component
IRF840PBF
Public Made by Adomby adom
Vishay Intertech MOSFETs, TO-220AB. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownIRF840PBF
Vishay Intertech · MOSFETs · TO-220AB
IRF840PBF from Vishay Intertech, in a TO-220AB. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate terminal; VGS is rated at ±20 V maximum and VGS(th) is 2.0 V to 4.0 V at ID = 250 µA. |
| 2 | D | passive | Drain terminal; VDS is rated at 500 V maximum and continuous drain current ID is 8.0 A at TC = 25 °C (RthJC drain-to-case 1.0 °C/W max). |
| 3 | S | passive | Source terminal; the integral body diode has a continuous source-drain current IS of 8.0 A maximum. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Vishay Intertech |
| Package | TO-220AB |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | V(BR)DSS | 500 | V | VGS = 0 V, ID = 250 μA | 2 | ||
| Gate-Source Threshold Voltage | VGS(th) | 2 | 4 | V | VDS = VGS, ID = 250 μA | 2 | |
| Gate-Source Leakage | IGSS | -100 | 100 | nA | VGS = ± 20 V | 2 | |
| Zero Gate Voltage Drain Current | IDSS | 25 | μA | VDS = 500 V, VGS = 0 V | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | 250 | μA | VDS = 400 V, VGS = 0 V, TJ = 125 °C | 2 | ||
| Drain-Source On-State Resistance | RDS(on) | 0.85 | Ω | VGS = 10 V, ID = 4.8 A (note b) | 2 | ||
| Forward Transconductance | gfs | 4.9 | S | VDS = 50 V, ID = 4.8 A (note b) | 2 | ||
| Gate Input Resistance | Rg | 0.6 | 2.8 | Ω | f = 1 MHz, open drain | 2 | |
| Total Gate Charge | Qg | 63 | nC | VGS = 10 V, ID = 8 A, VDS = 400 V, see fig. 6 and 13 (note b) | 2 | ||
| Gate-Source Charge | Qgs | 9.3 | nC | 2 | |||
| Gate-Drain Charge | Qgd | 32 | nC | 2 | |||
| Continuous Source-Drain Diode Current | IS | 8 | A | MOSFET symbol showing the integral reverse p-n junction diode | 2 | ||
| Pulsed Diode Forward Current | ISM | 32 | A | Note a: repetitive rating; pulse width limited by maximum junction temperature (see fig. 11) | 2 | ||
| Body Diode Voltage | VSD | 2 | V | TJ = 25 °C, IS = 8 A, VGS = 0 V (note b) | 2 | ||
| Body Diode Reverse Recovery Time | trr | 460 | 970 | ns | TJ = 25 °C, IF = 8 A, dI/dt = 100 A/μs (note b) | 2 | |
| Body Diode Reverse Recovery Charge | Qrr | 4.2 | 8.9 | μC | 2 | ||
| Drain-Source Voltage | VDS | 500 | V | 1 | |||
| Gate-Source Voltage | VGS | -20 | 20 | V | 1 | ||
| Continuous Drain Current | ID | 8 | A | VGS at 10 V, TC = 25 °C | 1 | ||
| Continuous Drain Current | ID | 5.1 | A | VGS at 10 V, TC = 100 °C | 1 | ||
| Pulsed Drain Current | IDM | 32 | A | Note a: repetitive rating; pulse width limited by maximum junction temperature (see fig. 11) | 1 | ||
| Linear Derating Factor | 1 | W/°C | 1 | ||||
| Single Pulse Avalanche Energy | EAS | 510 | mJ | Note b: VDD = 50 V, starting TJ = 25 °C, L = 14 mH, Rg = 25, IAS = 8.0 A | 1 | ||
| Repetitive Avalanche Current | IAR | 8 | A | Note a: repetitive rating | 1 | ||
| Repetitive Avalanche Energy | EAR | 13 | mJ | Note a: repetitive rating | 1 | ||
| Maximum Power Dissipation | PD | 125 | W | TC = 25 °C | 1 | ||
| Peak Diode Recovery dV/dt | dV/dt | 3.5 | V/ns | Note c: ISD 8.0 A, dI/dt 100 A/μs, VDD VDS, TJ 150 °C | 1 | ||
| Operating Junction and Storage Temperature Range | TJ, Tstg | -55 | 150 | °C | 1 | ||
| Soldering Recommendations (Peak temperature) | 300 | °C | for 10 s, note d: 1.6 mm from case | 1 | |||
| Mounting Torque | 10 | lbf · in | 6-32 or M3 screw | 1 | |||
| Mounting Torque | 1.1 | N · m | 6-32 or M3 screw | 1 | |||
| Maximum Junction-to-Ambient | RthJA | 62 | °C/W | 2 | |||
| Case-to-Sink, Flat, Greased Surface | RthCS | 0.5 | °C/W | 2 | |||
| Maximum Junction-to-Case (Drain) | RthJC | 1 | °C/W | 2 |
CAD (KiCad official)
- Symbol:
IRF840PBF - Footprint:
Package_TO_SOT_THT:TO-220-3_Vertical - 3D model: TO-220AB (KiCad packages3D, STEP)
- 3D model files:
irf840pbf-etched.step/irf840pbf-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);irf840pbf.step/irf840pbf.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Vishay Intertech datasheet (8 pp, sha256
dc4d322c72f43d1f, retrieved 2026-10-09, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).