component
ZXMHC10A07T8TA
Public Made by Adomby adom
Diodes Incorporated MOSFETs, SOT-223-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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Contents
README
markdownZXMHC10A07T8TA
Diodes Incorporated · MOSFETs · SOT-223-8
ZXMHC10A07T8TA from Diodes Incorporated, in a SOT-223-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G3 | input | Gate of P-channel MOSFET 3 (pin 1 marked on package), gate-source voltage limit ±20V. |
| 2 | S2/S3 | passive | Common source connection of MOSFET 2 and MOSFET 3 (internal schematic shows S2 and S3 as the low-side bottom terminals). |
| 3 | G2 | input | Gate of MOSFET 2, gate-source voltage limit ±20V. |
| 4 | G1 | input | Gate of MOSFET 1, gate-source voltage limit ±20V. |
| 5 | D1/D2 | passive | Common drain connection of MOSFET 1 and MOSFET 2 (left half-bridge output); VDSS 100V for N-channel / -100V for P-channel. |
| 6 | S1/S4 | passive | Common source connection of MOSFET 1 and MOSFET 4 (top terminals in the internal schematic). |
| 7 | D3/D4 | passive | Common drain connection of MOSFET 3 and MOSFET 4 (right half-bridge output); VDSS 100V for N-channel / -100V for P-channel. |
| 8 | G4 | input | Gate of MOSFET 4, gate-source voltage limit ±20V. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Diodes Incorporated |
| Package | SOT-223-8 |
| Category | Triode/MOS Tube/Transistor |
| Pins | 8 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| N-ch Drain-Source Voltage | VDSS | 100 | V | TA=+25°C | 2 | ||
| P-ch Drain-Source Voltage | VDSS | -100 | V | TA=+25°C | 2 | ||
| N-ch Gate-Source Voltage | VGSS | -20 | 20 | V | TA=+25°C | 2 | |
| P-ch Gate-Source Voltage | VGSS | -20 | 20 | V | TA=+25°C | 2 | |
| N-ch Continuous Drain Current | ID | 1.1 | A | VGS=10V, steady state, TA=+25°C (Note 6) | 2 | ||
| P-ch Continuous Drain Current | ID | -0.9 | A | VGS=10V, steady state, TA=+25°C (Note 6) | 2 | ||
| N-ch Maximum Body Diode Forward Current | IS | 2.3 | A | Note 6 | 2 | ||
| P-ch Maximum Body Diode Forward Current | IS | -2.2 | A | Note 6 | 2 | ||
| N-ch Pulsed Drain Current | IDM | 5.2 | A | Note 7 | 2 | ||
| P-ch Pulsed Drain Current | IDM | -4.5 | A | Note 7 | 2 | ||
| N-ch Pulsed Source Current | ISM | 5.2 | A | Note 7 | 2 | ||
| P-ch Pulsed Source Current | ISM | -4.5 | A | Note 7 | 2 | ||
| Total Power Dissipation | PD | 1.3 | W | TA=+25°C (Note 5), one active die | 2 | ||
| Linear Derating Factor | 10.4 | mW/°C | TA=+25°C (Note 5) | 2 | |||
| Thermal Resistance, Junction to Ambient | RθJA | 94.5 | °C/W | Steady state (Note 5) | 2 | ||
| Thermal Resistance, Junction to Ambient | RθJA | 73.3 | °C/W | Steady state (Note 6) | 2 | ||
| Operating and Storage Temperature Range | TJ, TSTG | -55 | 150 | °C | 2 | ||
| N-ch Drain-Source Breakdown Voltage | BVDSS | 100 | V | VGS = 0V, ID = 250μA | 3 | ||
| N-ch Zero Gate Voltage Drain Current | IDSS | 1 | μA | VDS = 100V, VGS = 0V | 3 | ||
| N-ch Gate-Source Leakage | IGSS | 100 | nA | VGS = ±20V, VDS = 0V | 3 | ||
| N-ch Gate Threshold Voltage | VGS(TH) | 2 | 4 | V | VDS = VGS, ID = 250μA | 3 | |
| N-ch Static Drain-Source On-Resistance | RDS(ON) | 0.7 | Ω | VGS = 10V, ID = 1.5A | 3 | ||
| N-ch Static Drain-Source On-Resistance | RDS(ON) | 0.9 | Ω | VGS = 6.0V, ID = 1.0A | 3 | ||
| N-ch Diode Forward Voltage | VSD | 0.95 | V | VGS = 0V, IS = 1.5A | 3 | ||
| P-ch Drain-Source Breakdown Voltage | BVDSS | -100 | V | VGS = 0V, ID = -250μA | 3 | ||
| P-ch Zero Gate Voltage Drain Current | IDSS | -1 | μA | VDS = -100V, VGS = 0V | 3 | ||
| P-ch Gate-Source Leakage | IGSS | 100 | nA | VGS = ±20V, VDS = 0V | 3 | ||
| P-ch Gate Threshold Voltage | VGS(TH) | -2 | -4 | V | VDS = VGS, ID = -250μA | 3 | |
| P-ch Static Drain-Source On-Resistance | RDS(ON) | 1 | Ω | VGS = -10V, ID = -0.6A | 3 | ||
| P-ch Static Drain-Source On-Resistance | RDS(ON) | 1.45 | Ω | VGS = -6.0V, ID = -0.5A | 3 | ||
| P-ch Diode Forward Voltage | VSD | -0.85 | -0.95 | V | VGS = 0V, IS = -0.75A | 3 | |
| N-ch Forward Transfer Admittance | gfs | 1.6 | S | VDS = 15V, ID = 1.0A | 3 | ||
| P-ch Forward Transfer Admittance | gfs | 1.2 | S | VDS = -15V, ID = -0.6A | 3 | ||
| N-ch Input Capacitance | Ciss | 138 | pF | VDS = 60V, VGS = 0V, f = 1MHz | 3 | ||
| P-ch Input Capacitance | Ciss | 141 | pF | VDS = -50V, VGS = 0V, f = 1MHz | 3 | ||
| N-ch Total Gate Charge | Qg | 2.9 | nC | VDS = 50V, ID = 1.0A, VGS = 10V | 3 | ||
| P-ch Total Gate Charge | Qg | 3.5 | nC | VGS = -10V, VDS = -50V, ID = -0.6A | 3 |
Materials and finish
As the datasheet states them (page.json metadata.appearance; the 3D model's colours follow it).
| Part | Material | Colour / plating | Datasheet says | Page |
|---|---|---|---|---|
| contacts | Copper | tin | Terminal Connections Indicator: See Diagram Terminals: Finish Matte Tin Annealed over Copper Leadframe; | 1 |
CAD (KiCad official)
- Symbol:
ZXMHC10A07T8TA - Footprint:
Package_TO_SOT_SMD:SOT-223-8 - 3D model: SOT-223-8 (KiCad packages3D, STEP)
- 3D model files:
zxmhc10a07t8ta-etched.step/zxmhc10a07t8ta-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);zxmhc10a07t8ta.step/zxmhc10a07t8ta.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Diodes Incorporated datasheet (10 pp, sha256
1e6de7b727252313, retrieved 2026-10-26, tier: manufacturer) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).