component
AO4480-MS
Public Made by Adomby adom
MSKSEMI MOSFETs, SOP-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownAO4480-MS
MSKSEMI · MOSFETs · SOP-8
AO4480-MS from MSKSEMI, in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S | passive | Source of the N-channel MOSFET (one of three source pins, 1-3, tied together). |
| 2 | S | passive | Source of the N-channel MOSFET (one of three source pins, 1-3, tied together). |
| 3 | S | passive | Source of the N-channel MOSFET (one of three source pins, 1-3, tied together). |
| 4 | G | input | Gate of the N-channel MOSFET; VGS rated ±20V, threshold 1V min to 3V max at ID=250uA. |
| 5 | D | passive | Drain of the N-channel MOSFET (one of four drain pins, 5-8, tied together); VDS 40V max, ID 14A continuous at TA=25C. |
| 6 | D | passive | Drain of the N-channel MOSFET (one of four drain pins, 5-8, tied together); VDS 40V max, ID 14A continuous at TA=25C. |
| 7 | D | passive | Drain of the N-channel MOSFET (one of four drain pins, 5-8, tied together); VDS 40V max, ID 14A continuous at TA=25C. |
| 8 | D | passive | Drain of the N-channel MOSFET (one of four drain pins, 5-8, tied together); VDS 40V max, ID 14A continuous at TA=25C. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | MSKSEMI |
| Package | SOP-8 |
| Category | Transistors/Thyristors |
| Pins | 8 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Absolute maximum drain-source voltage | VDS | 40 | V | 2 | |||
| Absolute maximum gate-source voltage | VGS | -20 | 20 | V | 2 | ||
| Continuous drain current | ID | 14 | A | TA=25℃ | 2 | ||
| Continuous drain current | ID | 10 | A | TA=70℃ | 2 | ||
| Pulsed drain current | IDM | 70 | A | 2 | |||
| Avalanche current | IAR | 30 | A | 2 | |||
| Repetitive avalanche energy | EAR | 135 | mJ | L=0.3mH | 2 | ||
| Power dissipation | PD | 3.1 | W | TA=25℃ | 2 | ||
| Power dissipation | PD | 2 | W | TA=70℃ | 2 | ||
| Junction temperature | TJ | 150 | ℃ | 2 | |||
| Storage temperature range | Tstg | -55 | 150 | ℃ | 2 | ||
| Thermal resistance junction-to-ambient | RthJA | 40 | ℃/W | t ≤ 10s | 2 | ||
| Thermal resistance junction-to-ambient | RthJA | 75 | ℃/W | Steady-State | 2 | ||
| Thermal resistance junction-to-lead | RthJL | 24 | ℃/W | 2 | |||
| Drain-source breakdown voltage | VDSS | 40 | V | ID=250 μA, VGS=0V | 3 | ||
| Zero gate voltage drain current | IDSS | 1 | uA | VDS=32V, VGS=0V | 3 | ||
| Zero gate voltage drain current | IDSS | 5 | uA | VDS=32V, VGS=0V, TJ=55℃ | 3 | ||
| Gate threshold voltage | VGS(th) | 1 | 3 | V | VDS=VGS, ID=250uA | 3 | |
| Static drain-source on-resistance | RDS(On) | 11.5 | mΩ | VGS=10V, ID=14A | 3 | ||
| Static drain-source on-resistance | RDS(On) | 13 | mΩ | VGS=10V, ID=14A, TJ=125℃ | 3 | ||
| Static drain-source on-resistance | RDS(On) | 16.5 | mΩ | VGS=4.5V, ID=5A | 3 | ||
| On-state drain current | ID(ON) | 70 | A | VGS=10V, VDS=5V | 3 | ||
| Forward transconductance | gFS | 50 | S | VDS=5V, ID=5A | 3 | ||
| Input capacitance | Ciss | 1600 | 1920 | pF | VGS=0V, VDS=20V, f=1MHz | 3 | |
| Output capacitance | Coss | 320 | pF | VGS=0V, VDS=20V, f=1MHz | 3 | ||
| Reverse transfer capacitance | Crss | 100 | pF | VGS=0V, VDS=20V, f=1MHz | 3 | ||
| Gate resistance | Rg | 3.4 | Ω | VGS=0V, VDS=0V, f=1MHz | 3 | ||
| Total gate charge (10V) | Qg | 22 | nC | VGS=10V, VDS=20V, ID=14A | 3 | ||
| Total gate charge (4.5V) | Qg | 10.5 | nC | VGS=10V, VDS=20V, ID=14A | 3 | ||
| Gate source charge | Qgs | 4.2 | nC | VGS=10V, VDS=20V, ID=14A | 3 | ||
| Gate drain charge | Qgd | 4.8 | nC | VGS=10V, VDS=20V, ID=14A | 3 | ||
| Turn-on delay time | td(on) | 3.5 | ns | VGS=10V, VDS=20V, RL=1.5Ω, RGEN=3Ω | 3 | ||
| Turn-on rise time | tr | 6 | ns | VGS=10V, VDS=20V, RL=1.5Ω, RGEN=3Ω | 3 | ||
| Turn-off delay time | td(off) | 13.2 | ns | VGS=10V, VDS=20V, RL=1.5Ω, RGEN=3Ω | 3 | ||
| Turn-off fall time | tf | 3.5 | ns | VGS=10V, VDS=20V, RL=1.5Ω, RGEN=3Ω | 3 | ||
| Body diode reverse recovery time | trr | 31 | ns | IF=14A, dI/dt=100A/us | 3 | ||
| Body diode reverse recovery charge | Qrr | 33 | nC | IF=14A, dI/dt=100A/us | 3 | ||
| Maximum body-diode continuous current | IS | 4 | A | 3 | |||
| Diode forward voltage | VSD | 1 | V | IS=1A, VGS=0V | 3 |
CAD (KiCad official)
- Symbol:
AO4480-MS - Footprint:
Package_SO:SOIC-8_3.9x4.9mm_P1.27mm - 3D model: SOP-8 (KiCad packages3D, STEP)
- 3D model files:
ao4480-ms-etched.step/ao4480-ms-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);ao4480-ms.step/ao4480-ms.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: MSKSEMI datasheet (7 pp, sha256
b4f45727c6172233, retrieved 2026-10-18, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).