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Contents

README

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BCM62B

Nexperia · Bipolar Transistors - BJT · SOT-143

BCM62B from Nexperia, in a SOT-143. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 C2/B1/B2 passive Collector of TR2 and base of both TR1 and TR2 (common node); TR2 is diode-connected for current-mirror use.
2 C1 passive Collector of TR1; limits VCEO -45 V, VCBO -50 V, IC max -100 mA per transistor.
3 E1 passive Emitter of TR1.
4 E2 passive Emitter of TR2; VEBS limit -5 V per transistor.

Key specifications

Parameter Value
Manufacturer Nexperia
Package SOT-143
Category Triode/MOS Tube/Transistor
Pins 4

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Collector-base voltage (open emitter) VCBO -50 V open emitter 3
Collector-emitter voltage (open base) VCEO -45 V open base 3
Emitter-base voltage (TR1) VEBS -5 V VCB = 0 V 3
Collector current IC -100 mA per transistor 3
Peak collector current ICM -200 mA single pulse; tp ≤ 1 ms 3
Total power dissipation (per transistor) Ptot 220 mW Tamb ≤ 25 °C 3
Total power dissipation (per device) Ptot 390 mW Tamb ≤ 25 °C 3
Junction temperature Tj 150 °C 3
Ambient temperature Tamb -65 150 °C 3
Storage temperature Tstg -65 150 °C 3
Thermal resistance junction to ambient (per transistor) Rth(j-a) 568 K/W in free air; device mounted on FR4 PCB 3
Thermal resistance junction to ambient (per device) Rth(j-a) 321 K/W in free air; device mounted on FR4 PCB 3
Collector-base cut-off current ICBO -15 nA VCB = −30 V; IE = 0 A 4
Collector-base cut-off current (Tj = 150 °C) ICBO -5 µA VCB = −30 V; IE = 0 A; Tj = 150 °C 4
Emitter-base cut-off current IEBO -100 nA VEB = −5 V; IC = 0 A 4
DC current gain hFE 100 - VCE = −5 V; IC = −100 µA 4
DC current gain hFE 200 290 450 - VCE = −5 V; IC = −2 mA 4
Collector-emitter saturation voltage VCEsat -50 -200 mV IC = −10 mA; IB = −0.5 mA 4
Collector-emitter saturation voltage VCEsat -200 -400 mV IC = −100 mA; IB = −5 mA 4
Base-emitter voltage VBE -600 -650 -700 mV VCE = −5 V; IC = −2 mA 4
Base-emitter voltage VBE -760 mV VCE = −5 V; IC = −10 mA 4
Collector capacitance Cc 2.2 pF VCB = −10 V; IE = ie = 0 A; f = 1 MHz 4
Transition frequency fT 100 175 MHz VCE = −5 V; IC = −10 mA; f = 100 MHz 4
Emitter-base voltage (TR2) VEBS 1.5 V VCB = 0 V; IE = 250 mA 5
Emitter-base voltage (TR2) VEBS 400 mV VCB = 0 V; IE = 10 µA 5
Current matching IC1/IE2 IC1/IE2 1 1.1 1.2 VCE1 = −5 V; IE2 = 0.5 mA; Tamb ≤ 25 °C 5
Current matching IC1/IE2 IC1/IE2 1.02 1.22 VCE1 = −5 V; IE2 = 0.5 mA; Tamb ≤ 150 °C 5
Current matching IC1/IE2 IC1/IE2 0.95 1.05 1.15 VCE1 = −3 V; IE2 = 0.5 mA; Tamb ≤ 25 °C 5
Current matching IC1/IE2 IC1/IE2 0.9 1 1.1 VCE1 = −1 V; IE2 = 0.5 mA; Tamb ≤ 25 °C 5

CAD (KiCad official)

  • Symbol: BCM62B
  • Footprint: Package_TO_SOT_SMD:SOT-143
  • 3D model: SOT-143 (KiCad packages3D, STEP)
  • 3D model files: bcm62b-etched.step / bcm62b-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); bcm62b.step / bcm62b.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Nexperia datasheet (13 pp, sha256 552ef3be9f13491a, retrieved 2026-10-22, tier: manufacturer)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF