component
IRF7855TRPBF
Public Made by Adomby adom
Infineon Technologies MOSFETs, SO-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownIRF7855TRPBF
Infineon Technologies · MOSFETs · SO-8
IRF7855TRPBF from Infineon Technologies, in a SO-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S | passive | Source terminal of the HEXFET; the integral body diode runs source to drain, rated for continuous source current of 2.3 A and pulsed source current of 97 A. |
| 2 | S | passive | Source terminal of the HEXFET; the integral body diode runs source to drain, rated for continuous source current of 2.3 A and pulsed source current of 97 A. |
| 3 | S | passive | Source terminal of the HEXFET; the integral body diode runs source to drain, rated for continuous source current of 2.3 A and pulsed source current of 97 A. |
| 4 | G | input | Gate terminal of the MOSFET; gate-to-source voltage is rated ±20 V maximum. |
| 5 | D | passive | Drain terminal of the MOSFET; drain-to-source voltage is rated 60 V (V(BR)DSS minimum 60 V). |
| 6 | D | passive | Drain terminal of the MOSFET; drain-to-source voltage is rated 60 V (V(BR)DSS minimum 60 V). |
| 7 | D | passive | Drain terminal of the MOSFET; drain-to-source voltage is rated 60 V (V(BR)DSS minimum 60 V). |
| 8 | D | passive | Drain terminal of the MOSFET; drain-to-source voltage is rated 60 V (V(BR)DSS minimum 60 V). |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Infineon Technologies |
| Package | SO-8 |
| Category | Transistors/Thyristors |
| Pins | 8 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-to-Source Breakdown Voltage | V(BR)DSS | 60 | V | VGS = 0V, ID = 250µA | 2 | ||
| Static Drain-to-Source On-Resistance | RDS(on) | 7.4 | 9.4 | mΩ | VGS = 10V, ID = 12A | 2 | |
| Gate Threshold Voltage | VGS(th) | 3 | 4.9 | V | VDS = VGS, ID = 100µA | 2 | |
| Drain-to-Source Leakage Current | IDSS | 20 | µA | VDS = 60V, VGS = 0V | 2 | ||
| Drain-to-Source Leakage Current | IDSS | 250 | µA | VDS = 60V, VGS = 0V, TJ = 125°C | 2 | ||
| Gate-to-Source Forward Leakage | IGSS | 100 | nA | VGS = 20V | 2 | ||
| Gate-to-Source Reverse Leakage | IGSS | -100 | nA | VGS = -20V | 2 | ||
| Forward Transconductance | gfs | 14 | S | VDS = 25V, ID = 7.2A | 2 | ||
| Total Gate Charge | Qg | 26 | 39 | nC | VGS = 10V, ID = 7.2A, VDS = 30V | 2 | |
| Continuous Source Current (Body Diode) | IS | 2.3 | A | 2 | |||
| Pulsed Source Current (Body Diode) | ISM | 97 | A | 2 | |||
| Diode Forward Voltage | VSD | 1.3 | V | TJ = 25°C, IS = 7.2A, VGS = 0V | 2 | ||
| Reverse Recovery Time | trr | 33 | 50 | ns | TJ = 25°C, IF = 7.2A, VDD = 25V, di/dt = 100A/µs | 2 | |
| Reverse Recovery Charge | Qrr | 38 | 57 | nC | TJ = 25°C, IF = 7.2A, VDD = 25V, di/dt = 100A/µs | 2 | |
| Single Pulse Avalanche Energy | EAS | 540 | mJ | Starting TJ = 25°C, L = 21mH, RG = 25Ω, IAS = 7.2A | 2 | ||
| Avalanche Current | IAR | 7.2 | A | 2 | |||
| Drain-to-Source Voltage | VDS | 60 | V | 1 | |||
| Gate-to-Source Voltage | VGS | -20 | 20 | V | 1 | ||
| Continuous Drain Current | ID | 12 | A | TA = 25°C, VGS @ 10V | 1 | ||
| Continuous Drain Current | ID | 8.7 | A | TA = 70°C, VGS @ 10V | 1 | ||
| Pulsed Drain Current | IDM | 97 | A | 1 | |||
| Maximum Power Dissipation | PD | 2.5 | W | TA = 25°C | 1 | ||
| Linear Derating Factor | 0.02 | W/°C | 1 | ||||
| Peak Diode Recovery dv/dt | dv/dt | 9.9 | V/ns | 1 | |||
| Operating Junction Temperature | TJ | -55 | 150 | °C | 1 | ||
| Storage Temperature Range | TSTG | -55 | 150 | °C | 1 | ||
| Junction-to-Drain Lead Thermal Resistance | RθJL | 20 | °C/W | 1 | |||
| Junction-to-Ambient Thermal Resistance (PCB Mount) | RθJA | 50 | °C/W | PCB mount, 1 inch square copper board, t ≤ 10 sec | 1 |
CAD (KiCad official)
- Symbol:
IRF7855TRPBF - Footprint:
Package_SO:SOIC-8_3.9x4.9mm_P1.27mm - 3D model: SO-8 (KiCad packages3D, STEP)
- 3D model files:
irf7855trpbf-etched.step/irf7855trpbf-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);irf7855trpbf.step/irf7855trpbf.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Infineon Technologies datasheet (8 pp, sha256
ea2b7ec97db37831, retrieved 2026-10-09, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).