component
PBSS4130T
Public Made by Adomby adom
Nexperia Bipolar (BJT), SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
Open in new tab ↗
Loads when you scroll to it. Unloads after 5 minutes in the background.
Symbol & Footprint
Schematic Symbol
Open full view ↗Loads when you scroll to it. Unloads after 5 minutes in the background.
PCB Footprint
Open full view ↗Loads when you scroll to it. Unloads after 5 minutes in the background.
Datasheet
Open in new tab ↗Loads when you scroll to it. Unloads after 5 minutes in the background.
README
markdownPBSS4130T
Nexperia · Bipolar (BJT) · SOT-23
PBSS4130T from Nexperia, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | B | passive | Base terminal; the datasheet limits peak base current IBM to 300 mA (single pulse, tp ≤ 1 ms) and emitter-base voltage VEBO to 5 V. |
| 2 | E | passive | Emitter terminal; the datasheet limits emitter-base voltage VEBO to 5 V (open collector). |
| 3 | C | passive | Collector terminal; the datasheet limits collector current IC to 1 A, peak collector current ICM to 3 A, VCBO to 40 V and VCEO to 30 V. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Nexperia |
| Package | SOT-23 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Collector-base voltage | VCBO | 40 | V | open emitter | 2 | ||
| Collector-emitter voltage | VCEO | 30 | V | open base | 2 | ||
| Emitter-base voltage | VEBO | 5 | V | open collector | 2 | ||
| Collector current | IC | 1 | A | 2 | |||
| Peak collector current | ICM | 3 | A | 2 | |||
| Peak base current | IBM | 300 | mA | single pulse; tp ≤ 1 ms | 2 | ||
| Total power dissipation | Ptot | 300 | mW | Tamb ≤ 25 °C; [1] FR4 PCB, single-sided copper, standard footprint | 2 | ||
| Total power dissipation | Ptot | 480 | mW | Tamb ≤ 25 °C; [2] FR4 PCB, single-sided copper, mounting pad for collector 1 cm² | 2 | ||
| Junction temperature | Tj | 150 | °C | 2 | |||
| Ambient temperature | Tamb | -65 | 150 | °C | 2 | ||
| Storage temperature | Tstg | -65 | 150 | °C | 2 | ||
| Thermal resistance from junction to ambient | Rth(j-a) | 417 | K/W | in free air; [1] FR4 PCB, single-sided copper, standard footprint | 3 | ||
| Thermal resistance from junction to ambient | Rth(j-a) | 260 | K/W | in free air; [2] FR4 PCB, single-sided copper, mounting pad for collector 1 cm² | 3 | ||
| Collector-base cut-off current | ICBO | 100 | nA | VCB = 30 V; IE = 0 A; Tamb = 25 °C | 3 | ||
| Collector-base cut-off current | ICBO | 50 | µA | VCB = 30 V; IE = 0 A; Tj = 150 °C | 3 | ||
| Emitter-base cut-off current | IEBO | 100 | nA | VEB = 4 V; IC = 0 A; Tamb = 25 °C | 3 | ||
| DC current gain | hFE | 350 | 470 | VCE = 2 V; IC = 100 mA; Tamb = 25 °C | 3 | ||
| DC current gain | hFE | 300 | 450 | VCE = 2 V; IC = 500 mA; Tamb = 25 °C | 3 | ||
| DC current gain | hFE | 300 | 420 | VCE = 2 V; IC = 1 A; Tamb = 25 °C | 3 | ||
| Collector-emitter saturation voltage | VCEsat | 90 | mV | IC = 100 mA; IB = 1 mA; Tamb = 25 °C | 3 | ||
| Collector-emitter saturation voltage | VCEsat | 120 | mV | IC = 500 mA; IB = 50 mA; Tamb = 25 °C | 3 | ||
| Collector-emitter saturation voltage | VCEsat | 220 | mV | IC = 750 mA; IB = 15 mA; Tamb = 25 °C | 3 | ||
| Collector-emitter saturation voltage | VCEsat | 270 | mV | IC = 1 A; IB = 50 mA; pulsed; tp ≤ 300 µs; δ ≤ 0.02; Tamb = 25 °C | 3 | ||
| Collector-emitter saturation resistance | RCEsat | 220 | mΩ | IC = 500 mA; IB = 50 mA; pulsed; tp ≤ 300 µs; δ ≤ 0.02; Tamb = 25 °C | 3 | ||
| Collector-emitter saturation resistance | RCEsat | 240 | mΩ | IC = 500 A; IB = 50 A; tp ≤ 300 µs; δ ≤ 0.02 | 3 | ||
| Base-emitter saturation voltage | VBEsat | 1.1 | V | IC = 1 A; IB = 100 mA; pulsed; tp ≤ 300 µs; δ ≤ 0.02; Tamb = 25 °C | 3 | ||
| Base-emitter turn-on voltage | VBEon | 0.75 | V | VCE = 2 V; IC = 100 mA; Tamb = 25 °C | 3 | ||
| Transition frequency | fT | 100 | MHz | VCE = 10 V; IC = 100 mA; f = 100 MHz; Tamb = 25 °C | 3 | ||
| Collector capacitance | Cc | 20 | pF | VCB = 10 V; IE = 0 A; ie = 0 A; f = 1 MHz; Tamb = 25 °C | 3 |
CAD (KiCad official)
- Symbol:
PBSS4130T - Footprint:
Package_TO_SOT_SMD:SOT-23 - 3D model: SOT-23 (KiCad packages3D, STEP)
- 3D model files:
pbss4130t-etched.step/pbss4130t-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);pbss4130t.step/pbss4130t.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Nexperia datasheet (8 pp, sha256
6fe392a7fba2a806, retrieved 2026-10-19, tier: manufacturer) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).