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MMBT3904FX

Public Made by Adom

by adom

Shenzhen JingYang Bipolar (BJT), SOT-523. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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Symbol & Footprint

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Datasheet

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Contents

README

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MMBT3904FX

Shenzhen JingYang · Bipolar (BJT) · SOT-523

MMBT3904FX from Shenzhen JingYang, in a SOT-523. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 BASE input Base of the NPN transistor; emitter-base voltage is rated at 6 V maximum (open collector).
2 EMITTER passive Emitter of the NPN transistor; DC collector current is limited to 200 mA.
3 COLLECTOR passive Collector of the NPN transistor; collector-emitter voltage is rated at 40 V (open base) and collector-base voltage at 60 V (open emitter).

Key specifications

Parameter Value
Manufacturer Shenzhen JingYang
Package SOT-523
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Collector-base voltage VCBO 60 V open emitter 1
Collector-emitter voltage VCEO 40 V open base 1
Emitter-base voltage VEBO 6 V open collector 1
Collector current (DC) IC 200 mA 1
Total power dissipation Ptot 200 mW Tamb≤25°C 1
Storage temperature Tstg -55 150 °C 1
Junction temperature Tj 150 °C 1
Operating ambient temperature Tamb -55 150 °C 1
Collector cut-off current ICBO 0.1 uA IE = 0; VCB = 60 V 2
Emitter cut-off current IEBO 0.1 uA IC = 0; VEB = 5 V 2
DC current gain hFE 100 VCE = 1 V; IC = 10mA 2
DC current gain hFE 60 VCE = 1 V; IC = 50mA 2
DC current gain hFE 30 VCE = 1 V; IC = 100mA 2
Collector-emitter saturation voltage VCE（sat） 200 mV IC = 10mA; IB = 1mA 2
Collector-emitter saturation voltage VCE（sat） 300 mV IC = 50mA; IB = 5mA 2
Base-emitter saturation voltage VBE（sat） 650 850 mV IC = 10mA; IB = 1mA 2
Base-emitter saturation voltage VBE（sat） 950 mV IC = 50mA; IB = 5mA 2
Transition frequency fT 300 MHz IC =10mA; VCE =20V; f =100MHz 2
Delay time td 35 ns VCC=3Vdc,VBE=-0.5Vdc 2
Rise time tr 35 ns IC=10mAdc,IB1=1mAdc 2
Storage time ts 200 ns VCC=3Vdc,IC=10mAdc 2
Fall time tf 50 ns IB1=IB2=1mAdc 2

CAD (KiCad official)

  • Symbol: MMBT3904FX
  • Footprint: Package_TO_SOT_SMD:SOT-523
  • 3D model: SOT-523, generated from the KiCad footprint (body from the F.Fab outline, terminals on the pads, 0.8 mm nominal SOT-523 height). Neither the vendor nor KiCad ships a 3D model for this package, so the dimensions are nominal, not the manufacturer's CAD (STEP)
  • 3D model files: mmbt3904fx-etched.step / mmbt3904fx-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); mmbt3904fx.step / mmbt3904fx.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Shenzhen JingYang datasheet (6 pp, sha256 bf70bfb7126a5af7, retrieved 2026-10-15, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF