Loads when you scroll to it. Unloads after 5 minutes in the background.

Symbol & Footprint

Schematic Symbol

Open full view ↗
Loads when you scroll to it. Unloads after 5 minutes in the background.

PCB Footprint

Open full view ↗
Loads when you scroll to it. Unloads after 5 minutes in the background.
Loads when you scroll to it. Unloads after 5 minutes in the background.
Download PDF
Contents

README

markdown

2SB624

Shikues · Bipolar (BJT) · SOT-23

2SB624 from Shikues, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 BASE input Base terminal of the PNP transistor; emitter-base voltage limited to -5 V and emitter cut-off current IEBO max -100 nA at VEB = -3 V.
2 EMITTER passive Emitter terminal of the PNP transistor; emitter-base breakdown voltage BVEBO is -5 V min at IE = -100 µA.
3 COLLECTOR passive Collector terminal of the PNP transistor; VCBO -30 V, VCEO -25 V, continuous collector current -700 mA.

Key specifications

Parameter Value
Manufacturer Shikues
Package SOT-23
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Collector-emitter breakdown voltage BVCEO -25 V IC = -1mA, IB = 0 1
Collector-base breakdown voltage BVCBO -30 V IC = -100μA, IE = 0 1
Emitter-base breakdown voltage BVEBO -5 V IE = -100μA, IC = 0 1
Collector cut-off current ICBO -100 nA VCB = -30V, IE = 0 1
Emitter cut-off current IEBO -100 nA VEB = -3V, IC = 0 1
DC current gain, group A hFE 110 180 VCE = -1V, IC = -100mA 1
DC current gain, group B hFE 135 220 VCE = -1V, IC = -100mA 1
DC current gain, group C hFE 170 270 VCE = -1V, IC = -100mA 1
DC current gain, group D hFE 200 320 VCE = -1V, IC = -100mA 1
DC current gain, group E hFE 250 400 VCE = -1V, IC = -100mA 1
DC current gain hFE 50 VCE = -1V, IC = -700mA 1
Collector-emitter saturation voltage VCE(SAT) -0.6 V IC = -700mA, IB = -70mA 1
Base-emitter saturation voltage VBE(ON) -0.6 -0.7 V VCE = -6V, IC = -10mA 1
Transition frequency fT 160 MHz VCE = -6V, IC = -10mA 1
Output capacitance Cob 17 pF VCB = -6V, IE = 0, f = 1MHz 1
Collector-base voltage VCBO -30 V 1
Collector-emitter voltage VCEO -25 V 1
Emitter-base voltage VCBO -5 V 1
Collector current, continuous IC -700 mA 1
Total power dissipation Ptot 200 mW TA = 25℃ 1
Junction temperature TJ 150 ℃ 1
Storage temperature range TSTG -55 150 ℃ 1

CAD (KiCad official)

  • Symbol: 2SB624
  • Footprint: Package_TO_SOT_SMD:SOT-23
  • 3D model: SOT-23 (KiCad packages3D, STEP)
  • 3D model files: 2sb624-etched.step / 2sb624-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); 2sb624.step / 2sb624.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Shikues datasheet (3 pp, sha256 63bd0757341ff857, retrieved 2026-10-18, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF