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FMB2907A

Public Made by Adom

by adom

onsemi Bipolar (BJT), TSOT-23-6. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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Datasheet

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Contents

README

markdown

FMB2907A

onsemi · Bipolar (BJT) · TSOT-23-6

FMB2907A from onsemi, in a TSOT-23-6. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 B1 passive Base of PNP transistor 1 (pin #1 marked by dot); Vebo max -5.0 V.
2 E2 passive Emitter of PNP transistor 2; Vebo max -5.0 V.
3 B2 passive Base of PNP transistor 2; Vebo max -5.0 V.
4 C2 passive Collector of PNP transistor 2; Vceo -60 V, continuous collector current -600 mA max.
5 E1 passive Emitter of PNP transistor 1; Vebo max -5.0 V.
6 C1 passive Collector of PNP transistor 1; Vceo -60 V, continuous collector current -600 mA max.

Key specifications

Parameter Value
Manufacturer onsemi
Package TSOT-23-6
Category Transistors/Thyristors
Pins 6

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Collector-Emitter Breakdown Voltage V(BR)CEO -60 V IC = -10 mA, IB = 0 4
Collector-Base Breakdown Voltage V(BR)CBO -60 V IC = -10 μA, IE = 0 4
Emitter-Base Breakdown Voltage V(BR)EBO -5 V IE = -10 μA, IC = 0 4
Base Cut-Off Current IBL -50 nA VCE = -30 V, VEB = -0.5 V 4
Collector Cut-Off Current ICEX -50 nA VCE = -30 V, VEB = -0.5 V 4
Collector Cut-Off Current ICBO -0.02 μA VCB = -50 V, IE = 0 4
Collector Cut-Off Current ICBO -20 μA VCB = -50 V, IE = 0, TA = 125°C 4
DC Current Gain hFE 75 IC = -0.1 mA, VCE = -10 V 4
DC Current Gain hFE 100 IC = -1.0 mA, VCE = -10 V 4
DC Current Gain hFE 100 300 IC = -150 mA, VCE = -10 V (pulsed) 4
DC Current Gain hFE 50 IC = -500 mA, VCE = -10 V (pulsed) 4
Collector-Emitter Saturation Voltage VCE(sat) -0.4 V IC = -150 mA, IB = -15 mA 4
Collector-Emitter Saturation Voltage VCE(sat) -1.6 V IC = -500 mA, IB = -50 mA 4
Base-Emitter Saturation Voltage VBE(sat) -1.3 V IC = -150 mA, IB = -15 mA (pulsed) 4
Base-Emitter Saturation Voltage VBE(sat) -2.6 V IC = -500 mA, IB = -50 mA 4
Current Gain-Bandwidth Product fT 250 MHz IC = -50 mA, VCE = -20 V, f = 100 MHz 4
Output Capacitance Cob 6 pF VCB = -10 V, IE = 0, f = 100 kHz 4
Input Capacitance Cib 12 pF VEB = -2.0 V, IC = 0, f = 100 kHz 4
Turn-On Time ton 30 ns VCC = -30 V, IC = -150 mA, IB1 = -15 mA 4
Delay Time td 8 ns VCC = -30 V, IC = -150 mA, IB1 = -15 mA 4
Rise Time tr 20 ns VCC = -30 V, IC = -150 mA, IB1 = -15 mA 4
Turn-Off Time toff 80 ns VCC = -6.0 V, IC = -150 mA, IB1 = IB2 = -15 mA 4
Storage Time ts 60 ns VCC = -6.0 V, IC = -150 mA, IB1 = IB2 = -15 mA 4
Fall Time tf 20 ns VCC = -6.0 V, IC = -150 mA, IB1 = IB2 = -15 mA 4
Collector-Emitter Voltage VCEO -60 V 3
Collector-Base Voltage VCBO -60 V 3
Emitter-Base Voltage VEBO -5 V 3
Collector Current - Continuous IC -600 mA 3
Junction and Storage Temperature TJ, TSTG -55 150 °C 3
Total Device Dissipation (FMB2907A column) PD 700 mW 3
Thermal Resistance, Junction to Ambient (FMB2907A column) RθJA 180 °C/W 3

CAD (KiCad official)

  • Symbol: FMB2907A
  • Footprint: Package_TO_SOT_SMD:TSOT-23-6
  • 3D model: TSOT-23-6 (KiCad packages3D, STEP)
  • 3D model files: fmb2907a-etched.step / fmb2907a-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); fmb2907a.step / fmb2907a.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: onsemi datasheet (12 pp, sha256 a63ca0200cc7a19a, retrieved 2026-10-18, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF