BC856BW-QX from Nexperia, in a SOT-323. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin	Name	Type	Function
1	B	input	Base terminal of the BC856BW-Q PNP transistor, as listed in the pinning table for the SOT323 package.
2	E	passive	Emitter terminal of the BC856BW-Q PNP transistor, as listed in the pinning table for the SOT323 package.
3	C	passive	Collector terminal of the BC856BW-Q PNP transistor, rated for a maximum collector current of -100 mA (IC).

Key specifications

Parameter	Value
Manufacturer	Nexperia
Package	SOT-323
Category	Transistors/Thyristors
Pins	3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter	Symbol	Min	Typ	Max	Unit	Conditions	Page
Collector-base voltage	VCBO			-80	V	open emitter	3
Collector-emitter voltage	VCEO			-65	V	open base	3
Emitter-base voltage	VEBO			-5	V	open collector	3
Collector current	IC			-100	mA		3
Peak collector current	ICM			-200	mA		3
Peak base current	IBM			-200	mA		3
Total power dissipation	Ptot			200	mW	Tamb ≤ 25 °C; device mounted on FR4 PCB, single-sided, 35 μm copper, tin-plated, standard footprint	3
Junction temperature	Tj			150	°C		3
Ambient temperature	Tamb	-65		150	°C		3
Storage temperature	Tstg	-65		150	°C		3
Collector-base breakdown voltage	V(BR)CBO	-80			V	IC = -100 µA; IE = 0 A	5
Collector-emitter breakdown voltage	V(BR)CEO	-65			V	IC = -2 mA; IB = 0 A	5
Emitter-base breakdown voltage	V(BR)EBO	-5			V	IC = 0 A; IE = -100 µA	5
Collector-base cut-off current	ICBO		-1	-15	nA	VCB = -30 V; IE = 0 A	5
Collector-base cut-off current	ICBO			-4	µA	VCB = -30 V; IE = 0 A; Tj = 150 °C	5
Emitter-base cut-off current	IEBO			-100	nA	VEB = -5 V; IC = 0 A	5
DC current gain	hFE	220		475		VCE = 5 V; IC = 2 mA	2
Collector-emitter saturation voltage	VCEsat		-75	-300	mV	IC = -10 mA; IB = -0.5 mA	5
Collector-emitter saturation voltage	VCEsat		-250	-600	mV	IC = -100 mA; IB = -5 mA; pulsed; tp ≤ 300 μs; δ ≤ 0.02	5
Base-emitter voltage	VBE	-600	-650	-750	mV	VCE = -5 V; IC = -2 mA	5
Base-emitter voltage	VBE			-820	mV	VCE = -5 V; IC = -10 mA	5
Transition frequency	fT	100			MHz	VCE = -5 V; IC = -10 mA; f = 100 MHz	5
Noise figure	NF		2	10	dB	IC = -200 µA; VCE = -5 V; RS = 2 kΩ; f = 1 kHz; B = 200 Hz	5
Thermal resistance from junction to ambient	Rth(j-a)			625	K/W	in free air; device mounted on FR4 PCB, single-sided, 35 µm copper, tin-plated, standard footprint	4
Base-emitter saturation voltage	VBEsat		-700		mV	IC = -10 mA; IB = -0.5 mA	5
Base-emitter saturation voltage	VBEsat		-850		mV	IC = -100 mA; IB = -5 mA	5
Collector capacitance	Cc		3		pF	VCB = -10 V; IE = ie = 0 A; f = 1 MHz	5
Collector capacitance	Ce		12		pF	VEB = -5 V; IC = ic = 0 A; f = 1 MHz	5

CAD (KiCad official)

Symbol: BC856BW-QX
Footprint: Package_TO_SOT_SMD:SOT-323_SC-70
3D model: SOT-323 (KiCad packages3D, STEP)
3D model files: bc856bw-qx-etched.step / bc856bw-qx-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); bc856bw-qx.step / bc856bw-qx.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

Datasheet: Nexperia datasheet (13 pp, sha256 4832a02efea5b89a, retrieved 2026-11-04, tier: manufacturer)
Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF

BC856BW-QX

Verified BC856BW-QX

Verification log 1 record

3D Model

Symbol & Footprint

Schematic Symbol

PCB Footprint

Datasheet

README