous ID 2.4 A Note 1: repetitive rating, pulse width limited by TJ 2
Drain Current, Pulsed IDM 10 A 2
Power Dissipation PD 1.25 W 2
Junction Temperature TJ 150 °C 2
Storage Temperature TSTG -55 150 °C 2
Gate-Source Leakage Current IGSS -100 100 nA VDS =0 V, VGS = ±8V 2
Static Drain-Source On-State Resistance RDS(ON) 75 95 mΩ VGS =2.5 V, ID =3.1 A 2
Turn-ON Delay Time tD(ON) 7 15 ns VDD=10V, R =10 Ω, ID=1A, VGEN =4.5V, RG =6Ω 2
Turn-ON Rise Time tR 55 80 ns VDD=10V, R =10 Ω, ID=1A, VGEN =4.5V, RG =6Ω 2
Turn-OFF Delay Time tD(OFF) 16 60 ns VDD=10V, R =10 Ω, ID=1A, VGEN =4.5V, RG =6Ω 2
Turn-OFF Fall-Time tF 10 25 ns VDD=10V, R =10 Ω, ID=1A, VGEN =4.5V, RG =6Ω 2
Total Gate Charge QG 5.2 10 nC VDS =10V, VGS =4.5 V, ID=3.6 A 2
Drain-Source Diode Forward Voltage VSD 0.76 1.2 V VGS =0 V, IS =1.0 A 2
Maximum Continuous Drain-Source Diode Forward Current IS 1.6 A 2
Drain-Source Breakdown Voltage BVDSS 20 V VGS =0 V, ID =250 µA 2
Drain-Source Leakage Current IDSS 1 µA VDS =20 V, VGS =0 V 2
Gate-Threshold Voltage VGS(TH) 0.45 V VDS =VGS, ID =250 µA 2
Static Drain-Source On-State Resistance RDS(ON) 50 mΩ VGS =4.5 V, ID =7.2 A 2
On State Drain Current ID(ON) 6 A VDS ≥ 5V, VGS =4.5 V (Note 2) 2
Input Capacitance CISS 450 pF VDS =10 V, VGS =0V, f=1MHz 2
Output Capacitance COSS 70 pF VDS =10 V, VGS =0V, f=1MHz 2
Reverse Transfer Capacitance CRSS 43 pF VDS =10 V, VGS =0V, f=1MHz 2
Gate-Source Charge QGS 0.65 nC VDS =10V, VGS =4.5 V, ID=3.6 A 2
Gate-Drain Charge QGD 1.5 nC VDS =10V, VGS =4.5 V, ID=3.6 A 2
Junction to Ambient Thermal Resistance θJA 100 °C/W Note 3: surface mounted on 1 in2 copper pad of FR4 board 2

CAD (KiCad official)

  • Symbol: UT2302G-AE2-R
  • Footprint: Package_TO_SOT_SMD:SOT-23-3
  • 3D model: SOT-23-3 (KiCad packages3D, STEP)
  • 3D model files: ut2302g-ae2-r-etched.step / ut2302g-ae2-r-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); ut2302g-ae2-r.step / ut2302g-ae2-r.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: UTC Unisonic Tech datasheet (5 pp, sha256 5fbf79189653bb28, retrieved 2026-10-17, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF