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Contents

README

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IRFP460PBF

Tokmas · MOSFETs · TO-247-3

IRFP460PBF from Tokmas, in a TO-247-3. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate; gate-to-source voltage is rated at ±30 V maximum with a threshold of 2.0 V min to 4.0 V max at VDS=VGS, ID=250µA.
2 D passive Drain; drain-to-source voltage is rated at 500 V with 25 A continuous and 100 A pulsed drain current.
3 S passive Source; the body diode carries 25 A continuous source current and 100 A pulsed, with a forward voltage of 1.5 V maximum at 25 A.

Key specifications

Parameter Value
Manufacturer Tokmas
Package TO-247-3
Category Triode/MOS Tube/Transistor
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-to-Source Breakdown Voltage VDSS 500 V VGS=0V, ID=250µA 2
Drain to Source Leakage Current IDSS 1 µA VDS=500V, VGS=0V, Ta=25℃ 2
Drain to Source Leakage Current IDSS 100 µA VDS=400V, VGS=0V, Ta=125℃ 2
Gate to Source Forward Leakage IGSS(F) 100 nA VGS=+30V 2
Gate to Source Reverse Leakage IGSS(R) -100 nA VGS=-30V 2
Drain-to-Source On-Resistance RDS(ON) 166 190 mΩ VGS=10V, ID=12.5 A 2
Gate Threshold Voltage VGS(TH) 2 4 V VDS=VGS, ID=250µA 2
Source Current (Body Diode) ISD 25 A 3
Maximum Pulsed Current (Body Diode) ISM 100 A 3
Diode Forward Voltage VSD 1.5 V IS=25A, VGS=0V 3
Drain-to-Source Voltage VDSS 500 V TJ=+25℃ to +150℃ 1
Continuous Drain Current ID 25 A Tc=25℃ 1
Pulsed Drain Current IDM 100 A VGS=10V 1
Gate-to-Source Voltage VGS -30 30 V 1
Single Pulse Avalanche Energy EAS 1800 mJ 1
Avalanche Current IAS 8.8 A 1
Peak Diode Recovery dv/dt dv/dt 5 V/ns ISD=25A, di/dt<100A/μs, VDD<BVDSS, TJ=+150℃ 1
Power Dissipation PD 270 W Tc=25℃ 1
Derating Factor above 25°C 2.16 W/℃ 1
Operating Junction and Storage Temperature Range TJ, Tstg -55 150 ℃ 1
Maximum Temperature for Soldering TL 300 ℃ 1
Thermal Resistance, Junction-to-Case RθJC 0.46 ℃/W 2
Thermal Resistance, Junction-to-Ambient RθJA 40 ℃/W 2
Forward Transconductance gfs 25 S VDS=15V, ID=15A 2
Input Capacitance Ciss 4650 pF VGS=0V, VDS=25V, f=1.0MHz 2
Output Capacitance Coss 400 pF VGS=0V, VDS=25V, f=1.0MHz 2
Reverse Transfer Capacitance Crss 40 pF VGS=0V, VDS=25V, f=1.0MHz 2
Turn-on Delay Time td(ON) 50 ns ID=25A, VDD=250V, VGS=10V, Rg=25Ω 2
Rise Time tr 115 ns ID=25A, VDD=250V, VGS=10V, Rg=25Ω 2
Turn-Off Delay Time td(OFF) 301 ns ID=25A, VDD=250V, VGS=10V, Rg=25Ω 2
Fall Time tf 125 ns ID=25A, VDD=250V, VGS=10V, Rg=25Ω 2
Total Gate Charge Qg 85 nC ID=25A, VDD=250V, VGS=10V 2
Gate to Source Charge Qgs 14 nC ID=25A, VDD=250V, VGS=10V 2
Gate to Drain (Miller) Charge Qgd 37 nC ID=25A, VDD=250V, VGS=10V 2
Reverse Recovery Time trr 530 ns IS=25A, Tj=25℃, dIF/dt=100A/μs, VGS=0V 3
Reverse Recovery Charge Qrr 5.26 uC IS=25A, Tj=25℃, dIF/dt=100A/μs, VGS=0V 3

CAD (KiCad official)

  • Symbol: IRFP460PBF
  • Footprint: Package_TO_SOT_THT:TO-247-3_Vertical
  • 3D model: TO-247-3 (KiCad packages3D, STEP)
  • 3D model files: irfp460pbf-etched.step / irfp460pbf-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); irfp460pbf.step / irfp460pbf.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Tokmas datasheet (5 pp, sha256 f814d165e52035e3, retrieved 2026-10-31, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF