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Contents

README

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2SB649AG-C-TN3-R

UTC Unisonic Tech · Bipolar (BJT) · TO-252-2(DPAK)

2SB649AG-C-TN3-R from UTC Unisonic Tech, in a TO-252-2(DPAK). Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 B input Base terminal of the PNP transistor; the datasheet's TO-252 pin assignment places base on pin 1 (ordering table, B C E), and the emitter-base breakdown voltage is rated at VEBO -5 V.
2 C passive Collector terminal; the datasheet's TO-252 pin assignment places collector on pin 2, with maximum collector current IC -1.5 A and peak collector current -3 A.
3 E passive Emitter terminal; the datasheet's TO-252 pin assignment places emitter on pin 3, with collector-emitter voltage limited to -120 V (2SB649) or -160 V (2SB649A).

Key specifications

Parameter Value
Manufacturer UTC Unisonic Tech
Package TO-252-2(DPAK)
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Collector to Base Breakdown Voltage BVCBO -180 V IC=-1mA, IE=0 3
Collector to Emitter Breakdown Voltage (2SB649A) BVCEO -160 V IC=-10mA, RBE= 3
Emitter to Base Breakdown Voltage BVEBO -5 V IE=-1mA, IC=0 3
Collector Cut-off Current ICBO -10 μA VCB=-160V, IE=0 3
DC Current Gain (2SB649A) hFE1 60 200 VCE=-5V, IC=-150mA (note) 3
DC Current Gain (2SB649A) hFE2 30 VCE=-5V, IC=-500mA (note) 3
Collector-Emitter Saturation Voltage VCE(SAT) -1 V IC=-600mA, IB=-50mA 3
Base-Emitter Voltage VBE -1.5 V VCE=-5V, IC=-150mA 3
Current Gain Bandwidth Product fT 140 MHz VCE=-5V, IC=-150mA 3
Output Capacitance Cob 27 pF VCB=-10V, IE=0, f=1MHz 3
Collector Current IC -1.5 A 3
Collector Peak Current IC(PEAK) -3 A 3
Collector-Base Voltage VCBO -180 V 3
Collector-Emitter Voltage (2SB649A) VCEO -160 V 3
Emitter-Base Voltage VEBO -5 V 3
Power Dissipation PD 2 W TO-252 package 3
Junction Temperature TJ 150 °C 3
Storage Temperature TSTG -40 150 °C 3
Junction to Case Thermal Resistance θJC 4.5 °C/W TO-252 3

CAD (KiCad official)

  • Symbol: 2SB649AG-C-TN3-R
  • Footprint: Package_TO_SOT_SMD:TO-252-2
  • 3D model: TO-252-2(DPAK) (KiCad packages3D, STEP)
  • 3D model files: 2sb649ag-c-tn3-r-etched.step / 2sb649ag-c-tn3-r-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); 2sb649ag-c-tn3-r.step / 2sb649ag-c-tn3-r.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: UTC Unisonic Tech datasheet (5 pp, sha256 d5c719de64ed4d88, retrieved 2026-10-18, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF