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2N3904G-T92-B

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UTC(Unisonic Tech) Bipolar Transistors - BJT, TO-92. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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Contents

README

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2N3904G-T92-B

UTC(Unisonic Tech) · Bipolar Transistors - BJT · TO-92

2N3904G-T92-B from UTC(Unisonic Tech), in a TO-92. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 E passive Emitter terminal of the NPN transistor; the emitter-base breakdown voltage BVEBO is rated 6 V.
2 B input Base terminal of the NPN transistor; the base-emitter saturation voltage VBE(SAT) is 0.85 V maximum at IC=10mA, IB=1mA.
3 C passive Collector terminal of the NPN transistor; the absolute maximum collector-emitter voltage VCEO is 40 V and collector current IC is 200 mA.

Key specifications

Parameter Value
Manufacturer UTC(Unisonic Tech)
Package TO-92
Category Transistors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Collector-Base Breakdown Voltage BVCBO 60 V IC=10A, IE=0 2
Collector-Emitter Breakdown Voltage BVCEO 40 V IC=1mA,IB=0 (Note) 2
Emitter-Base Breakdown Voltage BVEBO 6 V IE=10A, IC=0 2
Collector-Emitter Saturation Voltage VCE(SAT)1 0.2 V IC=10mA, IB=1mA 2
Collector-Emitter Saturation Voltage VCE(SAT)2 0.3 V IC=50mA, IB=5mA 2
Base-Emitter Saturation Voltage VBE(SAT)1 0.65 0.85 V IC=10mA, IB=1mA 2
Base-Emitter Saturation Voltage VBE(SAT)2 0.95 V IC=50mA, IB=5mA 2
Collector Cut-off Current ICBO 50 nA VCE=30V, VEB=3V 2
Base Cut-off Current IBL 50 nA VCE=30V, VEB=3V 2
DC Current Gain hFE1 40 VCE=1V, IC=0.1mA 2
DC Current Gain hFE2 70 VCE=1V, IC=1mA 2
DC Current Gain hFE3 100 300 VCE=1V, IC=10mA 2
DC Current Gain hFE4 60 VCE=1V, IC=50mA 2
DC Current Gain hFE5 30 VCE=1V, IC=100mA 2
Current Gain Bandwidth Product fT 300 MHz VCE=20V, IC=10mA, f=100MHz 2
Output Capacitance COB 4 pF VCB=5V, IE=0, f=1MHz 2
Turn on Time tON 70 ns VCC=3V,VBE=0.5V,IC=10mA, IB1=1mA 2
Turn off Time tOFF 250 ns IB1=1B2=1mA 2
Collector-Base Voltage VCBO 60 V 2
Collector-Emitter Voltage VCEO 40 V 2
Emitter-Base Voltage VEBO 6 V 2
Collector Current IC 200 mA 2
Collector Dissipation (TO-92) PC 625 mW TO-92 2
Junction Temperature TJ 150 °C 2
Operating and Storage Temperature TSTG -55 150 °C 2
Junction to Ambient (TO-92) θJA 200 °C/W TO-92 2
Junction to Case (TO-92) θJC 83.3 °C/W TO-92 2

CAD (KiCad official)

  • Symbol: 2N3904G-T92-B
  • Footprint: Package_TO_SOT_THT:TO-92_Inline
  • 3D model: TO-92 (KiCad packages3D, STEP)
  • 3D model files: 2n3904g-t92-b-etched.step / 2n3904g-t92-b-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); 2n3904g-t92-b.step / 2n3904g-t92-b.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: UTC(Unisonic Tech) datasheet (4 pp, sha256 a5a41036b90fae40, retrieved 2026-10-27, tier: manufacturer)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF