component
MMBT9015C
Public Made by Adomby adom
PJSEMI Bipolar (BJT), SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownMMBT9015C
PJSEMI · Bipolar (BJT) · SOT-23
MMBT9015C from PJSEMI, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | Base | input | Base terminal of the PNP transistor, where the emitter-base voltage is limited to -VEBO 5 V maximum and the emitter-base breakdown voltage is 5 V minimum at -IE = 100 μA. |
| 2 | Emitter | passive | Emitter terminal of the PNP transistor, with the absolute maximum emitter-base voltage rated at -VEBO 5 V. |
| 3 | Collector | passive | Collector terminal of the PNP transistor, rated for a maximum collector current of -IC 100 mA and a collector-emitter voltage of -VCEO 45 V. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | PJSEMI |
| Package | SOT-23 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| DC current gain, Current Gain Group B | HFE | 110 | 220 | at -VCE = 5 V, -IC = 1 mA | 1 | ||
| DC current gain, Current Gain Group C | HFE | 200 | 450 | at -VCE = 5 V, -IC = 1 mA | 1 | ||
| DC current gain, Current Gain Group D | HFE | 420 | 800 | at -VCE = 5 V, -IC = 1 mA | 1 | ||
| Collector Base Cutoff Current | -ICBO | 50 | nA | at -VCB = 50 V | 1 | ||
| Emitter Base Cutoff Current | -IEBO | 50 | nA | at -VEB = 5 V | 1 | ||
| Collector Base Breakdown Voltage | -V(BR)CBO | 50 | V | at -IC = 100 μA | 1 | ||
| Collector Emitter Breakdown Voltage | -V(BR)CEO | 45 | V | at -IC = 1 mA | 1 | ||
| Emitter Base Breakdown Voltage | -V(BR)EBO | 5 | V | at -IE = 100 μA | 1 | ||
| Collector Emitter Saturation Voltage | VCE(sat) | 0.65 | V | at -IC = 100 mA, -IB = 5 mA | 1 | ||
| Base Emitter Saturation Voltage | VBE(sat) | 1 | V | at -IC = 100 mA, -IB = 5 mA | 1 | ||
| Transition Frequency | FT | 100 | MHz | at -VCE = 5 V, -IC = 10 mA | 1 | ||
| Collector Base Capacitance | Cob | 7 | pF | at -VCB = 10 V, f = 1 MHz | 1 | ||
| Collector Base Voltage | -VCBO | 50 | V | 1 | |||
| Collector Emitter Voltage | -VCEO | 45 | V | 1 | |||
| Emitter Base Voltage | -VEBO | 5 | V | 1 | |||
| Collector Current | -IC | 100 | mA | 1 | |||
| Power Dissipation | PD | 200 | mW | 1 | |||
| Junction Temperature | TJ | 150 | ℃ | 1 | |||
| Storage Temperature Range | TSTG | -55 | 150 | ℃ | 1 |
CAD (KiCad official)
- Symbol:
MMBT9015C - Footprint:
Package_TO_SOT_SMD:SOT-23 - 3D model: SOT-23 (KiCad packages3D, STEP)
- 3D model files:
mmbt9015c-etched.step/mmbt9015c-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);mmbt9015c.step/mmbt9015c.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: PJSEMI datasheet (3 pp, sha256
6f86f9ee028aa0d8, retrieved 2026-10-18, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).