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TK13P25D

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TOSHIBA AMERICA ELECTRONIC COMPONENTS Global Sourcing Parts, TO-252. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

componentglobal sourcing partstk13p25dfactory-2.0.0extractor-text

Verified TK13P25D

by Ray · last 30 Oct 2026 · 1 record · files match
SymbolFootprint3D modelPins

Verification log 1 record

30 Oct 2026RayPublished by the parts factory: tier mfr, 3 pinsfiles match
SymbolFootprint3D modelPinsfor all variants
  • ✓component-page-verify: PASS
  • ✓cad_props: Datasheet, MPN and distributor properties match page.json
  • ✓component: TK13P25D · TO-252 · 3 pins
  • ✓copper: 3 copper pads, none touching another net
  • ✓datasheet: all 3 pin names found in the 9-page datasheet
  • •distributor (warn): no ['digikey', 'mouser'] number
  • ✓family: TO-252-2
  • ✓files: 7 declared files present
  • ✓hero: docs/hero.png 4000x2500
  • ✓lbr: OK: /tmp/cpv-2b53901b/x.lbr is a valid EAGLE .lbr with complete deviceset
  • ✓license: CC-BY-SA-4.0
  • ✓models_3d: 2 records
  • •package_fit (skip): no component.package_dims on the page: the model is unchecked against the datasheet drawing
  • ✓pads: 3 pins = 3 pads
  • ✓pose: 2 STEP(s) Z-up, seated, centred
  • ✓symbol: 3 pins agree
  • ✓visibility: public, source open
Evidencedatasheet
Verified files✓ tk13p25d.kicad_sym✓ tk13p25d.kicad_mod✓ tk13p25d.step
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Contents

README

markdown

TK13P25D

TOSHIBA AMERICA ELECTRONIC COMPONENTS · Global Sourcing Parts · TO-252

TK13P25D from TOSHIBA AMERICA ELECTRONIC COMPONENTS, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate; gate-source voltage limited to ±20 V (VGSS) with threshold Vth of 1.5 to 3.5 V at VDS = 10 V, ID = 1 mA.
2 D passive Drain; drain-source voltage up to 250 V (VDSS) and DC drain current up to 13 A (pulsed 52 A).
3 S passive Source; connects to the source side of the MOSFET and body diode (reverse drain current IDR 13 A DC).

Key specifications

Parameter Value
Manufacturer TOSHIBA AMERICA ELECTRONIC COMPONENTS
Package TO-252
Category Global Sourcing Parts
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Gate leakage current IGSS -1 1 µA VGS = ±20 V, VDS = 0 V 3
Drain cut-off current IDSS 10 µA VDS = 250 V, VGS = 0 V 3
Drain-source breakdown voltage V(BR)DSS 250 V ID = 10 mA, VGS = 0 V 3
Gate threshold voltage Vth 1.5 3.5 V VDS = 10 V, ID = 1 mA 3
Drain-source on-resistance RDS(ON) 0.19 0.25 Ω VGS = 10 V, ID = 6.5 A 3
Diode forward voltage VDSF -1.7 V IDR = 13 A, VGS = 0 V 3
Drain-source voltage VDSS 250 V Ta = 25 1
Gate-source voltage VGSS -20 20 V Ta = 25 1
Drain current (DC) ID 13 A Tc = 25 1
Drain current (pulsed) IDP 52 A Note 1 1
Power dissipation PD 96 W Tc = 25 1
Single-pulse avalanche energy EAS 78 mJ Note 2: VDD = 50 V, Tch = 25 (initial), L = 0.77 mH, RG = 25 Ω, IAR = 13 A 1
Avalanche current IAR 13 A Note 1 1
Reverse drain current (DC) IDR 13 A 1
Reverse drain current (pulsed) IDRP 52 A Note 1 1
Channel temperature Tch 150 °C 1
Storage temperature Tstg -55 150 °C 1
Channel-to-case thermal resistance Rth(ch-c) 1.3 °C/W 2
Channel-to-ambient thermal resistance Rth(ch-a) 125 °C/W 2
Input capacitance Ciss 1100 pF VDS = 100 V, VGS = 0 V, f = 1 MHz 3
Reverse transfer capacitance Crss 8 pF VDS = 100 V, VGS = 0 V, f = 1 MHz 3
Output capacitance Coss 66 pF VDS = 100 V, VGS = 0 V, f = 1 MHz 3
Gate resistance rg 5 Ω VDS = OPEN, f = 1 MHz 3
Switching time (rise time) tr 40 ns See Figure 6.2.1. 3
Switching time (turn-on time) ton 55 ns See Figure 6.2.1. 3
Switching time (fall time) tf 20 ns See Figure 6.2.1. 3
Switching time (turn-off time) toff 130 ns See Figure 6.2.1. 3
Total gate charge Qg 25 nC VDD ≈ 200 V, VGS = 10 V, ID = 13 A 3
Gate-source charge 1 Qgs1 4.2 nC VDD ≈ 200 V, VGS = 10 V, ID = 13 A 3
Gate-drain charge Qgd 8.5 nC VDD ≈ 200 V, VGS = 10 V, ID = 13 A 3
Reverse recovery time trr 180 ns IDR = 13 A, VGS = 0 V, -dIDR/dt = 100 A/µs 3
Reverse recovery charge Qrr 1.1 µC IDR = 13 A, VGS = 0 V, -dIDR/dt = 100 A/µs 3
Peak reverse recovery current Irr 12 A IDR = 13 A, VGS = 0 V, -dIDR/dt = 100 A/µs 3

CAD (KiCad official)

  • Symbol: TK13P25D
  • Footprint: Package_TO_SOT_SMD:TO-252-2
  • 3D model: TO-252 (KiCad packages3D, STEP)
  • 3D model files: tk13p25d-etched.step / tk13p25d-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); tk13p25d.step / tk13p25d.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: TOSHIBA AMERICA ELECTRONIC COMPONENTS datasheet (9 pp, sha256 b458d0bbdf628640, retrieved 2026-10-30, tier: manufacturer)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF