component

MMBT8099LT1G

Public Made by Adom

by adom

onsemi Bipolar (BJT), SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

componenttransistors-thyristorsmmbt8099lt1gfactory-2.0.0extractor-text
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3D Model

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Symbol & Footprint

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Datasheet

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Contents

README

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MMBT8099LT1G

onsemi · Bipolar (BJT) · SOT-23

MMBT8099LT1G from onsemi, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 BASE passive Base terminal of the NPN amplifier transistor; the datasheet gives the emitter-base limit of VEBO 6.0 Vdc and the device is rated for 500 mAdc continuous collector current.
2 EMITTER passive Emitter terminal of the NPN amplifier transistor, with the emitter-base breakdown voltage V(BR)EBO of 6.0 Vdc minimum and the 500 mAdc continuous collector current rating referenced to this device.
3 COLLECTOR passive Collector terminal of the NPN amplifier transistor, rated for VCEO of 80 Vdc and VCBO of 80 Vdc with a continuous collector current of 500 mAdc.

Key specifications

Parameter Value
Manufacturer onsemi
Package SOT-23
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Collector-Emitter Breakdown Voltage V(BR)CEO 80 Vdc IC = 10 mAdc, IB = 0 2
Collector-Base Breakdown Voltage V(BR)CBO 80 Vdc IC = 100 Adc, IE = 0 2
Emitter-Base Breakdown Voltage V(BR)EBO 6 Vdc IE = 10 Adc, IC = 0 2
Collector Cutoff Current ICES 0.1 Adc VCE = 60 Vdc, IB = 0 2
Emitter Cutoff Current IEBO 0.1 Adc VEB = 6.0 Vdc, IC = 0 2
DC Current Gain hFE 100 IC = 1.0 mAdc, VCE = 5.0 Vdc 2
DC Current Gain hFE 75 IC = 100 mAdc, VCE = 5.0 Vdc 2
Collector-Emitter Saturation Voltage VCE(sat) 0.4 Vdc IC = 100 mAdc, IB = 5.0 mAdc 2
Collector-Emitter Saturation Voltage VCE(sat) 0.3 Vdc IC = 100 mAdc, IB = 10 mAdc 2
Base-Emitter On Voltage VBE(on) 0.6 Vdc IC = 1.0 mAdc, VCE = 5.0 Vdc 2
Base-Emitter On Voltage VBE(on) 0.8 Vdc IC = 10 mAdc, VCE = 5.0 Vdc 2
Current-Gain - Bandwidth Product fT 150 MHz IC = 10 mAdc, VCE = 5.0 Vdc, f = 100 MHz 2
Output Capacitance Cobo 6 pF VCB = 5.0 Vdc, IE = 0, f = 1.0 MHz 2
Input Capacitance Cibo 25 pF VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz 2
Collector-Emitter Voltage VCEO 80 Vdc 1
Collector-Base Voltage VCBO 80 Vdc 1
Emitter-Base Voltage VEBO 6 Vdc 1
Collector Current - Continuous IC 500 mAdc 1
Total Device Dissipation FR-5 Board PD 225 mW FR-5 board (Note 1), TA = 25°C 1
Thermal Resistance, Junction-to-Ambient FR-5 Board RJA 556 °C/W FR-5 board (Note 1) 1
Total Device Dissipation Alumina Substrate PD 300 mW Alumina substrate (Note 2), TA = 25°C 1
Thermal Resistance, Junction-to-Ambient Alumina Substrate RJA 417 °C/W Alumina substrate (Note 2) 1
Junction and Storage Temperature Range TJ, Tstg -55 150 °C 1

CAD (KiCad official)

  • Symbol: MMBT8099LT1G
  • Footprint: Package_TO_SOT_SMD:SOT-23
  • 3D model: SOT-23 (KiCad packages3D, STEP)
  • 3D model files: mmbt8099lt1g-etched.step / mmbt8099lt1g-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); mmbt8099lt1g.step / mmbt8099lt1g.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: onsemi datasheet (6 pp, sha256 92f311fffc589ab7, retrieved 2026-10-18, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF