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NSVMMBT2907AWT1G

Public Made by Adom

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onsemi Bipolar (BJT), SC-70-3. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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Contents

README

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NSVMMBT2907AWT1G

onsemi · Bipolar (BJT) · SC-70-3

NSVMMBT2907AWT1G from onsemi, in a SC-70-3. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 BASE input Base terminal of the PNP general-purpose transistor; the emitter-base breakdown voltage V(BR)EBO is −5.0 Vdc minimum and the emitter-base voltage rating VEBO is −5.0 Vdc.
2 EMITTER passive Emitter terminal of the PNP transistor; the device is rated for a maximum continuous collector current of −600 mAdc and a junction and storage temperature range of −55 to +150 °C.
3 COLLECTOR passive Collector terminal of the PNP transistor; rated for a collector-emitter voltage VCEO of −60 Vdc, collector-base voltage VCBO of −60 Vdc, and continuous collector current IC of −600 mAdc.

Key specifications

Parameter Value
Manufacturer onsemi
Package SC-70-3
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Collector−Emitter Breakdown Voltage V(BR)CEO -60 Vdc IC = −10 mAdc, IB = 0 2
Collector−Base Breakdown Voltage V(BR)CBO -60 Vdc IC = −10 Adc, IE = 0 2
Emitter−Base Breakdown Voltage V(BR)EBO -5 Vdc IE = −10 Adc, IC = 0 2
Base Cutoff Current IBL -50 nAdc VCE = −30 Vdc, VEB(off) = −0.5 Vdc 2
Collector Cutoff Current ICEX -50 nAdc VCE = −30 Vdc, VEB(off) = −0.5 Vdc 2
DC Current Gain HFE 75 IC = −0.1 mAdc, VCE = −10 Vdc 2
DC Current Gain HFE 100 IC = −1.0 mAdc, VCE = −10 Vdc 2
DC Current Gain HFE 50 IC = −500 mAdc, VCE = −10 Vdc 2
Collector−Emitter Saturation Voltage VCE(sat) -0.4 Vdc IC = −150 mAdc, IB = −15 mAdc 2
Collector−Emitter Saturation Voltage VCE(sat) -1.6 Vdc IC = −500 mAdc, IB = −50 mAdc 2
Base−Emitter Saturation Voltage VBE(sat) -1.3 Vdc IC = −150 mAdc, IB = −15 mAdc 2
Base−Emitter Saturation Voltage VBE(sat) -2.6 Vdc IC = −500 mAdc, IB = −50 mAdc 2
Current−Gain − Bandwidth Product fT 200 MHz IC = −50 mAdc, VCE = 20 Vdc, f = 100 MHz 2
Output Capacitance Cobo 8 pF VCB = −10 Vdc, IE = 0, f = 1.0 MHz 2
Input Capacitance Cibo 30 pF VEB = −2.0 Vdc, IC = 0, f = 1.0 MHz 2
Turn−On Time ton 45 ns VCC = −30 Vdc, IC = −150 mAdc, IB1 = −15 mAdc 2
Delay Time td 10 ns 2
Rise Time tr 40 ns 2
Storage Time ts 80 ns VCC = −6.0 Vdc, IC = −150 mAdc, IB1 = IB2 = 15 mAdc 2
Fall Time tf 30 ns 2
Turn−Off Time toff 100 ns 2
Collector−Emitter Voltage VCEO -60 Vdc 1
Collector−Base Voltage VCBO -60 Vdc 1
Emitter−Base Voltage VEBO -5 Vdc 1
Collector Current − Continuous IC -600 mAdc 1
Total Device Dissipation PD 150 mW TA = 25°C, FR−5 Board (Note 1) 1
Thermal Resistance Junction−to−Ambient RJA 833 °C/W 1
Junction and Storage Temperature TJ, Tstg -55 150 °C 1

CAD (KiCad official)

  • Symbol: NSVMMBT2907AWT1G
  • Footprint: Package_TO_SOT_SMD:SOT-323_SC-70
  • 3D model: SC-70-3 (KiCad packages3D, STEP)
  • 3D model files: nsvmmbt2907awt1g-etched.step / nsvmmbt2907awt1g-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); nsvmmbt2907awt1g.step / nsvmmbt2907awt1g.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: onsemi datasheet (6 pp, sha256 8db9cdd9822b3946, retrieved 2026-10-15, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF