component
2SK3326-VB
Public Made by Adomby adom
VBsemi Elec MOSFETs, TO-220AB. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdown2SK3326-VB
VBsemi Elec · MOSFETs · TO-220AB
2SK3326-VB from VBsemi Elec, in a TO-220AB. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate of the N-channel MOSFET, rated VGS ±20 V with threshold VGS(th) 2.0 to 4.0 V at ID = 250 μA. |
| 2 | D | passive | Drain (also connected to the tab), rated VDS 500 V with continuous ID 13 A at TC = 25 °C and RDS(on) 0.660 Ω at VGS = 10 V. |
| 3 | S | passive | Source of the N-channel MOSFET, carrying the continuous drain current up to 13 A at TC = 25 °C and the body diode current (IS pulsed up to 56 A). |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | VBsemi Elec |
| Package | TO-220AB |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | VDS | 500 | V | VGS = 0 V, ID = 250 μA | 2 | ||
| Gate-Source Threshold Voltage | VGS(th) | 2 | 4 | V | VDS = VGS, ID = 250 μA | 2 | |
| Gate-Source Leakage | IGSS | 100 | nA | VGS = ± 20V | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | 25 | μA | VDS = 500 V, VGS = 0 V | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | 250 | μA | VDS = 400 V, VGS = 0 V, TJ = 125 °C | 2 | ||
| Drain-Source On-State Resistance | RDS(on) | 0.66 | Ω | VGS = 10 V, ID = 8.4 A | 2 | ||
| Forward Transconductance | gfs | 8.1 | S | VDS = 50 V, ID = 8.4 A | 2 | ||
| Total Gate Charge | Qg | 81 | nC | VGS = 10 V, ID = 14 A, VDS = 400 V | 2 | ||
| Gate-Source Charge | Qgs | 20 | nC | VGS = 10 V, ID = 14 A, VDS = 400 V | 2 | ||
| Gate-Drain Charge | Qgd | 36 | nC | VGS = 10 V, ID = 14 A, VDS = 400 V | 2 | ||
| Pulsed Diode Forward Current | ISM | 56 | A | 2 | |||
| Body Diode Voltage | VSD | 1.5 | V | TJ = 25 °C, IS = 14 A, VGS = 0 V | 2 | ||
| Body Diode Reverse Recovery Time | trr | 370 | 550 | ns | TJ = 25 °C, IF = 14 A, dI/dt = 100 A/μs | 2 | |
| Body Diode Reverse Recovery Charge | Qrr | 4.4 | 6.5 | μC | TJ = 25 °C, IF = 14 A, dI/dt = 100 A/μs | 2 | |
| Body Diode Reverse Recovery Current | IRRM | 21 | 31 | A | TJ = 25 °C, IF = 14 A, dI/dt = 100 A/μs | 2 | |
| Drain-Source Voltage | VDS | 500 | V | TC = 25 °C | 1 | ||
| Gate-Source Voltage | VGS | -20 | 20 | V | TC = 25 °C | 1 | |
| Continuous Drain Current | ID | 13 | A | VGS at 10 V, TC = 25 °C | 1 | ||
| Continuous Drain Current | ID | 8.1 | A | VGS at 10 V, TC = 100 °C | 1 | ||
| Pulsed Drain Current | IDM | 50 | A | 1 | |||
| Single Pulse Avalanche Energy | EAS | 560 | mJ | 1 | |||
| Avalanche Current | IAR | 13 | A | 1 | |||
| Repetitive Avalanche Energy | EAR | 25 | mJ | 1 | |||
| Maximum Power Dissipation | PD | 250 | W | TC = 25 °C | 1 | ||
| Peak Diode Recovery dV/dt | dV/dt | 9.2 | V/ns | 1 | |||
| Operating Junction and Storage Temperature Range | TJ, Tstg | -55 | 150 | °C | 1 | ||
| Soldering Recommendations (Peak Temperature) | 300 | °C | for 10 s, 1.6 mm from case | 1 | |||
| Maximum Junction-to-Ambient | RthJA | 62 | °C/W | 2 | |||
| Maximum Junction-to-Case (Drain) | RthJC | 0.5 | °C/W | 2 | |||
| Case-to-Sink, Flat, Greased Surface | RthCS | 0.5 | °C/W | 2 | |||
| VDS Temperature Coefficient | ΔVDS/TJ | 0.55 | V/°C | Reference to 25 °C, ID = 1 mA | 2 | ||
| Input Capacitance | Ciss | 1910 | pF | VGS = 0 V, VDS = 25 V, f = 1.0 MHz | 2 | ||
| Output Capacitance | Coss | 290 | pF | VGS = 0 V, VDS = 25 V, f = 1.0 MHz | 2 | ||
| Reverse Transfer Capacitance | Crss | 11 | pF | VGS = 0 V, VDS = 25 V, f = 1.0 MHz | 2 | ||
| Turn-On Delay Time | td(on) | 15 | ns | VDD = 250 V, ID = 14 A, Rg = 7.5 Ω | 2 | ||
| Rise Time | tr | 39 | ns | VDD = 250 V, ID = 14 A, Rg = 7.5 Ω | 2 | ||
| Turn-Off Delay Time | td(off) | 39 | ns | VDD = 250 V, ID = 14 A, Rg = 7.5 Ω | 2 | ||
| Fall Time | tf | 31 | ns | VDD = 250 V, ID = 14 A, Rg = 7.5 Ω | 2 |
CAD (KiCad official)
- Symbol:
2SK3326-VB - Footprint:
Package_TO_SOT_THT:TO-220-3_Vertical - 3D model: TO-220AB (KiCad packages3D, STEP)
- 3D model files:
2sk3326-vb-etched.step/2sk3326-vb-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);2sk3326-vb.step/2sk3326-vb.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: VBsemi Elec datasheet (9 pp, sha256
7bf0ba12ebee485e, retrieved 2026-10-27, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).