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AOD66406

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Alpha Omega Semicon MOSFETs, TO-252. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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3D Model

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Symbol & Footprint

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PCB Footprint

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Datasheet

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Contents

README

markdown

AOD66406

Alpha Omega Semicon · MOSFETs · TO-252

AOD66406 from Alpha Omega Semicon, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate; logic-level drive with VGS(th) 1.5 to 2.5 V and absolute maximum VGS of ±20 V.
2 D passive Drain, connected to the exposed tab; VDS maximum 40 V and continuous ID 60 A at TC=25°C (package limited).
3 S passive Source; body diode continuous current maximum 50 A.

Key specifications

Parameter Value
Manufacturer Alpha Omega Semicon
Package TO-252
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Breakdown Voltage BVDSS 40 V ID=250mA, VGS=0V 2
Zero Gate Voltage Drain Current IDSS 1 μA VDS=40V, VGS=0V 2
Zero Gate Voltage Drain Current (TJ=55°C) IDSS 5 μA TJ=55°C, VDS=40V, VGS=0V 2
Gate-Body leakage current IGSS -100 100 nA VDS=0V, VGS=±20V 2
Gate Threshold Voltage VGS(th) 1.5 2 2.5 V VDS=VGS, ID=250mA 2
Static Drain-Source On-Resistance RDS(ON) 5 6.1 mΩ VGS=10V, ID=20A 2
Static Drain-Source On-Resistance (TJ=125°C) RDS(ON) 7.5 9.1 mΩ VGS=10V, ID=20A, TJ=125°C 2
Static Drain-Source On-Resistance RDS(ON) 7.4 9.4 mΩ VGS=4.5V, ID=20A 2
Diode Forward Voltage VSD 0.7 1 V IS=1A, VGS=0V 2
Maximum Body-Diode Continuous Current IS 50 A 2
Gate resistance Rg 0.9 1.8 2.7 Ω f=1MHz 2
Total Gate Charge (10V) Qg (10V) 20 30 nC VGS=10V, VDS=20V, ID=20A 2
Total Gate Charge (4.5V) Qg (4.5V) 8.5 14 nC 2
Drain-Source Voltage VDS 40 V 1
Gate-Source Voltage VGS -20 20 V 1
Junction and Storage Temperature Range TJ, TSTG -55 150 °C 1
Avalanche energy EAS 60 mJ L=0.3mH 1
Power Dissipation (TA=25°C) PDSM 6.2 W TA=25°C 1
Power Dissipation (TA=70°C) PDSM 4 W TA=70°C 1
Power Dissipation (TC=25°C) PD 52 W TC=25°C 1
Power Dissipation (TC=100°C) PD 20.5 W TC=100°C 1
Maximum Junction-to-Ambient RθJA 15 20 °C/W t ≤ 10s 1
Maximum Junction-to-Ambient RθJA 40 50 °C/W Steady-State 1

CAD (KiCad official)

  • Symbol: AOD66406
  • Footprint: Package_TO_SOT_SMD:TO-252-2
  • 3D model: TO-252 (KiCad packages3D, STEP)
  • 3D model files: aod66406-etched.step / aod66406-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); aod66406.step / aod66406.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Alpha Omega Semicon datasheet (6 pp, sha256 5c883ba6532640c4, retrieved 2026-10-19, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF