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Contents

Pinout
Key specifications
Electrical characteristics
CAD (KiCad official)
Provenance

README

markdown

UMT3904T106

ROHM Semicon · Bipolar (BJT) · SOT-323

UMT3904T106 from ROHM Semicon, in a SOT-323. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin	Name	Type	Function
1	Emitter	passive	Emitter of the NPN transistor; VEBO maximum is 6 V.
2	Base	passive	Base of the NPN transistor; emitter-base breakdown BVEBO is at least 6 V at IE = 10 µA.
3	Collector	passive	Collector of the NPN transistor; VCEO is 40 V, VCBO is 60 V and IC maximum is 200 mA.

Key specifications

Parameter	Value
Manufacturer	ROHM Semicon
Package	SOT-323
Category	Transistors/Thyristors
Pins	3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter	Symbol	Min	Max	Unit	Conditions	Page
Collector-base breakdown voltage	BVCBO	60		V	IC = 10μA	2
Collector-emitter breakdown voltage	BVCEO	40		V	IC = 1mA	2
Emitter-base breakdown voltage	BVEBO	6		V	IE = 10μA	2
Collector cut-off current	ICES		50	nA	VCE = 30V	2
Emitter cut-off current	IEBO		50	nA	VEB = 3V	2
Collector-emitter saturation voltage	VCE(sat)1		200	mV	IC = 10mA, IB = 1mA	2
Collector-emitter saturation voltage	VCE(sat)2		300	mV	IC = 50mA, IB = 5mA	2
Base-emitter saturation voltage	VBE(sat)1	650	850	mV	IC = 10mA, IB = 1mA	2
Base-emitter saturation voltage	VBE(sat)2		950	mV	IC = 50mA, IB = 5mA	2
DC current gain	hFE1	40		-	VCE = 1V, IC = 100μA	2
DC current gain	hFE2	70		-	VCE = 1V, IC = 1mA	2
DC current gain	hFE3	100	300	-	VCE = 1V, IC = 10mA	2
DC current gain	hFE4	60		-	VCE = 1V, IC = 50mA	2
DC current gain	hFE5	30		-	VCE = 1V, IC = 100mA	2
Output capacitance	Cob		4	pF	VCB = 10V, IE = 0A, f = 100kHz	2
Input capacitance	Cib		8	pF	VBE = 0.5V, IC = 0A, f = 100kHz	2
Transition frequency	fT	300		MHz	VCE = 20V, IE = -10mA, f = 100MHz	2
Delay time	td		35	ns	VCC ≈ 3V, IC = 10mA, IB1 = 1mA, RL = 300Ω, VBE(off) = -500mV, see test circuit; pulsed	2
Rise time	tr		35	ns		2
Storage time	tstg		200	ns	VCC ≈ 3V, IC = 10mA, IB1 = 1mA, IB2 = -1mA, RL = 300Ω, see test circuit; pulsed	2
Fall time	tf		50	ns		2
Collector-base voltage	VCBO		60	V	Ta = 25°C	1
Collector-emitter voltage	VCEO		40	V	Ta = 25°C	1
Emitter-base voltage	VEBO		6	V	Ta = 25°C	1
Collector current	IC		200	mA	Ta = 25°C	1
Power dissipation	PD		200	mW	Ta = 25°C; each terminal mounted on a reference land	1
Junction temperature	Tj		150	℃	Ta = 25°C	1
Range of storage temperature	Tstg	-55	150	℃	Ta = 25°C	1

CAD (KiCad official)

Symbol: UMT3904T106
Footprint: Package_TO_SOT_SMD:SOT-323_SC-70
3D model: SOT-323 (KiCad packages3D, STEP)
3D model files: umt3904t106-etched.step / umt3904t106-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); umt3904t106.step / umt3904t106.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

Datasheet: ROHM Semicon datasheet (6 pp, sha256 d90f173f1d46d6be, retrieved 2026-10-17, tier: lcsc)
Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF