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MMDT3946-TP

Public Made by Adom

by adom

MCC Micro Commercial Components Bipolar (BJT), SOT-363. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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Contents

README

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MMDT3946-TP

MCC Micro Commercial Components · Bipolar (BJT) · SOT-363

MMDT3946-TP from MCC Micro Commercial Components, in a SOT-363. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 E1 passive NPN transistor emitter; the NPN section is rated VCBO 60 V, VCEO 40 V, VEBO 6 V and IC 200 mA.
2 B1 passive NPN transistor base; emitter-base voltage limit is 6 V.
3 C2 passive PNP transistor collector; the PNP section is rated VCBO -40 V, VCEO -40 V and IC -200 mA.
4 E2 passive PNP transistor emitter; emitter-base voltage limit is -5 V.
5 B2 passive PNP transistor base.
6 C1 passive NPN transistor collector; collector-emitter voltage limit is 40 V and continuous current is 200 mA.

Key specifications

Parameter Value
Manufacturer MCC Micro Commercial Components
Package SOT-363
Category Transistors/Thyristors
Pins 6

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
NPN Collector-Base Breakdown Voltage V(BR)CBO 60 V IC=10µA, IE=0 2
NPN Collector-Emitter Breakdown Voltage V(BR)CEO 40 V IC=1mA, IB=0 2
NPN Emitter-Base Breakdown Voltage V(BR)EBO 6 V IE=10µA, IC=0 2
NPN Collector Cutoff Current ICEO 500 nA VCE=30V, IB=0 2
NPN Emitter Cutoff Current IEBO 50 nA VEB=5V, IC=0 2
NPN Collector Cutoff Current ICBO 50 nA VCB=30V, IE=0 2
NPN DC Current Gain hFE(1) hFE(1) 40 VCE=1V, IC=0.1mA 2
NPN DC Current Gain hFE(2) hFE(2) 70 VCE=1V, IC=1mA 2
NPN DC Current Gain hFE(3) hFE(3) 100 300 VCE=1V, IC=10mA 2
NPN DC Current Gain hFE(4) hFE(4) 60 VCE=1V, IC=50mA 2
NPN DC Current Gain hFE(5) hFE(5) 30 VCE=1V, IC=100mA 2
NPN Collector-Emitter Saturation Voltage VCE(sat) 0.2 V IC=10mA, IB=1mA 2
NPN Collector-Emitter Saturation Voltage VCE(sat) 0.3 V IC=50mA, IB=5mA 2
NPN Base-Emitter Saturation Voltage VBE(sat) 0.65 0.85 V IC=10mA, IB=1mA 2
NPN Base-Emitter Saturation Voltage VBE(sat) 0.95 V IC=50mA, IB=5mA 2
NPN Output Capacitance Cob 4 pF VCB=5V, IE=0, f=1MHz 2
NPN Noise Figure NF 5 dB VCE=5V,IC=0.1mA,f=1KHz,Rs=1KΩ 2
NPN Transition Frequency fT 300 MHz VCE=20V, IC=20mA, f=100MHz 2
NPN Delay Time td 35 ns VCC=3V, IC=10mA, VBE=0.5V, IB1=1mA 2
NPN Rise Time tr 35 ns VCC=3V, IC=10mA, VBE=0.5V, IB1=1mA 2
NPN Storage Time ts 200 ns VCC=3V, IC=10mA, IB1=IB2=1mA 2
NPN Fall Time tf 50 ns VCC=3V, IC=10mA, IB1=IB2=1mA 2
PNP Collector-Base Breakdown Voltage V(BR)CBO -40 V IC=-10µA, IE=0 3
PNP Collector-Emitter Breakdown Voltage V(BR)CEO -40 V IC=-1mA, IB=0 3
PNP Emitter-Base Breakdown Voltage V(BR)EBO -5 V IE=-10µA, IC=0 3
PNP Collector Cutoff Current ICBO -50 nA VCB=-30V, IE=0 3
PNP Emitter Cutoff Current IEBO -50 nA VEB=-5V, IC=0 3
PNP DC Current Gain hFE(1) hFE(1) 40 VCE=-1V, IC=-0.1mA 3
PNP DC Current Gain hFE(2) hFE(2) 70 VCE=-1V, IC=-1mA 3
PNP DC Current Gain hFE(3) hFE(3) 100 300 VCE=-1V, IC=-10mA 3
PNP DC Current Gain hFE(4) hFE(4) 60 VCE=-1V, IC=-50mA 3
PNP DC Current Gain hFE(5) hFE(5) 30 VCE=-1V, IC=-100mA 3
PNP Collector-Emitter Saturation Voltage VCE(sat) -0.25 V IC=-10mA, IB=-1mA 3
PNP Collector-Emitter Saturation Voltage VCE(sat) -0.4 V IC=-50mA, IB=-5mA 3
PNP Base-Emitter Saturation Voltage VBE(sat) -0.65 -0.85 V IC=-10mA, IB=-1mA 3
PNP Base-Emitter Saturation Voltage VBE(sat) -0.95 V IC=-50mA, IB=-5mA 3
PNP Output Capacitance Cob 4.5 pF VCB=-5V, IE=0, f=1MHz 3
PNP Noise Figure NF 4 dB VCE=-5V,IC=-0.1mA,f=1KHz,Rs=1KΩ 3
PNP Transition Frequency fT 250 MHz VCE=-20V, IC=-10mA, f=100MHz 3
PNP Delay Time td 35 ns VCC=-3V, IC=-10mA, VBE=-0.5V, IB1=-IB2=-1mA 3
PNP Rise Time tr 35 ns VCC=-3V, IC=-10mA, VBE=-0.5V, IB1=-IB2=-1mA 3
PNP Storage Time ts 225 ns VCC=-3V, IC=-10mA, IB1=-IB2=-1mA 3
PNP Fall Time tf 75 ns VCC=-3V, IC=-10mA, IB1=-IB2=-1mA 3
NPN Collector Current (continuous) IC 200 mA 1
NPN Collector-Emitter Voltage VCEO 40 V 1
NPN Emitter-Base Voltage VEBO 6 V 1
NPN Collector-Base Voltage VCBO 60 V 1
PNP Collector Current (continuous) IC -200 mA 1
PNP Collector-Emitter Voltage VCEO -40 V 1
PNP Emitter-Base Voltage VEBO -5 V 1
PNP Collector-Base Voltage VCBO -40 V 1
Power Dissipation PD 200 mW 1
Thermal Resistance Junction to Ambient RθJA 625 °C/W 1
Operating Junction Temperature Range TJ -55 150 ℃ 1
Storage Temperature Range TSTG -55 150 ℃ 1

CAD (KiCad official)

  • Symbol: MMDT3946-TP
  • Footprint: Package_TO_SOT_SMD:SOT-363_SC-70-6
  • 3D model: SOT-363 (KiCad packages3D, STEP)
  • 3D model files: mmdt3946-tp-etched.step / mmdt3946-tp-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); mmdt3946-tp.step / mmdt3946-tp.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: MCC Micro Commercial Components datasheet (6 pp, sha256 201883d8ee77fad0, retrieved 2026-10-18, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF