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FH8810BT6

Public Made by Adom

by adom

XIN FEI HONG MOSFETs, TSSOP-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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3D Model

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Symbol & Footprint

Schematic Symbol

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Datasheet

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Contents

README

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FH8810BT6

XIN FEI HONG · MOSFETs · TSSOP-8

FH8810BT6 from XIN FEI HONG, in a TSSOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 D passive Common drain of the two N-channel MOSFETs (D1 and D2 tied together in the schematic), VDS max 20 V.
2 S1 passive Source of MOSFET 1.
3 S1 passive Source of MOSFET 1.
4 G1 input Gate of MOSFET 1, VGS max ±10 V.
5 G2 input Gate of MOSFET 2, VGS max ±10 V.
6 S2 passive Source of MOSFET 2.
7 S2 passive Source of MOSFET 2.
8 D passive Common drain of the two N-channel MOSFETs (D1 and D2 tied together in the schematic), VDS max 20 V.

Key specifications

Parameter Value
Manufacturer XIN FEI HONG
Package TSSOP-8
Category Triode/MOS Tube/Transistor
Pins 8

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDS 20 V 1
Gate-Source Voltage VGS -10 10 V printed as ±10 1
Continuous Drain Current (note a, d) ID 6.3 A TA=25°C, t≤10 s 1
Continuous Drain Current (note a, d) ID 5.7 A TA=25°C, steady state 1
Continuous Drain Current (note a, d) ID 5 A TA=70°C, t≤10 s 1
Continuous Drain Current (note a, d) ID 4.6 A TA=70°C, steady state 1
Maximum Power Dissipation (note a, d) PD 1.5 W TA=25°C, t≤10 s 1
Maximum Power Dissipation (note a, d) PD 1 W TA=25°C, steady state 1
Maximum Power Dissipation (note a, d) PD 0.9 W TA=70°C, t≤10 s 1
Maximum Power Dissipation (note a, d) PD 0.7 W TA=70°C, steady state 1
Continuous Drain Current (note b) ID 5.8 A TA=25°C, t≤10 s 1
Continuous Drain Current (note b) ID 5.2 A TA=25°C, steady state 1
Continuous Drain Current (note b) ID 4.6 A TA=70°C, t≤10 s 1
Continuous Drain Current (note b) ID 4.1 A TA=70°C, steady state 1
Maximum Power Dissipation (note b) PD 0.9 W TA=25°C, t≤10 s 1
Maximum Power Dissipation (note b) PD 0.7 W TA=25°C, steady state 1
Maximum Power Dissipation (note b) PD 0.6 W TA=70°C, t≤10 s 1
Maximum Power Dissipation (note b) PD 0.5 W TA=70°C, steady state 1
Pulsed Drain Current (note c) IDM 30 A pulse width <380 µs, duty cycle <2% 1
Operating Junction Temperature TJ -55 150 °C 1
Lead Temperature TL 260 °C 1
Storage Temperature Range Tstg -55 150 °C 1
Gate-to-source Leakage Current IGSS -100 100 nA VDS = 0 V, VGS = ±10 V; printed as ±100 3
Gate Threshold Voltage VGS(TH) 0.45 0.7 1 V VGS = VDS, ID = 250 µA 3
Drain-to-source On-resistance RDS(on) 12 15 18 mΩ VGS = 4.5 V, ID = 4 A 3
Drain-to-source On-resistance RDS(on) 13 16 19 mΩ VGS = 3.8 V, ID = 4 A 3
Drain-to-source On-resistance RDS(on) 14 17.5 21 mΩ VGS = 3.1 V, ID = 4 A 3
Drain-to-source On-resistance RDS(on) 15 19 23 mΩ VGS = 2.5 V, ID = 2.5 A 3
Forward Voltage VSD 0.65 1.2 V VGS = 0 V, IS = 1.0 A 3
Junction-to-Ambient Thermal Resistance (note a), single operation RθJA 76 94 °C/W t≤10 s, surface mounted on FR-4, 1 sq in pad, 1oz Cu 2
Junction-to-Ambient Thermal Resistance (note a), single operation RθJA 115 145 °C/W steady state, surface mounted on FR-4, 1 sq in pad, 1oz Cu 2
Junction-to-Ambient Thermal Resistance (note b), single operation RθJA 92 115 °C/W t≤10 s, surface mounted on FR-4, minimum pad, 1oz Cu 2
Junction-to-Ambient Thermal Resistance (note b), single operation RθJA 135 175 °C/W steady state, surface mounted on FR-4, minimum pad, 1oz Cu 2
Junction-to-Case Thermal Resistance, single operation RθJC 63 78 °C/W steady state 2
Junction-to-Ambient Thermal Resistance (note a), dual operation RθJA 79 97 °C/W t≤10 s, surface mounted on FR-4, 1 sq in pad, 1oz Cu 2
Junction-to-Ambient Thermal Resistance (note a), dual operation RθJA 118 148 °C/W steady state, surface mounted on FR-4, 1 sq in pad, 1oz Cu 2
Junction-to-Ambient Thermal Resistance (note b), dual operation RθJA 96 118 °C/W t≤10 s, surface mounted on FR-4, minimum pad, 1oz Cu 2
Junction-to-Ambient Thermal Resistance (note b), dual operation RθJA 138 180 °C/W steady state, surface mounted on FR-4, minimum pad, 1oz Cu 2
Junction-to-Case Thermal Resistance, dual operation RθJC 66 81 °C/W steady state 2

CAD (KiCad official)

  • Symbol: FH8810BT6
  • Footprint: Package_SO:TSSOP-8_3x3mm_P0.65mm
  • 3D model: TSSOP-8 (KiCad packages3D, STEP)
  • 3D model files: fh8810bt6-etched.step / fh8810bt6-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); fh8810bt6.step / fh8810bt6.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: XIN FEI HONG datasheet (7 pp, sha256 3a622d615c03b9a4, retrieved 2026-10-19, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF