component
HSM10N15A
Public Made by Adomby adom
HUASHUO MOSFETs, SOP-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownHSM10N15A
HUASHUO · MOSFETs · SOP-8
HSM10N15A from HUASHUO, in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S | passive | Source of the N-channel MOSFET, tied with pins 2 and 3. |
| 2 | S | passive | Source of the N-channel MOSFET, tied with pins 1 and 3. |
| 3 | S | passive | Source of the N-channel MOSFET, tied with pins 1 and 2. |
| 4 | G | input | Gate of the N-channel MOSFET; absolute maximum VGS is ±20 V, with a threshold of 2 to 4 V at 250 µA. |
| 5 | D | passive | Drain, tied with pins 6, 7 and 8; VDS is rated 150 V. |
| 6 | D | passive | Drain, tied with pins 5, 7 and 8; VDS is rated 150 V. |
| 7 | D | passive | Drain, tied with pins 5, 6 and 8; VDS is rated 150 V. |
| 8 | D | passive | Drain, tied with pins 5, 6 and 7; VDS is rated 150 V. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | HUASHUO |
| Package | SOP-8 |
| Category | Transistors/Thyristors |
| Pins | 8 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | 150 | V | 1 | |||
| Gate-Source Voltage | VGS | -20 | 20 | V | 1 | ||
| Continuous Drain Current | ID | 10 | A | VGS @ 10V, TC=25℃ | 1 | ||
| Continuous Drain Current | ID | 8 | A | VGS @ 10V, TC=100℃ | 1 | ||
| Continuous Drain Current | ID | 5 | A | VGS @ 10V, TA=25℃ | 1 | ||
| Continuous Drain Current | ID | 3.8 | A | VGS @ 10V, TA=70℃ | 1 | ||
| Pulsed Drain Current | IDM | 50 | A | 1 | |||
| Total Power Dissipation | PD | 2.7 | W | TA=25℃ | 1 | ||
| Storage Temperature Range | TSTG | -55 | 150 | ℃ | 1 | ||
| Operating Junction Temperature Range | TJ | -55 | 150 | ℃ | 1 | ||
| Thermal Resistance Junction-ambient | RθJA | 85 | ℃/W | Note 1 | 1 | ||
| Thermal Resistance Junction-Case | RθJC | 23 | ℃/W | Note 1 | 1 | ||
| Drain-Source Breakdown Voltage | BVDSS | 150 | V | VGS=0V, ID=250uA | 2 | ||
| Static Drain-Source On-Resistance | RDS(ON) | 35 | 56 | mΩ | VGS=10V, ID=4A | 2 | |
| Gate Threshold Voltage | VGS(th) | 2 | 2.9 | 4 | V | VGS=VDS, ID=250uA | 2 |
| Drain-Source Leakage Current | IDSS | 1 | uA | VDS=120V, VGS=0V, TJ=25℃ | 2 | ||
| Drain-Source Leakage Current | IDSS | 5 | uA | VDS=120V, VGS=0V, TJ=55℃ | 2 | ||
| Gate-Source Leakage Current | IGSS | -100 | 100 | nA | VGS=±20V, VDS=0V | 2 | |
| Diode Forward Voltage | VSD | 1.2 | V | VGS=0V, IS=1A, TJ=25℃ | 2 |
CAD (KiCad official)
- Symbol:
HSM10N15A - Footprint:
Package_SO:SOIC-8_3.9x4.9mm_P1.27mm - 3D model: SOP-8 (KiCad packages3D, STEP)
- 3D model files:
hsm10n15a-etched.step/hsm10n15a-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);hsm10n15a.step/hsm10n15a.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: HUASHUO datasheet (6 pp, sha256
bd157972a161fe42, retrieved 2026-10-19, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).