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Contents

README

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HSM6115

HUASHUO · MOSFETs · SOP-8

HSM6115 from HUASHUO, in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 S passive Source of the P-channel MOSFET; the drawing shows S on the three pins at the left of the bottom row, and VDS is rated -60 V.
2 S passive Source of the P-channel MOSFET, shown as the second S pin on the package drawing; continuous drain current is rated -11 A at TC=25℃.
3 S passive Source of the P-channel MOSFET, shown as the third S pin on the package drawing; pulsed drain current is rated -22 A.
4 G input Gate of the P-channel MOSFET; the gate-source voltage is rated ±20 V and the gate threshold voltage is -1.0 V min to -2.5 V max.
5 D passive Drain of the P-channel MOSFET, one of four drain pins on the top row; VDS is rated -60 V and RDS(ON) is 25 mΩ max at VGS=-10V.
6 D passive Drain of the P-channel MOSFET, one of four drain pins on the top row; continuous drain current is rated -11 A at TC=25℃.
7 D passive Drain of the P-channel MOSFET, one of four drain pins on the top row; pulsed drain current is rated -22 A.
8 D passive Drain of the P-channel MOSFET, one of four drain pins on the top row; drain-source breakdown voltage is -60 V min at ID=-250uA.

Key specifications

Parameter Value
Manufacturer HUASHUO
Package SOP-8
Category Transistors/Thyristors
Pins 8

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Breakdown Voltage BVDSS -60 V VGS=0V, ID=-250uA 2
Static Drain-Source On-Resistance RDS(ON) 25 mΩ VGS=-10V, ID=-10A 2
Static Drain-Source On-Resistance RDS(ON) 33 mΩ VGS=-4.5V, ID=-8A 2
Gate Threshold Voltage VGS(th) -1 -1.7 -2.5 V VGS=VDS, ID=-250uA 2
Drain-Source Leakage Current IDSS 1 uA VDS=-48V, VGS=0V, TJ=25℃ 2
Drain-Source Leakage Current IDSS 5 uA VDS=-48V, VGS=0V, TJ=55℃ 2
Gate-Source Leakage Current IGSS -100 100 nA VGS=±20V, VDS=0V 2
Continuous Source Current IS -11 A VG=VD=0V, Force Current 2
Pulsed Source Current ISM -22 A 2
Diode Forward Voltage VSD -1 V VGS=0V, IS=-1A, TJ=25℃ 2
Drain-Source Voltage VDS -60 -60 V 1
Gate-Source Voltage VGS -20 20 V 1
Continuous Drain Current ID@TC=25℃ -11 A -VGS @ -10V 1
Continuous Drain Current ID@TC=100℃ -8.5 A -VGS @ -10V 1
Pulsed Drain Current IDM -22 A 1
Single Pulse Avalanche Energy EAS 113 mJ 1
Avalanche Current IAS 47.6 A 1
Total Power Dissipation PD@TC=25℃ 5.2 W 1
Storage Temperature Range TSTG -55 150 ℃ 1
Operating Junction Temperature Range TJ -55 150 ℃ 1
Thermal Resistance Junction-Ambient RθJA 85 ℃/W 1
Thermal Resistance Junction-Case RθJC 24 ℃/W 1

CAD (KiCad official)

  • Symbol: HSM6115
  • Footprint: Package_SO:SOIC-8_3.9x4.9mm_P1.27mm
  • 3D model: SOP-8 (KiCad packages3D, STEP)
  • 3D model files: hsm6115-etched.step / hsm6115-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); hsm6115.step / hsm6115.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: HUASHUO datasheet (6 pp, sha256 155fd0c491ec4ac3, retrieved 2026-10-17, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF