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STP10NK80ZFP
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STMicroelectronics MOSFETs, TO-220FP. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownSTP10NK80ZFP
STMicroelectronics · MOSFETs · TO-220FP
STP10NK80ZFP from STMicroelectronics, in a TO-220FP. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate terminal of the Zener-protected MOSFET; gate-source voltage is rated ±30 V and the built-in back-to-back Zener has a gate-source breakdown voltage of 30 V at Igs=±1 mA. |
| 2 | D | passive | Drain terminal; drain-source voltage VDSS is 800 V and continuous drain current is 9 A at TC = 25°C for the TO-220FP package. |
| 3 | S | passive | Source terminal; source-drain current is rated 9 A continuous and 36 A pulsed. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | STMicroelectronics |
| Package | TO-220FP |
| Category | Transistors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-source voltage | VDSS | 800 | V | VGS = 0 | 3 | ||
| Drain-gate voltage | VDGR | 800 | V | RGS = 20kΩ | 3 | ||
| Gate-source voltage | VGS | -30 | 30 | V | 3 | ||
| Drain current (continuous) at TC = 25°C | ID | 9 | A | TC = 25°C | 3 | ||
| Drain current (continuous) at TC=100°C | ID | 6 | A | TC=100°C | 3 | ||
| Drain current (pulsed) | IDM | 36 | A | Pulse width limited by safe operating area | 3 | ||
| Total dissipation at TC = 25°C | PTOT | 40 | W | TC = 25°C | 3 | ||
| Derating factor | 0.32 | W/°C | 3 | ||||
| G-S ESD (HBM) | Vesd(G-S) | 4 | kV | HBM C=100pF, R=1.5kΩ | 3 | ||
| Peak diode recovery voltage slope | dv/dt | 4.5 | V/ns | ISD ≤ 9 A, di/dt ≤ 200 A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX | 3 | ||
| Insulation withstand voltage (DC) | VISO | 2500 | V | DC | 3 | ||
| Operating junction temperature | TJ | -55 | 150 | °C | 3 | ||
| Storage temperature | Tstg | -55 | 150 | °C | 3 | ||
| Avalanche current, repetitive or not-repetitive | IAS | 9 | A | Pulse width limited by Tj Max | 3 | ||
| Single pulse avalanche energy | EAS | 290 | mJ | Starting Tj=25°C, Id=Iar, Vdd=50V | 3 | ||
| Thermal resistance junction-case | Rthj-case | 3.1 | °C/W | TO-220FP column | 3 | ||
| Thermal resistance junction-ambient | Rthj-a | 50 | °C/W | 3 | |||
| Drain-source breakdown voltage | V(BR)DSS | 800 | V | ID = 1mA, VGS= 0 | 4 | ||
| Zero gate voltage drain current | IDSS | 1 | µA | VDS = 800V | 4 | ||
| Zero gate voltage drain current at TC = 125°C | IDSS | 50 | µA | VDS = 800V, TC = 125°C | 4 | ||
| Gate body leakage current | IGSS | -10 | 10 | µA | VDS = 0, VGS = ±20V | 4 | |
| Static drain-source on resistance | RDS(on) | 0.78 | 0.9 | Ω | VGS= 10V, ID= 4.5A | 4 | |
| Gate-source breakdown voltage | BVGSO | 30 | V | Igs=±1mA (open drain) | 5 | ||
| Source-drain current | ISD | 9 | A | 5 | |||
| Source-drain current (pulsed) | ISDM | 36 | A | Pulse width limited by safe operating area | 5 | ||
| Forward transconductance | gfs | 9.6 | S | VDS =15V, ID = 4.5A | 4 | ||
| Input capacitance | Ciss | 2180 | pF | VDS =25V, f=1 MHz, VGS=0 | 4 | ||
| Output capacitance | Coss | 205 | pF | VDS =25V, f=1 MHz, VGS=0 | 4 | ||
| Reverse transfer capacitance | Crss | 38 | pF | VDS =25V, f=1 MHz, VGS=0 | 4 | ||
| Equivalent output capacitance | Coss eq | 105 | pF | VGS=0, VDS =0V to 640V | 4 | ||
| Total gate charge | Qg | 72 | nC | VDD=640V, ID = 9A, VGS =10V | 4 | ||
| Gate-source charge | Qgs | 12.5 | nC | VDD=640V, ID = 9A, VGS =10V | 4 | ||
| Gate-drain charge | Qgd | 37 | nC | VDD=640V, ID = 9A, VGS =10V | 4 | ||
| Turn-on delay time | td(on) | 30 | ns | VDD=400 V, ID=4.5A, RG=4.7Ω, VGS=10V | 5 | ||
| Rise time | tr | 20 | ns | VDD=400 V, ID=4.5A, RG=4.7Ω, VGS=10V | 5 | ||
| Turn-off delay time | td(off) | 65 | ns | VDD=400 V, ID=4.5A, RG=4.7Ω, VGS=10V | 5 | ||
| Fall time | tf | 17 | ns | VDD=400 V, ID=4.5A, RG=4.7Ω, VGS=10V | 5 | ||
| Forward on voltage | VSD | 1.6 | V | ISD=9A, VGS=0 | 5 | ||
| Reverse recovery time | trr | 645 | ns | ISD=9A, di/dt = 100A/µs, VDD=45V, Tj=150°C | 5 | ||
| Reverse recovery charge | Qrr | 6.4 | µC | ISD=9A, di/dt = 100A/µs, VDD=45V, Tj=150°C | 5 | ||
| Reverse recovery current | IRRM | 20 | A | ISD=9A, di/dt = 100A/µs, VDD=45V, Tj=150°C | 5 |
CAD (KiCad official)
- Symbol:
STP10NK80ZFP - Footprint:
Package_TO_SOT_THT:TO-220F-3_Vertical - 3D model: TO-220FP (KiCad packages3D, STEP)
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: STMicroelectronics datasheet (17 pp, sha256
ce277fa3393a214a, retrieved 2026-10-27, tier: manufacturer) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).