component
2SB1188SQ-Q
Public Made by Adomby adom
PJSEMI Bipolar (BJT), SOT-89. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdown2SB1188SQ-Q
PJSEMI · Bipolar (BJT) · SOT-89
2SB1188SQ-Q from PJSEMI, in a SOT-89. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | Base | input | Base terminal of the PNP transistor; the Q current-gain group is specified as hFE 120 to 270 at -VCE = 3 V, -IC = 500 mA. |
| 2 | Collector | passive | Collector terminal; ratings are -VCBO 40 V, -VCEO 32 V, -IC 2 A, and collector power dissipation PC 0.5 W. |
| 3 | Emitter | passive | Emitter terminal; the emitter-base rating is -VEBO 5 V, and the junction temperature limit is Tj 150 ℃. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | PJSEMI |
| Package | SOT-89 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Collector Emitter Saturation Voltage | -VCE(sat) | 0.8 | V | at -IC = 2 A, -IB = 200 mA | 1 | ||
| DC Current Gain (Current Gain Group P) | hFE | 82 | 180 | at -VCE = 3 V, -IC = 500 mA | 1 | ||
| DC Current Gain (Current Gain Group Q) | hFE | 120 | 270 | at -VCE = 3 V, -IC = 500 mA | 1 | ||
| DC Current Gain (Current Gain Group R) | hFE | 180 | 390 | at -VCE = 3 V, -IC = 500 mA | 1 | ||
| Collector Base Breakdown Voltage | -V(BR)CBO | 40 | V | at -IC = 50 µA | 1 | ||
| Collector Emitter Breakdown Voltage | -V(BR)CEO | 32 | V | at -IC = 1 mA | 1 | ||
| Emitter Base Breakdown Voltage | -V(BR)EBO | 5 | V | at -IE = 50 µA | 1 | ||
| Collector Base Cutoff Current | -ICBO | 1 | μA | at -VCB = 20 V | 1 | ||
| Emitter Base Cutoff Current | -IEBO | 1 | μA | at -VEB = 4 V | 1 | ||
| Collector Base Voltage | -VCBO | 40 | V | Ta = 25℃ | 1 | ||
| Collector Emitter Voltage | -VCEO | 32 | V | Ta = 25℃ | 1 | ||
| Emitter Base Voltage | -VEBO | 5 | V | Ta = 25℃ | 1 | ||
| Collector Current | -IC | 2 | A | Ta = 25℃ | 1 | ||
| Collector Power Dissipation | PC | 0.5 | W | Ta = 25℃ | 1 | ||
| Junction Temperature | Tj | 150 | ℃ | Ta = 25℃ | 1 | ||
| Storage Temperature Range | Tstg | -55 | 150 | ℃ | 1 |
CAD (KiCad official)
- Symbol:
2SB1188SQ-Q - Footprint:
Package_TO_SOT_SMD:SOT-89-3 - 3D model: SOT-89 (KiCad packages3D, STEP)
- 3D model files:
2sb1188sq-q-etched.step/2sb1188sq-q-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);2sb1188sq-q.step/2sb1188sq-q.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: PJSEMI datasheet (3 pp, sha256
014b4f0b08042a6f, retrieved 2026-10-18, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).