component
ZXTN23015CFHTA
Public Made by Adomby adom
Diodes Incorporated Bipolar Transistors - BJT, SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownZXTN23015CFHTA
Diodes Incorporated · Bipolar Transistors - BJT · SOT-23
ZXTN23015CFHTA from Diodes Incorporated, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | B | input | Base; drives the NPN transistor, with VEBO limited to 7.0 V and IB to 1.2 A absolute maximum. |
| 2 | E | passive | Emitter; V(BR)EBO is 7.0 V minimum, and continuous collector current is 6 A. |
| 3 | C | passive | Collector; VCEO is 15 V, V(BR)CEX and VCBO are 60 V, continuous current is 6 A and peak pulse current is 12 A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Diodes Incorporated |
| Package | SOT-23 |
| Category | Triode/MOS Tube/Transistor |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Collector-base voltage | VCBO | 60 | V | 2 | |||
| Collector-emitter voltage | V(BR)CEX | 60 | V | 2 | |||
| Collector-emitter voltage | VCEO | 15 | V | 2 | |||
| Emitter-base voltage | VEBO | 7 | V | 2 | |||
| Peak pulse current | ICM | 12 | A | 2 | |||
| Continuous collector current | IC | 6 | A | (c) 50mm x 50mm x 1.6mm FR4, 2oz Cu, still air | 2 | ||
| Base current | IB | 1.2 | A | 2 | |||
| Power dissipation (a) | PD | 0.73 | W | TA=25°C, 15mm x 15mm FR4 1oz Cu; derating 5.84 mW/°C | 2 | ||
| Power dissipation (b) | PD | 1.05 | W | TA=25°C, 25mm x 25mm FR4 2oz Cu; derating 8.4 mW/°C | 2 | ||
| Power dissipation (c) | PD | 1.25 | W | TA=25°C, 50mm x 50mm FR4 2oz Cu; derating 9.6 mW/°C | 2 | ||
| Power dissipation (d) | PD | 1.81 | W | TA=25°C, as (c) at t<5secs; derating 14.5 mW/°C | 2 | ||
| Operating and storage temperature | Tj, Tstg | -55 | 150 | °C | 2 | ||
| Thermal resistance junction to ambient (a) | RθJA | 171 | °C/W | (a) | 2 | ||
| Thermal resistance junction to ambient (b) | RθJA | 119 | °C/W | (b) | 2 | ||
| Thermal resistance junction to ambient (c) | RθJA | 100 | °C/W | (c) | 2 | ||
| Thermal resistance junction to ambient (d) | RθJA | 69 | °C/W | (d) | 2 | ||
| Collector-base breakdown voltage | V(BR)CBO | 60 | 85 | V | IC=100A | 4 | |
| Collector-emitter breakdown voltage | V(BR)CEX | 60 | 85 | V | IC =100A, RBE < 1k OR -1V < VBE < 0.25V | 4 | |
| Collector-emitter breakdown voltage | V(BR)CEO | 15 | 23 | V | IC=10mA (*) | 4 | |
| Emitter-base breakdown voltage | V(BR)EBO | 7 | 8.3 | V | IE=100A | 4 | |
| Collector-emitter cut-off current | ICEX | 100 | nA | VCE = 48V, RBE < 1k OR -1V < VBE < 0.25V | 4 | ||
| Collector-base cut-off current | ICBO | 20 | nA | VCB=48V | 4 | ||
| Emitter-base cut-off current | IEBO | 10 | nA | VEB=6V | 4 | ||
| Static forward current transfer ratio | HFE | 160 | 300 | IC=10mA, VCE=2V(*) | 4 | ||
| Static forward current transfer ratio | HFE | 200 | 350 | 560 | IC=500mA, VCE=2V(*) | 4 | |
| Static forward current transfer ratio | HFE | 190 | 330 | IC=3A, VCE=2V(*) | 4 | ||
| Static forward current transfer ratio | HFE | 150 | 280 | IC=6A, VCE=2V(*) | 4 | ||
| Collector-emitter saturation voltage | VCE(sat) | 7 | 15 | mV | IC=0.1A, IB=5mA(*) | 4 | |
| Collector-emitter saturation voltage | VCE(sat) | 22 | 30 | mV | IC=1A, IB=100mA(*) | 4 | |
| Collector-emitter saturation voltage | VCE(sat) | 70 | 90 | mV | IC=3A, IB=60mA(*) | 4 | |
| Collector-emitter saturation voltage | VCE(sat) | 130 | 180 | mV | IC=6A, IB=120mA(*) | 4 | |
| Base-emitter saturation voltage | VBE(sat) | 0.83 | 0.93 | V | IC=3A, IB=60mA(*) | 4 | |
| Base-emitter saturation voltage | VBE(sat) | 0.89 | 0.98 | V | IC=6A, IB=120mA(*) | 4 | |
| Base-emitter turn-on voltage | VBE(on) | 0.81 | 0.91 | V | IC=6A, VCE=2V(*) | 4 | |
| Transition frequency | fT | 235 | MHz | Ic=500mA, VCE=2V, f=50MHz | 4 | ||
| Output capacitance | Cobo | 56 | pF | VCB=10V, f=1MHz | 4 | ||
| Delay time | td | 15 | ns | VCC=5V, IC=3A, IB1=IB2=150mA | 4 | ||
| Rise time | tr | 38.5 | ns | VCC=5V, IC=3A, IB1=IB2=150mA | 4 | ||
| Storage time | tstg | 213 | ns | VCC=5V, IC=3A, IB1=IB2=150mA | 4 | ||
| Fall time | tf | 19.7 | ns | VCC=5V, IC=3A, IB1=IB2=150mA | 4 |
CAD (KiCad official)
- Symbol:
ZXTN23015CFHTA - Footprint:
Package_TO_SOT_SMD:SOT-23 - 3D model: SOT-23 (KiCad packages3D, STEP)
- 3D model files:
zxtn23015cfhta-etched.step/zxtn23015cfhta-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);zxtn23015cfhta.step/zxtn23015cfhta.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Diodes Incorporated datasheet (6 pp, sha256
8e0c60f830a5c9b6, retrieved 2026-10-26, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).