component
R6006KND3TL1
Public Made by Adomby adom
ROHM Semicon MOSFETs, TO-252. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownR6006KND3TL1
ROHM Semicon · MOSFETs · TO-252
R6006KND3TL1 from ROHM Semicon, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | Gate | input | Gate terminal (1); gate-source voltage limited to ±20V static and ±30V AC (f>1Hz), threshold 3.5 to 5.5V at VDS=10V, ID=1mA. |
| 2 | Drain | passive | Drain terminal (2), also the tab; drain-source voltage rated 600V and continuous drain current ±6A at Tc=25°C. |
| 3 | Source | passive | Source terminal (3); body diode source current is 6A continuous and 18A pulsed at Tc=25°C. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | ROHM Semicon |
| Package | TO-252 |
| Category | Triode/MOS Tube/Transistor |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source voltage | VDSS | 600 | V | Ta = 25°C | 1 | ||
| Continuous drain current | ID | -6 | 6 | A | Tc = 25°C | 1 | |
| Pulsed drain current | IDP | -18 | 18 | A | Pw ≤ 10μs, Duty cycle ≤ 1% | 1 | |
| Gate-Source voltage static | VGSS | -20 | 20 | V | static | 1 | |
| Gate-Source voltage AC | VGSS | -30 | 30 | V | AC (f>1Hz) | 1 | |
| Avalanche current, single pulse | IAS | 1.1 | A | L≒100mH, VDD=50V, RG=25Ω, starting Tj=25℃ | 1 | ||
| Avalanche energy, single pulse | EAS | 65 | mJ | L≒100mH, VDD=50V, RG=25Ω, starting Tj=25℃ | 1 | ||
| Power dissipation | PD | 70 | W | Tc = 25°C | 1 | ||
| Junction temperature | Tj | 150 | ℃ | 1 | |||
| Operating junction and storage temperature range | Tstg | -55 | 150 | ℃ | 1 | ||
| Thermal resistance, junction-case | RthJC | 1.8 | ℃/W | TC=25℃ | 2 | ||
| Thermal resistance, junction-ambient | RthJA | 147 | ℃/W | 2 | |||
| Soldering temperature, wave soldering | Tsold | 265 | ℃ | for 10s | 2 | ||
| Drain-Source breakdown voltage | V(BR)DSS | 600 | V | VGS = 0V, ID = 1mA | 2 | ||
| Zero gate voltage drain current | IDSS | 100 | μA | VDS = 600V, VGS = 0V, Tj = 25°C | 2 | ||
| Zero gate voltage drain current | IDSS | 1000 | μA | VDS = 600V, VGS = 0V, Tj = 125°C | 2 | ||
| Gate-Source leakage current | IGSS | -100 | 100 | nA | VGS = ±20V, VDS = 0V | 2 | |
| Gate threshold voltage | VGS(th) | 3.5 | 5.5 | V | VDS = 10V, ID = 1mA | 2 | |
| Static drain-source on-state resistance | RDS(on) | 720 | 830 | mΩ | VGS = 10V, ID = 3.0A, Tj = 25°C, pulsed | 2 | |
| Static drain-source on-state resistance | RDS(on) | 1600 | mΩ | VGS = 10V, ID = 3.0A, Tj = 125°C, pulsed | 2 | ||
| Gate resistance | RG | 3.4 | Ω | f = 1MHz, open drain | 2 | ||
| Forward transfer admittance | /Yfs/ | 1.5 | 3 | S | VDS = 10V, ID = 3.0A, pulsed | 3 | |
| Input capacitance | Ciss | 350 | pF | VGS = 0V, VDS = 25V, f = 1MHz | 3 | ||
| Output capacitance | Coss | 350 | pF | VGS = 0V, VDS = 25V, f = 1MHz | 3 | ||
| Reverse transfer capacitance | Crss | 20 | pF | VGS = 0V, VDS = 25V, f = 1MHz | 3 | ||
| Turn-on delay time | td(on) | 17 | ns | VDD ⋍ 300V, VGS = 10V, ID = 3.0A, RL ⋍ 100Ω, RG = 10Ω | 3 | ||
| Rise time | tr | 22 | ns | VDD ⋍ 300V, VGS = 10V, ID = 3.0A, RL ⋍ 100Ω, RG = 10Ω | 3 | ||
| Turn-off delay time | td(off) | 30 | ns | VDD ⋍ 300V, VGS = 10V, ID = 3.0A, RL ⋍ 100Ω, RG = 10Ω | 3 | ||
| Fall time | tf | 30 | ns | VDD ⋍ 300V, VGS = 10V, ID = 3.0A, RL ⋍ 100Ω, RG = 10Ω | 3 | ||
| Total gate charge | Qg | 12 | nC | VDD ⋍ 300V, ID = 6A, VGS = 10V | 3 | ||
| Gate-Source charge | Qgs | 3.5 | nC | VDD ⋍ 300V, ID = 6A, VGS = 10V | 3 | ||
| Gate-Drain charge | Qgd | 5.6 | nC | VDD ⋍ 300V, ID = 6A, VGS = 10V | 3 | ||
| Gate plateau voltage | V(plateau) | 6.2 | V | VDD ⋍ 300V, ID = 6A | 3 | ||
| Source current (body diode) | IS | 6 | A | TC = 25℃ | 4 | ||
| Pulsed source current (body diode) | ISP | 18 | A | TC = 25℃ | 4 | ||
| Source-Drain voltage | VSD | 1.5 | V | VGS = 0V, IS = 6A | 4 | ||
| Reverse recovery time | trr | 290 | ns | IS = 6A, di/dt = 100A/μs | 4 | ||
| Reverse recovery charge | Qrr | 2.2 | μC | IS = 6A, di/dt = 100A/μs | 4 | ||
| Peak reverse recovery current | Irr | 15 | A | IS = 6A, di/dt = 100A/μs | 4 |
CAD (KiCad official)
- Symbol:
R6006KND3TL1 - Footprint:
Package_TO_SOT_SMD:TO-252-2 - 3D model: TO-252 (KiCad packages3D, STEP)
- 3D model files:
r6006knd3tl1-etched.step/r6006knd3tl1-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);r6006knd3tl1.step/r6006knd3tl1.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: ROHM Semicon datasheet (15 pp, sha256
22b0d2d8129c9613, retrieved 2026-10-27, tier: manufacturer) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).