component

STTH102AY

Public Made by Adom

by adom

STMicroelectronics Fast Recovery/High Efficiency Diode, SMA. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

componentdiodesstth102ayfactory-2.0.0extractor-text
Overview Files Discover Packages Releases Dependencies Issues Breadcrumbs Pull Requests Activity

3D Model

Open in new tab ↗
Loads when you scroll to it. Unloads after 5 minutes in the background.

Symbol & Footprint

Schematic Symbol

Open full view ↗
Loads when you scroll to it. Unloads after 5 minutes in the background.

PCB Footprint

Open full view ↗
Loads when you scroll to it. Unloads after 5 minutes in the background.

Datasheet

Open in new tab ↗
Loads when you scroll to it. Unloads after 5 minutes in the background.
Download PDF
Contents

README

markdown

STTH102AY

STMicroelectronics · Fast Recovery/High Efficiency Diode · SMA

STTH102AY from STMicroelectronics, in a SMA. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 K passive Cathode of the diode; VRRM 200 V repetitive peak reverse voltage, IF(AV) 1 A average forward current.
2 A passive Anode of the diode; forward voltage drop VF max 0.78 V at IF = 1 A, Tj = 125 °C.

Key specifications

Parameter Value
Manufacturer STMicroelectronics
Package SMA
Category Diodes
Pins 2

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Repetitive peak reverse voltage VRRM 200 V 2
Average forward current IF(AV) 1 A TL = 148 °C δ = 0.5 2
Surge non repetitive forward current IFSM 40 A tp = 10 ms sinusoidal 2
Storage temperature range Tstg -65 175 °C 2
Operating junction temperature range Tj -40 175 °C 2
Critical rate of rise of reverse voltage dV/dt 10000 V/µs 2
Junction to lead thermal resistance Rth(j-l) 30 °C/W 2
Reverse leakage current IR 1 µA Tj = 25 °C, VR = VRRM 2
Reverse leakage current IR 1 25 µA Tj = 125 °C, VR = VRRM 2
Forward voltage drop VF 0.9 V Tj = 25 °C, IF = 700 mA 2
Forward voltage drop VF 0.97 V Tj = 25 °C, IF = 1 A 2
Forward voltage drop VF 0.68 0.78 V Tj = 125 °C, IF = 1 A 2
Reverse recovery time trr 12 20 ns Tj = 25 °C, IF = 0.5 A, Irr = 0.25 A, IR = 1 A 2
Forward recovery time tfr 50 ns Tj = 25 °C, IF = 1 A, dIF/dt = 50 A/ms, VFR = 1.1 x VFmax 2
Forward recovery voltage VFP 1.8 V Tj = 25 °C, IF = 1 A, dIF/dt = 50 A/ms 2

CAD (KiCad official)

  • Symbol: STTH102AY
  • Footprint: Diode_SMD:D_SMA
  • 3D model: SMA (KiCad packages3D, STEP)
  • 3D model files: stth102ay-etched.step / stth102ay-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); stth102ay.step / stth102ay.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: STMicroelectronics datasheet (7 pp, sha256 7aaf862d8f60c107, retrieved 2026-10-23, tier: manufacturer)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF