component
IRF640
Public Made by Adomby adom
GOODWORK MOSFETs, TO-220-3L. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownIRF640
GOODWORK · MOSFETs · TO-220-3L
IRF640 from GOODWORK, in a TO-220-3L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate terminal of the N-channel MOSFET; gate-source voltage VGS is rated at ±20 V. |
| 2 | D | passive | Drain terminal of the N-channel MOSFET; drain-source breakdown voltage V(BR)DSS is 200 V minimum and continuous drain current is 18 A at VGS = 10 V. |
| 3 | S | passive | Source terminal of the N-channel MOSFET, serving as the reference for the gate-source voltage VGS rated at ±20 V. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | GOODWORK |
| Package | TO-220-3L |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-source breakdown voltage | V(BR)DSS | 200 | V | VGS=0V,ID=250µA | 2 | ||
| Gate-threshold voltage | V (GS)th | 2 | 4 | V | VDS=VGS, ID=250µA | 2 | |
| Gate-body leakage | lGSS | -100 | 100 | nA | VDS=0V, VGS=±20V | 2 | |
| Zero gate voltage drain current | IDSS | 25 | µA | VDS=200V, VGS=0V | 2 | ||
| Drain-source on-resistance | RDS(Rn) | 0.18 | Ω | VGS=10V, ID=11A | 2 | ||
| Forward transconductance | gfs | 6.7 | S | VDS=50V, ID=11A | 2 | ||
| Diode forward voltage | VSD | 2 | V | IS=18A, VGS=0V | 2 | ||
| Gate-source voltage | VGS | -20 | 20 | V | 1 | ||
| Continuous drain current | ID | 18 | A | VGS @ 10 V | 1 | ||
| Power dissipation | PD | 2 | W | 1 | |||
| Single pulse avalanche energy | EAS | 580 | mJ | note 1 | 1 | ||
| Junction temperature | TJ | 150 | ℃ | 1 | |||
| Storage temperature | TSTG | -55 | 150 | ℃ | 1 | ||
| Thermal resistance from junction to ambient | RθJA | 62.5 | ℃/W | 1 | |||
| Linear derating factor | 1 | W/℃ | 1 | ||||
| Input capacitance | Ciss | 1300 | pF | VDS=25V, VGS=0V,f=1MHz | 2 | ||
| Output capacitance | Coss | 400 | pF | VDS=25V, VGS=0V,f=1MHz | 2 | ||
| Reverse transfer capacitance | Crss | 120 | pF | VDS=25V, VGS=0V,f=1MHz | 2 | ||
| Turn-on time | td(Rn) | 14 | ns | VDD=100V,RD=5.4Ω, ID=18A, RG=9.1Ω | 2 | ||
| Rise time | tr | 51 | ns | VDD=100V,RD=5.4Ω, ID=18A, RG=9.1Ω | 2 | ||
| Turn-off time | td(off) | 45 | ns | VDD=100V,RD=5.4Ω, ID=18A, RG=9.1Ω | 2 | ||
| Fall time | tf | 36 | ns | VDD=100V,RD=5.4Ω, ID=18A, RG=9.1Ω | 2 |
CAD (KiCad official)
- Symbol:
IRF640 - Footprint:
Package_TO_SOT_THT:TO-220-3_Vertical - 3D model: TO-220-3L (KiCad packages3D, STEP)
- 3D model files:
irf640-etched.step/irf640-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);irf640.step/irf640.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: GOODWORK datasheet (5 pp, sha256
318bd4b43b32b76c, retrieved 2026-10-27, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusoff(skipped (clean text read)), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).