component
IRF8736TRPBF
Public Made by Adomby adom
Infineon Technologies MOSFETs, SO-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownIRF8736TRPBF
Infineon Technologies · MOSFETs · SO-8
IRF8736TRPBF from Infineon Technologies, in a SO-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S | passive | Source terminal of the N-channel HEXFET, rated for a drain-to-source voltage of 30 V maximum. |
| 2 | S | passive | Source terminal of the N-channel HEXFET, rated for a drain-to-source voltage of 30 V maximum. |
| 3 | S | passive | Source terminal of the N-channel HEXFET, rated for a drain-to-source voltage of 30 V maximum. |
| 4 | G | input | Gate terminal, with gate-to-source voltage limited to ±20 V. |
| 5 | D | passive | Drain terminal of the N-channel HEXFET, rated for a drain-to-source voltage of 30 V maximum. |
| 6 | D | passive | Drain terminal of the N-channel HEXFET, rated for a drain-to-source voltage of 30 V maximum. |
| 7 | D | passive | Drain terminal of the N-channel HEXFET, rated for a drain-to-source voltage of 30 V maximum. |
| 8 | D | passive | Drain terminal of the N-channel HEXFET, rated for a drain-to-source voltage of 30 V maximum. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Infineon Technologies |
| Package | SO-8 |
| Category | Transistors/Thyristors |
| Pins | 8 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-to-Source Breakdown Voltage | BVDSS | 30 | V | VGS = 0V, ID = 250µA | 2 | ||
| Static Drain-to-Source On-Resistance | RDS(on) | 3.9 | 4.8 | mΩ | VGS = 10V, ID = 18A | 2 | |
| Static Drain-to-Source On-Resistance | RDS(on) | 5.5 | 6.8 | mΩ | VGS = 4.5V, ID = 14.4A | 2 | |
| Gate Threshold Voltage | VGS(th) | 1.35 | 1.8 | 2.35 | V | VDS = VGS, ID = 50µA | 2 |
| Drain-to-Source Leakage Current | IDSS | 1 | µA | VDS = 24V, VGS = 0V | 2 | ||
| Drain-to-Source Leakage Current | IDSS | 150 | µA | VDS = 24V, VGS = 0V, TJ = 125°C | 2 | ||
| Gate-to-Source Forward Leakage | IGSS | 100 | nA | VGS = 20V | 2 | ||
| Gate-to-Source Reverse Leakage | IGSS | -100 | nA | VGS = -20V | 2 | ||
| Forward Transconductance | gfs | 52 | S | VDS = 15V, ID = 14.4A | 2 | ||
| Total Gate Charge | Qg | 17 | 26 | nC | VDD = 15V, VGS = 4.5V, ID = 14.4A | 2 | |
| Gate Resistance | RG | 1.3 | 2.2 | Ω | 2 | ||
| Continuous Source Current (Body Diode) | IS | 3.1 | A | 2 | |||
| Pulsed Source Current (Body Diode) | ISM | 144 | A | 2 | |||
| Diode Forward Voltage | VSD | 1 | V | TJ = 25°C, IS = 14.4A, VGS = 0V | 2 | ||
| Reverse Recovery Time | trr | 16 | 24 | ns | TJ = 25°C, IF = 14.4A, VDD = 10V, di/dt = 300A/µs | 2 | |
| Reverse Recovery Charge | Qrr | 19 | 29 | nC | TJ = 25°C, IF = 14.4A, VDD = 10V, di/dt = 300A/µs | 2 | |
| Single Pulse Avalanche Energy | EAS | 126 | mJ | 2 | |||
| Avalanche Current | IAR | 14.4 | A | 2 | |||
| Drain-to-Source Voltage | VDS | 30 | V | 1 | |||
| Gate-to-Source Voltage | VGS | -20 | 20 | V | 1 | ||
| Continuous Drain Current, VGS @ 10V | ID @ TA = 25°C | 18 | A | TA = 25°C | 1 | ||
| Continuous Drain Current, VGS @ 10V | ID @ TA = 70°C | 14.4 | A | TA = 70°C | 1 | ||
| Pulsed Drain Current | IDM | 144 | A | 1 | |||
| Power Dissipation | PD @TA = 25°C | 2.5 | W | TA = 25°C | 1 | ||
| Power Dissipation | PD @TA = 70°C | 1.6 | W | TA = 70°C | 1 | ||
| Linear Derating Factor | 0.02 | W/°C | 1 | ||||
| Operating Junction Temperature | TJ | -55 | 150 | °C | 1 | ||
| Storage Temperature Range | TSTG | -55 | 150 | °C | 1 | ||
| Junction-to-Drain Lead Thermal Resistance | RθJL | 20 | °C/W | 1 | |||
| Junction-to-Ambient Thermal Resistance | RθJA | 50 | °C/W | 1 |
CAD (KiCad official)
- Symbol:
IRF8736TRPBF - Footprint:
Package_SO:SOIC-8_3.9x4.9mm_P1.27mm - 3D model: SO-8 (KiCad packages3D, STEP)
- 3D model files:
irf8736trpbf-etched.step/irf8736trpbf-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);irf8736trpbf.step/irf8736trpbf.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Infineon Technologies datasheet (9 pp, sha256
02110c9e27ddbafe, retrieved 2026-10-17, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).